A compensation method for a temperature-dependent gain tilt in L-band EDFA using a voltage-controlled attenuator
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이원경
(한국전자통신연구원 네트워크연구소 광통신연구부)
정희상 (한국전자통신연구원 네트워크연구소 광통신연구부) 주무정 (한국전자통신연구원 네트워크연구소 광통신연구부) |
1 |
1580-nm band erbium-doped fiber amplifier employing novel temperature compensation technique
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2 |
A channel-number insensitive erbium-doped fiber amplifier with automatic gain and power regulation function
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3 |
Dynamic-gain-tilt-free long-wavelength band Erbium doped amplifiers utilizing temperature dependent characteristics of gain spectrum
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4 |
All-optical gain control of in-line erbiuim-doped fiber amplifiers for hybrid analog/digital WDM systems
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DOI ScienceOn |
5 |
Gain flatness comparison between erbium-doped fluoride and silica fiber amplifiers with wavelength-multiplexed signals
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DOI ScienceOn |
6 |
Gain-flattened EDFA with high AI concentration for multistage repeat-ered WDM transmission
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DOI ScienceOn |
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