• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1095-1100
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• 2021

In this study, ITZO thin films were deposited on glass, sapphire, and PEN substrates by RF magnetron sputtering, and their electrical and optical properties were investigated. The resistivity of the ITZO thin film deposited on the glass and sapphire substrates was 3.08×10-4 and 3.21×10-4 Ω-cm, respectively, showing no significant difference, whereas the resistivity of the ITZO thin film deposited on the PEN substrate was 7.36×10-4 Ω-cm, which was a rather large value. Regardless of the type of substrate, there was no significant difference in the average transmittance of the ITZO thin film. Figure of Merits of the ITZO thin film deposited on the glass substrate obtained using the average transmittance in the absorption region of the amorphous silicon thin film solar cell and the absorption region of the P3HT : PCBM organic active layer were 10.52 and 9.28×10-3 Ω-1, respectively, which showed the best values. Through XRD and AFM measurements, it was confirmed that all ITZO thin films exhibited an amorphous structure and had no defects such as pinholes or cracks, regardless of the substrate type.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.839-842
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• 2012

We report for the first time the synthesis of niobium dioxide nanowires on a sapphire substrate by chemical vapor transport method. We identified single crystalline nature of as-synthesized nanowires by scanning electron microscopy and transmission electron microscopy. Niobium dioxide nanowires with their large surface-to-volume ratio and high activities can be employed for electrochemical catalysts and immunosensors. The Raman spectrum of niobium dioxide nanowires also confirmed their identity.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.245-248
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• 2002

One dimensional conduction equation is solved by finite difference method, to analyse the stability of Au/YBCO film deposited on a sapphire substrate. Jolue heat is included in the case of current sharing state. The analysis shows the quench and recovery of superconductor depending on the amount of thermal disturbance release on the center surface of superconductor. The critical disturbance energies for different filling factor and operating current are calculated.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.118-118
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• 2005

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.16-19
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• 2003

Quench and recovery process of high-temperature-superconductor (HTS) film deposited on the sapphire substrate is studied numerically. The quench is developed by fault current and the superconductivity is recovered by convection of heat into coolant. After the fault current. the HTS film experiences the quench state. current sharing state. and finally recovers the superconductivity. Numerical results of this study are compared to the previous experimental results. and shows that this numerical work can explain the mechanism of quench/recovery characteristics of HTS film.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.55-55
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• 2008

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.272-275
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• 2003

Quench and recovery process of high-temperature-superconductor(HTS) film deposited on the sapphire substrate is studied numerically. The quench is developed by fault current and the superconductivity is recovered by convection of heat into coolant. After the fault current, the HTS film experiences the quench state, current sharing state, and finally recovers the superconductivity. Numerical results of this study are compared to the previous experimental results, and shows that this numerical work can explain the mechanism of quench/recovery characteristics of HTS film.

• Progress in Superconductivity and Cryogenics
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• v.4 no.2
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• pp.27-30
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• 2002

One dimensional conduction equation is solved by finite difference method, to analyse the stability of Au/YBCO film deposited on a sapphire substrate. Joule heat is included in the case of current sharing state. The analysis shows the quench and recovery of superconductor depending on the amount of thermal disturbance release on the center surface of superconductor. The critical disturbance energies for different filling factor and operating current are calculated.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.93-94
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• 2008

In order to suppress the current crowding in light emitting diodes (LEDs) grown on sapphire substrate, the effect of nonuniform contact resistivity between TME layer and p-GaN layer on the LED surface was theoretically investigated. The analysis results showed that current crowding occurring around p-electrode could be considerably improved, which in turn would be helpful to improve the electrostatic discharge (ESD) characteristic.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.110-110
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• 2002