• 제목/요약/키워드: Scattering parameters

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Estimation of rice growth parameters by X-band radar backscattering data

  • Kim, Yi-Hyun;Hong, Suk-Young;Lee, Hoon-Yol
    • Proceedings of the KSRS Conference
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    • 2008.10a
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    • pp.324-327
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    • 2008
  • Microwave remote sensing has great potential, especially in monsoon Asia, since optical observations are often hampered by cloudy conditions. The radar backscattering characteristics of rice crop were investigated with a ground-based automatic scatterometer system. The system was installed inside a shelter in an experimental paddy field at the National Institute of Agricultural Science and Technology (NIAST) before transplanting. The rice cultivar was a kind of Japonica type, called Chuchung. The scatterometer system consists of X-band antennas, HP8720D vector network analyzer, RF cables, and a personal computer that controls frequency, polarization and data storage. This system automatically measures fully-polarimatric backscattering coefficients of rice crop every 10 minutes, accompanied by a digital camera that takes pictures in a fixed position with the same interval. The backscattering coefficients were calculated by applying a radar equation. Plant variables, such as leaf area index (LAI), biomass, plant height and weather conditions were measured periodically throughout the rice growth season. We have performed polarimetric decomposition of paddy data such as single, double and volume scattering to extract the scattering information effectively. We investigated the relationships between backscattering coefficients and the plant variables.

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S-Parameter Extraction of Unilateral Finline Using the Symmetrical Condensed TLM Node (대칭압축 TLM노드를 이용한 단방향 핀라인의 S-파라메터 추출)

  • Kim, Tae-Won
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.2
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    • pp.63-69
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    • 1999
  • The frequency-dependent characteristics of the finline have previously been analyzed using several frequency domain approaches. But the time domain TLM method presented in this paper is another independent approaches for obtaining frequency domain results for finline. The structure analysed with this algorithm is unilateral finline in WR-62 waveguide enclosures and the symmetrical condensed node based on the properties of Huygen's scattering model is used. From the TLM results, the frequency-dependent scattering parameters of a unilateral finline have been calculated by Fourier transform of the time domain data. The numerical results are in good agreements with other paper, thus demonstrating the validity and usefulness of the proposed method.

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Photosensor of properties for CdSe thin film grown by Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 CdSe 박막 성장과 광센서 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.1-4
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    • 2004
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.

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Measurements of Sound Speed and Density Contrasts of the Moon Jellyfish (Aurelia aurita s.l.) for Hydroacoustic Model (수중음향 모델을 위한 보름달물해파리(Aurelia aurita s.l.)의 체내 음속비 및 밀도비)

  • Kang, Don-Hyug;Lee, Chang-Won;Lee, Hyung-Been;Kim, Mi-Ra
    • Ocean and Polar Research
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    • v.34 no.1
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    • pp.85-91
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    • 2012
  • Physical properties such as sound speed contrast (h) and density contrast (g) of the interested target are key parameters to understand acoustic characteristics by using theoretical scattering models. The density and sound speed of moon jellyfish (common jellyfish, Aurelia aurita s.l.) were measured. Sound speed contrast (h) was measured from travel time difference (time-of-flight method) of an acoustic signal in a water tank for APOP studies (Acoustic Properties Of zooplankton). Density contrast (g) was measured by the displacement volume and wet weight (dual-density method). The sound speed remained almost constant as the moon jellyfish increased in bell length. The mean values${\pm}$standard deviation of h and g were $1.0005{\pm}0.0012$ and $0.9808{\pm}0.0195$), respectively. These results will provide important input for use in theoretical scattering models for estimating the acoustic target strength of jellyfish.

Deterministic Measures of Fault-Tolerance in Recursive Circulants and Hypercubes (재귀원형군과 하이퍼큐브의 고장 감내에 대한 결정적 척도)

  • Park, Jung-Heum;Kim, Hee-Chul
    • Journal of KIISE:Computer Systems and Theory
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    • v.29 no.9
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    • pp.493-502
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    • 2002
  • The connectivity and edge-connectivity have been the prime deterministic measure of fault tolerance in multicomputer networks. These parameters have a problem that they do not differentiate the different types of disconnected graphs which result from removing the disconnecting vertices or disconnecting edges. To compensate for this shortcoming, one can utilize generalized measures of connectedness such as superconnectivity, toughness, scattering number, vertex-integrity, binding number, and restricted connectivity. In this paper, we analyze such deterministic measures of fault tolerance in recursive circulants and hypercubes, and compare them in terms of fault tolerance.

