• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.302-307
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• 2013

The Sb-doped $SnO_2$ nanowire network sensors were prepared by thermal evaporation of the mixtures between tin and antimony powders. Pure $SnO_2$ nanowire networks showed high sensor resistance in air ($99M{\Omega}$), similar gas responses to 4 diffferent gases (5 ppm $C_2H_5OH$, CO, $H_2$, and trimethylamine), and very sluggish recovery speed (90% recovery time > 800 s). In contrast, 2 wt% Sb-doped $SnO_2$ showed the selective detection toward $C_2H_5OH$ and trimethylamine, relatively low resistance ($176k{\Omega}$) for facile measurement, and ultrafast recovery speed (90% recovery times: 6 - 18 s). The change of gas sensing charactersitics by Sb doping was discussed in relation to gas sensing mechanism.

• Polymer(Korea)
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• v.39 no.2
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• pp.225-234
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• 2015

In this study, we proposed to synthesize thermally stable, soluble and conjugated Schiff base polymer (SbP). For this reason, a specific molecule namely 4,4'-thiodiphenol which has sulfur and oxygen bridge in its structure was used to synthesize bi-functional monomers. Bi-functional amino and carbonyl monomers namely 4,4'-[thio-bis(4,1-phenyleneoxy)] dianiline (DIA) and 4,4'-[thiobis(4,1-phenyleneoxy)]dibenzaldehyde (DIB) were prepared from the elimination reaction of 4,4'-thiodiphenol with 4-iodonitrobenzene and 4-iodobenzaldehyde, respectively. The structures of products were confirmed by elemental analysis, FTIR, $^1H$ NMR and $^{13}C$ NMR techniques. The molecular weight distribution parameters of SbP were determined by size exclusion chromatography (SEC). The synthesized SbP was characterized by solubility tests, TG-DTA and DSC. Also, conductivity values of SbP and SbP-iodine complex were determined from their solid conductivity measurements. The conductivity measurements of doped and undoped SbP were carried out by Keithley 2400 electrometer at room temperature and atmospheric pressure, which were calculated via four-point probe technique. When iodine was used as a doping agent, the conductivity of SbP was observed to be increased. Optical band gap ($E_g$) of SbP was also calculated by using UV-Vis spectroscopy. It should be stressed that SbP was a semiconductor which had a potential in electronic and optoelectronic applications, with fairly low band gap. SbP was found to be thermally stable up to $300^{\circ}C$. The char of SbP was observed 29.86% at $1000^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.549-553
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• 2014

$CoSb_3$-based skutterudite compounds are candidate materials for thermoelectric power generation in the mid-temperature range (600 - 900 K) because their thermoelectric properties can be enhanced by doping and filling. The joining property of thermoelectric module electrodes containing thermoelectric materials is of great importance because it can dominate the efficiency of the thermoelectric module. This study examined the properties of $CoSb_3$/Al/Ti/CuMo joined by the spark plasma sintering technique. Titanium thin foil was used to prevent the diffusion of copper into $CoSb_3$ and Aluminum thin foil was used to improve the adhesion between $CoSb_3$ and Ti. The insertion of an Aluminum interlayer between the Ti and $CoSb_3$ was effective for joining $CoSb_3$ to Ti by forming an intermediate layer at the Al-$CoSb_3$ boundary without any micro cracks. Specifically, the adhesion strength of the Ti/Al/$CoSb_3$ joining interface showed a remarkable improvement compared with our previous results, without deterioration of electrical property in the interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

• Journal of the Korean institute of surface engineering
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• v.30 no.6
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• pp.406-411
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• 1997

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5\times10^{-3}\Omega\textrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$\Omega$/$\square$ at thickess of 2000 $\AA$ could be obrained at optmal condimal conditions which were at $400^{\circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.276-279
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• 2008

In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.34-41
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• 2005

We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.269-269
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• 2010

$SnO_2$ 나노선은 n-type의 전기적 특성과 우수한 광 특성을 보이며, 전자소자, 광소자 뿐 아니라 다양한 종류의 가스 센서 등에 응용되고 있다. 그러나 $SnO_2$ 나노선은 공기중에서 전기적으로 불안정한 특성을 보이며, 도핑을 하지 않은 나노선 소자에서는 전자의 모빌러티가 높지 않다는 단점을 갖고 있다. 이를 개선하고자 본 연구에서는 화학기상증착법 (Chemical Vapor Deposition)으로 Sb을 도핑한 $SnO_2$ 나노선을 성장하여 전계방출효과 트랜지스터 (field effect transistor: FET)를 제작하여 전기적 특성과 UV 반응성의 변화를 측정하였다. Sb 도핑 양을 늘려감에 따라 전기적 특성이 반도체 특성에서 점점 금속 특성으로 변하는 것과 게이트 전압의 영향을 적게 받는 것을 확인하였다. 또한 도핑을 해준 $SnO_2$ 나노선의 경우 UV 반응과 회복 시간이 기존에 비하여 크게 감소하여 UV 센서에 더욱 적합해진 것을 확인하였다. 또한, 슬라이딩 트랜스퍼 공정을 이용하여 나노선을 원하는 기판에 정렬된 상태로 전이할 때 도핑한 나노선은 표면특성의 변화로 정렬도가 크게 감소하는 것을 확인하였고, 기판에 윤활제를 사용하여 정렬도를 높일 수 있었다.