• Korean Journal of Materials Research
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• v.16 no.6
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• pp.351-354
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• 2006

[ $Co_{1-x}Fe_xSb_3$ ] skutterudites were synthesized by encapsulated induction melting and their thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the subsequent heat treatment at 773 K for 24 hours in vacuum. However, ${\delta}-CoSb_3$ was decomposed to FeSb2 and Sb when $x{\leq}0.3$, which means that the solubility limit of Fe to Co is x<0.3. The positive signs of Seebeck coefficients for all Fe-doped specimens revealed that Fe atoms acted as p-type dopants by substituting Co atoms. Thermoelectric properties were remarkably enhanced by Fe doping and optimum composition was found to be $Co_{0.7}Fe_{0.3}Sb_3$ in this study.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.412-415
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• 2006

Te-doped $CoSb_3$ was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the subsequent annealing at 773 K for 24 hrs. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the $CoSb_{2.8}Te_{0.2}$ specimen.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.435-438
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• 2006

The hot pressing was employed to prepare Fe-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the hot pressing under 60MPa at 773 K for 2 hrs. Iron atoms acted as electron acceptors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping. $Co_{0.7}Fe_{0.3}Sb_3$ was found as an optimum composition for the best thermoelectric property in this work.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.1-7
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• 2011

Undoped and Sb-doped $SnO_2$ nanofibers were prepared by electrospinning and their responses to $H_2$, CO, $CH_4$, $C_3H_8$, and $C_2H_5OH$ were measured. In the undoped $SnO_2$ nanofibers, the gas response ($R_a/R_g$, $R_a$: resistance in air, $R_g$: resistance in gas) to 100 ppm $C_2H_5OH$ was very high(33.9), while that to the other gases ranged from 1.6 to 2.2. By doping with 2.65 wt% Sb, the response to 100 ppm $C_2H_5OH$ was decreased to 4.5, whereas the response to $H_2$ was increased to 3.0. This demonstrates the possibility of detecting a high $H_2$ concentration with minimum interference from $C_2H_5OH$ and the potential to control the gas selectivity by Sb doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.136-136
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• 2010

$Ge_2Sb_2Te_5$ (GST)는 광학 스토리지 및 PRAM(Phase-change Random Access Memory)에 적용 가능한 대표적인 상변화 물질이며 상변화 거동에 대한 다양한 연구가 진행되고 있다. 차세대 비휘발성 메모리로 각광을 받고 있는 PRAM의 경우 저전력 그러나 향후 고집적, 고성능 PRAM 소자구현을 위해서는 Reset 전류 감소를 통한 소비 전력 감소, 인접 셀간의 'cross talking'을 방지할 수 있는 열적 안정성 개선 등의 문제점들을 해결해야 한다. GST 물질의 전기적, 열적 특성을 조절하여 이러한 문제를 해결하기 위하여 GST 물질에 이종의 원소를 첨가하는 연구가 활발히 진행되고 있으며, 특히 질소 첨가에 의해 결정 성장 억제를 통한 결정화 온도 증가, 결정질의 저항 증가 등의 보고가 있었다. 본 연구에서는 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ (NGST) 박막의 상변화 거동을 규명하고 GST 박막과 비교하여 첨가된 질소의 영향을 분석하고자 한다. D.C Magnetron sputtering 방법으로 증착된 GST와 NGST 박막을 등온으로 유지하여 각 온도별로 열처리 시간 증가에 따른 비저항을 실시간으로 측정하여 GST와 NGST 박막의 상분율을 계산하고 Kissinger 모델을 이용하여 effective activation energy ($E_a$)를 구하였다. GST와 NGST 박막의 $E_a$는 각각 $2.08\;{\pm}\;0.11\;eV$와 $2.66\;{\pm}\;0.12\;eV$로 계산되었다. 따라서 첨가된 질소에 의해 NGST 박막의 결정화를 위하여 GST 박막의 경우보다 더 큰 활성화 에너지가 필요하다.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.135-140
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• 2011

By investigating photoluminescence (PL) spectra (20 K) of undoped and Be-doped p-type GaSb/GaAs epilayers, the origin has been analyzed by the change due to doping density. We have observed that the PL peak shifts to higher energy and the full-width half-maximum (FWHM) decreases with increasing the doping density below ${\sim}10^{17}cm^{-3}$, contrasted to shift to low energy and increasing FWHM above the density of ${\sim}10^{17}cm^{-3}$. From the variation of the integrated PL intensities of three peaks dissolved by Gaussian fit, it has been analyzed that, as the density increases, the $Be[Be_{Ga}]$ acceptor level (0.794 eV) reduces, whereas the intrinsic defect of $A[Ga_{Sb}]$ (0.778 eV) enhances together with a new $Be^*$ level (0.787 eV) locating between A and Be. We have discussed that it is due to coexistence of the Be acceptor level (${\Delta}E=16meV$) and the complex level (${\Delta}E=23meV$), $Be^*[Ga_{Sb}-Be_{Ga}]$combined by Be and A, in Be-doped p-GaSb, and that the level density of $Be[Be_{Ga}]$ may be reduced above ${\sim}10^{17}cm^{-3}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.329-333
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• 2012

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.169-175
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• 2002

Semiconductive nano $(Ba_{1-x}Sb_x)TiO_3$ powders were synthesized by the hydrothermal process and Sb was simultaneously doped in the hydrothermal condition. $(Ba_{1-x}Sb_x)TiO_3$ powders obtained from optimum condition(at 20$0^{\circ}C$ for 3hr) exhibited spherical shape, high purity and nano size. The PTCR characteristics was observed when 0.1 and 0.2 mole% Sb were added and sintered at over 130$0^{\circ}C$ for 1 hour, respectively. And The ceramics exhibit the PTCR characteristics with a resistively jump $ratio($\rho$_{max}/$\rho$_{min})$ of about $10^4$. Also we found that PTCR characteristics were dependent on the microstructure.