SHOCK ACCELERATION MODEL WITH POSTSHOCK TURBULENCE FOR GIANT RADIO RELICS

  • Kang, Hyesung
    • Journal of The Korean Astronomical Society
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    • v.50 no.4
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    • pp.93-103
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    • 2017
  • We explore the shock acceleration model for giant radio relics, in which relativistic electrons are accelerated via diffusive shock acceleration (DSA) by merger-driven shocks in the outskirts of galaxy clusters. In addition to DSA, turbulent acceleration by compressive MHD modes downstream of the shock are included as well as energy losses of postshock electrons due to Coulomb scattering, synchrotron emission, and inverse Compton scattering off the cosmic background radiation. Considering that only a small fraction of merging clusters host radio relics, we favor a reacceleration scenario in which radio relics are generated preferentially by shocks encountering the regions containing low-energy (${\gamma}_e{\leq}300$) cosmic ray electrons (CRe). We perform time-dependent DSA simulations of spherically expanding shocks with physical parameters relevant for the Sausage radio relic, and calculate the radio synchrotron emission from the accelerated CRe. We find that significant level of postshock turbulent acceleration is required in order to reproduce broad profiles of the observed radio flux densities of the Sausage relic. Moreover, the spectral curvature in the observed integrated radio spectrum can be explained, if the putative shock should have swept up and exited out of the preshock region of fossil CRe about 10 Myr ago.

Magnetic Properties of Cr-doped LiNbO3 by Using the Projection Operator Technique

  • Park, Jung-Il;Lee, Hyeong-Rag;Lee, Haeng-Ki
    • Journal of Magnetics
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    • v.16 no.2
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    • pp.108-113
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    • 2011
  • The electron spin resonance lineshape (ESRLS) function for the electron spin resonance linewidth (ESRLW) of $Cr^{3+}$ (S = 3/2) in ferroelectric lithium niobate single crystals doped with 0.05 wt% of Cr, is obtained by using the projection operator technique (POT), developed by Argyres and Sigel. The ESRLS function is calculated to be axially symmetric about the c - axis and analyzed by using the spin Hamiltonian $H_{SP}={\mu}_B(B{\cdot}{^\leftrightarrow_{g}}{\cdot}S)+S{\cdot}{^\leftrightarrow_{D}}{\cdot}S$ with the parameters g = 1.972 and D = $0.395\;cm^{-1}$. In the ca plane, the linewidths show a strong angular dependence, whereas in the ab plane, they are independent of the angle. This result implies that the resonance center has an axial symmetry along the c - axis. Further, from the temperature dependence of the linewidths that is shown, it can be seen that the linewidths increase as the temperature increases, at a frequency of v = 9.27GHz. This result implies that the scattering effect increases with increasing temperature. Thus, the POT is considered to be more convenient to explain the scattering mechanism as in the case of other optical resonant systems.

Monte-Carlo Simulation for Exposure and Development of Focused Ion Beam Lithography (집속이온빔 리소그라피 (Focused Ion Beam Lithography)외 노출 및 현상에 대한 몬데칼로 전산 모사)

  • Lee, Hyun-Yong;Kim, Min-Su;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1246-1249
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    • 1994
  • Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

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Characteristics of InN thin fabricated by RF reactive sputtering (고주파 반응성 스퍼터링에 의해 제작된 InN 박막의 특성)

  • Kim, Young-Ho;Choi, Young-Bok;Chung, Sung-Hoon;Hong, Pil-Young;Moon, Dong-Chan;Kim, Sun-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.527-534
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    • 1998
  • Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$s, and 1.912eV, respectively.

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SAXS and AFM Study on Porous Silicon Prepared by Anodic Etching in HF-based Solution (SAXS와 AFM에 의한 HF-용액내 양극 에칭에 의해 제조된 기공성 실리콘의 구조연구)

  • Kim, Eu-gene;Kim, Hwa-Joong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.11
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    • pp.1218-1223
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    • 2004
  • Porous silicon materials have been shown to have bright prospects for applications in light emitting, solar cell, as well as light- and chemical-sensing devices. In this report, structures of porous silicon prepared by anodic etching in HF-based solution with various etching times were studied in detail by Atomic Force Microscopy and Small Angle X -ray Scattering technique using the high energy beam line at Pohang Light Source in Korea. The results showed the coexistence of the various pores with nanometer and submicrometer scales. For nanameter size pores, the mixed ones with two different shapes were identified: the larger ones in cylindrical shape and the smaller ones in spherical shape. Volume fractions of the cylindrical and the spherical pores were about equal and remained unchanged at all etching times investigated. On the whole uniform values of the specific surface area and of the size parameters of the pores were observed except for the larger specific surface area for the sample with the short etching time. The results implies that etching process causes the inner surfaces to become smoother while new pores are being generated. In all SAXS data at large Q vectors, Porod slope of -4 was observed, which supports the fact that the pores have smooth surfaces.