• 제목/요약/키워드: Screen-printed Ag

검색결과 83건 처리시간 0.024초

에폭시수지가 도포된 폴리이미드와 스크린 프린팅 Ag 사이의 계면접착력 평가 (Interfacial Adhesion between Screen-Printed Ag and Epoxy Resin-Coated Polyimide)

  • 박성철;김재원;김기현;박세호;이영민;박영배
    • 마이크로전자및패키징학회지
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    • 제17권1호
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    • pp.41-46
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    • 2010
  • 스크린 프린팅된 Ag 박막과 에폭시 수지로 코팅된 폴리이미드 사이의 계면접착력을 $180^{\circ}$ 필 테스트를 통해 정량적으로 구하였다. 스크린 프린팅된 Ag 박막과 에폭시 수지 코팅된 폴리이미드 사이 필 강도는 $164.0{\pm}24.4J/m^2$이었다. 오븐에서 $120^{\circ}C$ 조건에서 24시간 동안 열처리 한 Ag/폴리이미드의 필 강도는 $220.8{\pm}19.2J/m^2$로 증가하였고, $85^{\circ}C/85%$ 상대습도 조건에서 120시간 동안 유지한 Ag/폴리이미드의 필 강도는 $84.1{\pm}50.8J/m^2$로 감소하였다. 전계방출형 주사전자현미경과 XPS를 통해 박리된 시편 표면을 분석한 결과, 열처리 및 고온/다습조건처리 시 스크린 프린팅 Ag 박막과 에폭시 수지 코팅층 사이의 계면접착력은 에폭시 수지와 수분 사이의 가수분해 결합 반응으로 인해 계면접착력 증가 및 감소하는 경향과 밀접한 연관성이 있는 것으로 판단된다.

Ag paste와 실리콘 웨이퍼의 반응성에 따른 태양전지의 전기적 성질 (Electrical Properties of Solar Cells With the Reactivity of Ag pastes and Si Wafer)

  • 김동선;황성진;김형순
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.54-54
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    • 2009
  • Ag thick film has been used for electrode materials with the excellent conductivity. Ag electrode is used in screen-printed silicon solar cells as a electrode material. Compared to photolithography and buried-contact technology, screen-printing technology has the merit of fabricating low-priced cells and enormous cells in a few hours. Ag paste consists of Ag powders, vehicles and additives such as frits, metal powders (Pb, Bi, Zn). Frits accelerate the sintering of Ag powders and induce the connection between Ag electrode and Si wafer. Thermophysical properties of frits and reactions among Ag, frits and Si influence on cell performance. In this study, Ag pastes were fabricated with adding different kinds of frits. After Ag pastes were printed on silicon wafer by screen-printing technology, the cells were fired using a belt furnace. The cell parameters were measured by light I-V to determine the short-circuit current, open-circuit voltage, FF and cell efficiency. In order to study the relationship between the reactivity of Ag, frit, Si and the electrical properties of cells, the reaction of frits and Si wafer on was studied with thermal properties of frits. The interface structure between Ag electrode and Si wafer were also measured for understanding the reactivity of Ag, frit and Si wafer. The excessive reactivity of Ag, frit and Si wafer certainly degraded the electrical properties of cells. These preliminary studies suggest that reactions among Ag, frits and Si wafer should optimally be controlled for cell performances.

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박막 적층 구조 및 필링 속도가 스크린 프린팅 Ag/Polyimide 사이의 필 강도에 미치는 영향 (Effects of Film Stack Structure and Peeling Rate on the Peel Strength of Screen-printed Ag/Polyimide)

