• 대한치과보철학회지
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• 제36권5호
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• pp.738-747
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• 1998

The purpose of this study was to compare the positional stability of removable dies using several dowel pin systems. The removable dies were made by using five dowel pin systems: single dowel pin(Group I), single dowel pin and prepared groove on the die base(Group II), two-single dowel pin(Group III), two separate parallel dowel pins with plastic sleeves(Group IV), double straight dowel pins with metal sleeve(Group V). Special aluminum mold was made for specimens, and the dies of specimens removed and replaced thirty times with universal testing machine. Horizontal and vertical shift of dies was measured by Olympus monocular scanning tunneling microscope(STM5). The results were as follows: 1. The vertical shift was larger than the horizontal shift in all the other groups except Group I. 2. Single dowel pin system(Group I) was the most unstable of five dowel pin systems. 3. Double dowel pin systems with steeve(group IV, V) were the most stable of five dowel pin systems. 4. This study indicates that excellent horizontal positional stability is attainable with use of additional groove on the die base or double dowel pin. and excellent vertical positional stability is attainable with use of sleeve.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.340-340
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• 2010

Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.150.2-150.2
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• 2013

We elucidate the mechanism of the self-assembled organic layer formation at the organic/metal interface of hexaaza-triphenylene-hexacarbonitrile (HATCN)/Au(111) by first-principles calculations and Lowtemperature scanning tunneling microscope (STM). In this work, we used HATCN to deposit organic material which is well known as an efficient OLED charge generation material. Low-temperature STM measurements revealed that self-assembled hexagonal porous structure is formed at terraces of Au(111). We also found that the hexagonal porous structure has chirality and forms only small (<1000 $nm^2$) phaseseparated chiral domains that can easily change their chiral phase in subsequence STM images at 80 K. To explain the mechanism of these observation, we calculated the molecular-molecular and molecule-surface interaction energies by using density functional theory method. We found that the change of their chiral phase resulted from the competition between the two energies. These results have not only verified our experimental observations, but also revealed the delicate balance between different interactions that caused the self-assembed structures at the surface.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.875-881
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• 2004

Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

• Bulletin of the Korean Chemical Society
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• 제25권12호
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• pp.1822-1828
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• 2004

Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

• Bulletin of the Korean Chemical Society
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• 제22권2호
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• pp.213-218
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• 2001

Presented are the STM images of self-assembled monolayer of 2-mercaptoethanol on Au(111). Striped structures of ($6{\times}3_{\frac{1}{2}}$), ($5{\times}3_{\frac{1}{2}}$), ($4{\times}3_{\frac{1}{2}}$) and compact-($5{\times}3_{\frac{1}{2}}$) were observed after annealing at $80^{\circ}C.$ Analysis of the ordered structures revealed that the basic fundamental units of the ordered structures were three crystallographically non-equivalent ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, and that the way of combination of the assemblies produced the four different structures. The($6{\times}3_{\frac{1}{2}}$) structure ( $\theta$ = 0.33) was composed of one ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$)$R30^{\circ}$ assembly, while the ($5{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.30) and ($4{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.38) structures were consisted of two ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, separated by 5a and 4a, respectively. Furthermore, the compact-(5X 3½) structure ( $\theta$ = 0.50) was obtained by overlapping three ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies. In spite of the diversity in the adsorption structures, all the adsorption sites of 2-mercaptoethanol were fundamentally identical. On the other hand, the unannealed primitive SAM of 2-mercaptoethanol was characterized by two observations: a short-range order keeping the adsorbed molecules at approximately $3_{\frac{1}{2}}$ a and the small domains of the striped structures supporting that the observed surface structures on the annealed surface were the extension of the primitive layer of 2-mercaptoethanol. Comparing these observations with the already published structures of ethanthiol, it was concluded that the interaction between the hydroxyl groups of 2-mercaptoethanol might play a significant role in the adsorption step of 2-mercaptoethanol on Au(111) to organize the adsorption structures different from those of ethanthiol.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.