Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2005.02a
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- Pages.118-118
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- 2005
Effects of total gas velocity on properties of undoped GaN epitaxial layer grown on sapphire (0001) substrate by MOCVD
- Chang, K. (Dept. of Chem. Eng.,University of Seoul) ;
- Kwon, M.S. (Dept. of Mat. Sci. and Eng., University of Seoul) ;
- Cho, S.I. (Dept. of Chem. Eng.,University of Seoul) ;
- Kang, T.W. (Quantum-Functional Semiconductor Research Center, Dongguk University) ;
- Ryu, S.R. (Quantum-Functional Semiconductor Research Center, Dongguk University)
- Published : 2005.02.15
Abstract
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