  • 이현철;배병현;손기락;김가희;박영배
    • 마이크로전자및패키징학회지
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    • 제29권2호
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    • pp.59-64
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    • 2022
  • 연성인쇄회로기판에 사용되는 스크린 프린팅(screen-printing, SP) Ag/폴리이미드(polyimide, PI) 구조의 필 테스트 시 필링 속도 및 박막 적층 구조가 필 강도에 미치는 영향을 분석하기 위해, PI/SP-Ag, PI/SP-Ag/전해도금 Cu, 전해도금 Cu/SP-Ag/PI의 3가지 적층 구조에 대해 필링 속도에 따른 90° 필 테스트를 수행하였다. PI 박막을 필링하는 2가지 구조에서는 필링 속도에 상관없이 필 강도가 거의 일정하게 유지된 반면, Cu/Ag 금속 박막 필링 구조에서는 필링 속도가 증가할수록 필 강도가 크게 증가하는 경향을 보였다. 이는 필링 속도에 따른 90° 굽힘 소재의 소성변형에너지 차이에 기인한 것으로 판단된다. 인장속도에 따른 인장 시험 결과, 변형 속도 증가에 따른 Cu/Ag 금속 박막의 유동응력 및 인성 증가가 Cu/Ag/PI 구조에서의 필링 속도에 따른 금속 박막의 90° 굽힘 소성변형에너지 및 필 강도 증가의 주 원인으로 판단된다. 반면, 점탄성 소재인 PI의 경우 변형 속도에 따른 기계적물성 차이가 금속에 비해 상대적으로 작아서, PI/Ag 및 PI/Ag/Cu 구조에서는 필링 속도에 따른 PI의 90° 굽힘 소성변형에너지 및 필 강도 변화가 상대적으로 적은 것으로 판단된다.

Ag가 함유된 전도성 도료의 제조 조건에 따른 고주파 특성 (Microwave Properties of Ag Conducting Paste with Various Preparation Conditions)

  • 박상훈;김정표;성원모
    • 한국전기전자재료학회논문지
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    • 제18권9호
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    • pp.827-832
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    • 2005
  • Dual band internal antennas were fabricated with Ag conducting paste of various preparation conditions and different print thickness by silk screen print. We have investigated microwave properties were compared Ag conducting paste antenna with copperplate antenna at 800 MHz and 1,800 MHz. Gain of Ag conducting paste antenna was improved when preparation conditions were the single size Ag particle, using dry type resin and high Ag containing percent. However, it was lower than that of copperplate antenna within $0.1\~2.0dBi$ at 800MHz. In addition, it was improved at 800MHz when thickness of Ag conducting paste was printed more than skin depth but it was held after critical print thickness. On the other hand, it was reached level of copperplate antenna at 1,800MHz.

결정질 실리콘 태양전지에 적용될 Light-induced plating을 이용한 Ni/Cu 전극에 관한 연구 (The Research of Ni/Cu Contact Using Light-induced Plating for Cryatalline Silicom Solar Cells)

  • 김민정;이수홍
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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    • pp.350-355
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    • 2009
  • The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

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An Investigation on Gridline Edges in Screen-Printed Crystalline Silicon Solar Cells

  • Kim, Seongtak;Park, Sungeun;Kim, Young Do;Kim, Hyunho;Bae, Soohyun;Park, Hyomin;Lee, Hae-Seok;Kim, Donghwan
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.490.2-490.2
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    • 2014
  • Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

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저온 경화형 Ag 페이스트 및 이를 이용한 Ag 후막의 제조 및 특성 (Properties of Ag Thick Films Fabricated by Using Low Temperature Curable Ag Pastes)

  • 박준식;황준호;김진구;김용한;박효덕;강성군
    • 한국재료학회지
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    • 제13권1호
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    • pp.18-23
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    • 2003
  • Properties of Ag thick films fabricated by using low temperature curable silver pastes were investigated. Ag pastes were consisted of polymer resins and silver powders. Ag pastes were used for conductive or fixing materials between board and various electrical and electronic devices. Low temperature curable Ag pastes have some advantages over high temperature curable types. In cases of chip mounting, soldering properties were required for screen printed Ag thick films. In this study, four types of Ag pastes were fabricated with different compositions. Screen printed Ag thick films on alumina substrates were fabricated at various curing temperatures and times. Thickness, resistivity, adhesive strength and solderability of fabricated Ag thick films were characterized. Finally, Ag thick films produced using Ag pastes, sample A and B, cured at $150^{\circ}C$ for longer than 6 h and $180^{\circ}C$ for longer than 2 h, and $150^{\circ}C$ for longer than 1 h and $180^{\circ}C$ for 1 h, respectively, showed low resistivities of $10^{-4}$ $∼10^{-5}$ Ωcm and good adhesive strength of 1∼5 Mpa. Soldering properties of those Ag thick films with curing temperatures at solder of 62Sn/36Pb/3Ag were also investigated.

