• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1135-1142
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• 2000

In this study, we fabricated a 1.55um polarization-insensitive semiconductor optical amplifier(SOA) with rectangular buried heterostructure using a InGaAsP/InP double heterostructure wafer. Measured characteristics of the fabricated SOA are that 3dR bandwidth is 35nm and 3dB saturation output power is 4dBm. Maximum gain under the 150mA CW driving condition is 19.4dB. We measured the ASE(amplified spontanouse emission) Power spectrum or n and TM mode in the fabricated SOA using ASE measurement system and knew that distributions of the TE and TM mode about the maxinum region are nearly coincident. this shows the fabricated SOA is a polarization-insensitive.

• Current Optics and Photonics
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• v.2 no.1
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• pp.27-33
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• 2018

We report the physical implementation of a tunable photonic microwave delay line filter based on injection locking of a single Fabry-Perot laser diode (FP-LD) to a reflective semiconductor optical amplifier (RSOA). The laser generates equally spaced multiple wavelengths and a single tapped-delay line can be obtained with a dispersive single mode fiber. The filter frequency response depends on the wavelength spacing and can be tuned by the temperature of the FP-LD varying lasing wavelength. For amplitude control of the wavelengths, we use gain saturation of the RSOA and the offset between the peak wavelengths of the FP-LD and the RSOA to decrease the amplitude difference in the wavelengths. From the temperature change of total $15^{\circ}C$, the filter, consisting of four flat wavelengths and two wavelengths with slightly lower amplitudes on both sides, has shown tunability of about 390 MHz.

• Journal of Communications and Networks
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• v.12 no.6
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• pp.544-557
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• 2010

This paper addresses the problem of controlling the envelope's power peak of single carrier modulated signals, band limited by root-raised cosine (RRC) pulse shaping filters, in order to reduce power amplifier back-off for very small aperture terminals ground stations. Magnitude modulation (MM) is presented as a very efficient solution to the peak-to-average power ratio problem. This paper gives a detailed description of the MM concept and its recent evolutions. It starts by extending the look-up-table (LUT) based approach of the MM concept to M-ary constellations with M ${\leq}$ 16. The constellation and RRC symmetries are explored, allowing considerable reduction on LUT computation complexity and storage requirements. An effective multistage polyphase (MPMM) approach for the MM concept is then proposed. As opposed to traditional LUT-MM solutions, MM coefficients are computed in real-time by a low complexity multirate filter system. The back-off from high-power amplifier saturation is almost eliminated (reduction is greater than 95%) with just a 2-stage MPMM system even for very demanding roll-off cases (e.g., ${\alpha}$ = 0,1). Also, the MPMM is independent of modulation in use, allowing its easy application to constellations with M > 16.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.12-16
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• 2003

This paper presents a compensation method for a temperature-dependent gain tilt in L-band erbium-doped fiber amplifier using a voltage-controlled attenuator. The gain tilts in the L-band of 1570-1605 nm due to a temperature change have negative slopes, whereas they have positive slopes for the increasing optical input powers in a saturation region. The proposed method utilizes these opposite gain variations to compensate for the gain tilt over a wide range of temperature. While applying forty channels with a channel spacing of 100 GHz in the L-band and changing the ambient temperature from 0 to $50^{\circ}C$, the compensation method maintained the gain deviation within 1 dB.

• Journal of Satellite, Information and Communications
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• v.3 no.2
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• pp.18-25
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• 2008

A major drawback of Orthogonal Frequency Division Multiplexing (OFDM) system is high peak-to-average power ratio (PAPR) of the transmitted signal which introduces inevitable non-linear distortion in the transmission due to the amplifier non-linear property. This causes both in-band distortion and out of band spectrum re-growth. A polynomial based pre-distortion is estimated using the non-linear and inverse non-linear polynomial achieved through the Least Square Error (LSE) method. A new technique of PAPR reduction called 'Phase Realignment' (PR) is proposed which has a optimal effect in improving the BER performance as well as considerable reduction in the PAPR. In this paper we used the PR method along with the 'Peak Clipping' (PC) method is used before the pre-distortion to remove the high peak present in the non constant amplitude of the OFDM signal responsible to drive the amplifier in near saturation region for better performance of the system.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• ETRI Journal
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• v.46 no.2
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• pp.227-237
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• 2024

This study proposes a novel, conditionally applied neural network technique to reduce the overall peak-to-average power ratio (PAPR) of an orthogonal frequency division multiplexing (OFDM) system while maintaining an acceptable bit error rate (BER) level. The main purpose of the proposed scheme is to adjust only those subcarriers whose peaks exceed a given threshold. In this respect, the developed C-ANN algorithm suppresses only the peaks of the targeted subcarriers by slightly shifting the locations of their corresponding frequency samples without affecting their phase orientations. In turn, this achieves a reasonable system performance by sustaining a tolerable BER. For practical reasons and to cover a wide range of application scenarios, the threshold for the subcarrier peaks was chosen to be proportional to the saturation level of the nonlinear power amplifier used to pass the generated OFDM blocks. Consequently, the optimal values of the factor controlling the peak threshold were obtained that satisfy both reasonable PAPR reduction and acceptable BER levels. Furthermore, the proposed system does not require a recovery process at the receiver, thus making the computational process less complex. The simulation results show that the proposed system model performed satisfactorily, attaining both low PAPR and BER for specific application settings using comparatively fewer computations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.23-30
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• 2000

To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5A
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• pp.484-491
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• 2004

C-band pumping effect appears in L-band EDFA because the absorption in C-band occurs dominant under the condition of such a low average population inversion. In this paper, we show how the C-band pumping effect depends on 980nm pump power, the C-band wavelength, and its input power. The C-band pumping is caused by absorbing C-band injection or backward spontaneous emission power through EDF. If the same small signal condition is given by a C-band pump, the C-band pump of a long wavelength is good for the saturation and noise characteristics of L-band signal. Finally, it is considered that in the aspect of saturation characteristics, C-band compensation is not so much efficient as L-band in Gain-Clamped L-band EDFA having a lossy resonator.