• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.1-21.1
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• 2011

Vertically aligned single-crystal ZnO nanowires have been successfully grown on c-plane sapphire substrate using chemical vapor deposition (CVD) without catalyst. According to growth temperatures, it was changed ZnO growth characteristic. We investigated the effect of substrate temperatures on the growth ZnO films or nanowires on c-plane (0001) sapphire substrates. The ZnO films were acquired at $500^{\circ}C$, whereas the ZnO nanowires were obtained at $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$. The growth behavior diameter and growth rate of ZnO were changed due to different temperature. As a result of analyzing in-plane residual stress by X-ray diffraction, the optimized condition of ZnO nanowires were at $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.180-182
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• 1997

GaN crystals were deposited by tile direct reaction between ammonia and gallium at 105$0^{\circ}C$, 107$0^{\circ}C$ and 110$0^{\circ}C$ on (0001) plane sapphire substrate. The size of GaN crystals were increased with reaction temperature, but its were decreased with increasing the flow rates of NH$_3$. The size of GaN of 46${\mu}{\textrm}{m}$ were deposited ell sapphire substrate at the reaction temperature of 107$0^{\circ}C$ for growth time of 60 min.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.91-95
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• 2011

The light extraction efficiency in GaN based LED was analyzed qualitatively. The extraction efficiency was simulated with patterned shape, depth, size and spacing by using ray-tracing simulation. In simulation result, patterned shape and depth for the optimized extraction efficiency in PSS LED were in indented Hemi-sphere solid. Through the optimal patterning of the various factors, about 40% enhancement in extraction efficiency was obtained.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.341-342
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.92-92
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.125-125
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• 2008

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.5
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• pp.672-679
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• 2014

To improve sensing capability of infrared, heat-resistance and mechanical properties, the $SiO_2$ and $TiO_2$ anti-reflective layers were coated on sapphire substrate by MOCVD. The standard wavelength was 4,600nm, and the thickness of anti-reflective layers were 379 and 758nm in case of ${\lambda}/4$ and ${\lambda}/2$ of incident angle($65^{\circ}$), respectively. The $SiO_2$ and $TiO_2$ anti-reflective layers were coated 12.6 and 9.7nm/min of deposition rates by increasing oxygen pressure to set the ideal refractive index of 1.283. In case of $SiO_2({\lambda}/2)$ coating, the transmittance increased from 55.0 to 62.7%. The transmittance of $TiO_2({\lambda}/2)$ anti-reflective layer also increased from 55.0 to 64.8%. The flexural strength of $SiO_2({\lambda}/2)$ and $TiO_2({\lambda}/2)$ layer coated sapphire increased from 337.8 to 362.9 and 371.8MPa, respectively. The flexural strength at $500^{\circ}C$ of these materials also increased respectively to 304.5, 358.2MPa from 265.9MPa. From these results, we confirmed these materials can be used as transmission window of infrared light.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Tribology and Lubricants
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• v.32 no.2
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• pp.61-66
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• 2016

Total thickness variation (TTV), BOW, and surface roughness are essential characteristics for high quality sapphire substrates. Many researchers have attempted to increase removal rate by controlling the key process parameters like pressure and velocity owing to the high cost of consumables in sapphire chemical mechanical polishing (CMP). In case of the pressure approach, increased pressure owing to higher deviation of pressure over the wafer leads to significant degradation of the TTV. In this study, the authors focused on reducing TTV under the high-pressure conditions. When the production equipment polishes multiple wafers attached on a carrier, higher loads seem to be concentrated around the leading edge of the head; this occurs because of frictional force generated by the combination of table rotation and the height of the gimbal of the polishing head. We believe the skewed pressure distribution during polishing to be the main reason of within-wafer non-uniformity (WIWNU). The insertion of a hub ring between the polishing head and substrate carrier helped reduce the pressure deviation. Adjusting the location of the hub ring enables tuning of the pressure distribution. The results indicated that the position of the hub ring strongly affected the removal profile, which confirmed that the position of the hub ring changes the pressure distribution. Furthermore, we analyzed the deformation of the head via finite element method (FEM) to verify the pressure non-uniformity over the contact area Based on experiment and FEM results, we determined the optimal position of hub ring for achieving uniform polishing of the substrate.