고효율, 저가화 태양전지에 적합한 Ni/Cu 금속 전극 간격에 따른 특성 평가 (Investigation of the Ni/Cu metal grid space for high-effiency, low cost crystlline silicon solar cells)

  • 김민정;이지훈;조경연;이수홍
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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    • pp.225-229
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    • 2009
  • The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

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Ni/Au 및 OSP로 Finish 처리한 PCB 위에 스크린 프린트 방법으로 형성한 Sn-37Pb, Sn-3.5Ag 및 Sn-3.8Ag-0.7Cu 솔더 범프 계면 반응에 관한 연구 (Studies on the Interfacial Reaction of Screen-Printed Sn-37Pb, Sn-3.5Ag and Sn-3.8Ag-0.7Cu Solder Bumps on Ni/Au and OSP finished PCB)

  • 나재웅;손호영;백경욱;김원회;허기록
    • 한국재료학회지
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    • 제12권9호
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    • pp.750-760
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    • 2002
  • In this study, three solders, Sn-37Pb, Sn-3.5Ag, and Sn-3.8Ag-0.7Cu were screen printed on both electroless Ni/Au and OSP metal finished micro-via PCBs (Printed Circuit Boards). The interfacial reaction between PCB metal pad finish materials and solder materials, and its effects on the solder bump joint mechanical reliability were investigated. The lead free solders formed a large amount of intermetallic compounds (IMC) than Sn-37Pb on both electroless Ni/Au and OSP (Organic Solderabilty Preservatives) finished PCBs during solder reflows because of the higher Sn content and higher reflow temperature. For OSP finish, scallop-like $Cu_{6}$ /$Sn_{5}$ and planar $Cu_3$Sn intermetallic compounds (IMC) were formed, and fracture occurred 100% within the solder regardless of reflow numbers and solder materials. Bump shear strength of lead free solders showed higher value than that of Sn-37Pb solder, because lead free solders are usually harder than eutectic Sn-37Pb solder. For Ni/Au finish, polygonal shaped $Ni_3$$Sn_4$ IMC and P-rich Ni layer were formed, and a brittle fracture at the Ni-Sn IMC layer or the interface between Ni-Sn intermetallic and P-rich Ni layer was observed after several reflows. Therefore, bump shear strength values of the Ni/Au finish are relatively lower than those of OSP finish. Especially, spalled IMCs at Sn-3.5Ag interface was observed after several reflow times. And, for the Sn-3.8Ag-0.7Cu solder case, the ternary Sn-Ni-Cu IMCs were observed. As a result, it was found that OSP finished PCB was a better choice for solders on PCB in terms of flip chip mechanical reliability.

스크린 프린팅법으로 제조된 $YBa_2Cu_3O_x-Ag$ 초전도 후막의 특성 (Characterization of Screen Printed $YBa_2Cu_3O_x-Ag$ Thick Films)

  • 김승구;김태윤;김대준;현상훈;정형진
    • 한국세라믹학회지
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    • 제31권12호
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    • pp.1483-1490
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    • 1994
  • YBa2Cu3Ox-Ag(YBCO-Ag) thick films were fabricated on the zirconia substrate by a screen printing method. The starting powder was a mixture of YBCO, prepared by a coprecipitation in oxalic acid, and Ag2O. The influence of heat treatment conditions on properties of thick films was investigated. It was observed that Jc of thick films was directly proportional to the orientation factor of thick films and the optimimum preparation condition was the heat treatment of thick films at 100$0^{\circ}C$ for 3 min in O2. The improvement of Jc by the addition of Ag was considered as a result of the suppression of microcracks in the films.

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