• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.3
• /
• pp.67-74
• /
• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.12a
• /
• pp.331-331
• /
• 2003

• Proceedings of the Korean Magnestics Society Conference
• /
• 2004.06a
• /
• pp.134-135
• /
• 2004

• Journal of Advanced Marine Engineering and Technology
• /
• v.33 no.1
• /
• pp.131-137
• /
• 2009

In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.419-420
• /
• 2008

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.139.2-139.2
• /
• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.67-75
• /
• 1996

This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2007.11a
• /
• pp.38-38
• /
• 2007

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.17-21
• /
• 2017

Horizontal thin-film thermoelectric cooler has been simulated using a commercial software (ANSYS Workbench Thermal-electric). The thermoelectric cooler consists of thin-film n-type $Bi_2Te_3$, p-type $Sb_2Te_3$ thermoelectric elements, and Au electrode, respectively. The hot spot was placed under the center of device which represents Joule heating. Numerical analysis was conducted by geometric variable, and a maximum temperature difference of $13^{\circ}C$ was obtained. As from the simulation parameters, we presented an optimized design for high efficiency cooling.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.55-55
• /
• 2011

질소 등을 GST225 상변화재료에 첨가시켜 비저항을 증가시킴으로서 PCRAM의 동작 전류를 감소시킨 연구가 선행된 바 있다. 본 연구에서는 GST225와 달리 고속 동작 특성을 갖는 것으로 널리 알려진 Ge-doped SbTe (GeST) 상변화 재료에 Carbon을 첨가하여 박막 특성을 연구하여 동작 전류 감소의 가능성을 타진하였다. 실험을 위한 박막 제작을 위해 2 inch size의 GeST 및 C doped GeST (C-GeST) single target을 이용하여 RF magnetron co-sputtering 하였다. 박막은 carbon이 첨가되지 않은 GeST와 carbon 첨가량이 늘어나는 순서로 C-GeST 1, C-GeST 2, C-GeST 3로 구성된다. 이 때 제작한 박막의 composition analysis를 위해 XRF/RBS/AES가 사용되었고 제작된 박막의 기본적인 특성평가를 위해 resistivity(${\rho}$)와 crystallzation temp.(Cx), surface morphology(AFM), x-ray diffraction pattern(XRD)를 측정하였다. 실험결과 GeST, C-GeST 1, C-GeST 2, C-GeST 3 박막의 Cx는 각각 209, 225, 233, $245^{\circ}C$로 측정되어 carbon 첨가량이 증가됨에 따라 결정화 온도가 증가되는 것을 알 수 있었다. 또한 ${\rho}$도 마찬가지로 annealing 온도를 약 $320^{\circ}C$로 할 경우 ${\rho}$(as-dep)와 ${\rho}$(crystalline) 모두 0.03 / $2.61*10^{-6}$, 0.08 / $7.93*10^{-6}$, 0.09 / $11.99*10^{-6}$, 0.13 / $13.49*10^{-6}{\Omega}{\cdot}m$로 증가하였다. 증가된 ${\rho}$의 원인이 박막의 grain size의 감소라고 단언 할 수는 없으나 AFM 측정결과 grain이라고 추측되는 박막 feature들의 size가 점차 감소하는 것을 확인하였다.