• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.1
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• pp.85-91
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.365-370
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• 2000

We have constructed a collinear four pass Ti.sapphire laser amplifier by usmg polmization effect When we pumped the mnplifier with 188 mJ second harmonics of Q-switched Nd:YAG laser, we observed that a 450 mW 1l1cident cw Ti:sapphire laser beam is amphfled to pulse with energy of 34 mJ and pulse width (FWffM) of 25 os. We could mmllmze the a.mplified spontaneous emission by simple method of rotating the Tbapphire amplifier rod er rod

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.907-911
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• 2002

Using the two-dimensional Wulff plot, the equilibrium shape of a sapphire crystal was investigated as a function of surface energy anisotropy. Depending on the relative values of surface energy for various facet planes, the projected shape of equilibrium sapphire was determined to be rectangle, parallelogram, hexagon or octagon. The results are compared with the experimentally observed shapes of internal cavities of submicron range in sapphire single crystals.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.5
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• pp.222-226
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• 2017

Recently sapphire wafer has expected as smart phone cover material, however, brittle nature of sapphire needed edge grinding processes to prevent early initiation of cracks. Electro-deposited multi-layered groove tools with $35{\mu}m$ diamond particles were studied for sapphire wafer grinding. Solid particle flow behaviors in agitated electrolyte was studied using PIV(Particle Image Velocimetry), and uniform particle distribution in Ni bond were obtained when agitating impeller was located lower part of electrolyte. Hardness values of $400{\pm}50Hv$ were maintained for retention of diamond particles in electro-deposited bond layer. Sapphire wafer edge grinding test was carried out and multi-layered $160{\mu}m$ thick diamond tool showed much greater grinding capabilities up to 2000 sapphire wafers than single-layered $50{\mu}m$ thick diamond electro-deposited tools of 420 wafers. The reason why 3 times thicker multi-layered tools than single-layered tools showed 5 times longer tool lives in grinding processes was attributed to self-dressed new diamond particles in multi-layered tools, and multi-layered diamond tools could be promising for sapphire grinding.

• Korean Journal of Optics and Photonics
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• v.6 no.1
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• pp.16-20
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• 1995

We have studied the spectral narrowing characteristics of the tunable Ti:sapphire laser pumped by the second harmonic generation of Nd:YAG laser. Ti:sapphire laser has uniform excitation distribution by both-side end pumping. We have controlled the angle of grating linearly and achieved the continuous selection of wavelength in the broad range from 705 to 835 nm. The output energy of $380{\mu}J$ at 790 nm. the spectral linewidth of $0.13cm_{-1}$ and the beam divergence of 1.2 mrad have been obtained. The wavelength range with power more than 50% of maximum output was 730-825 nm.825 nm.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.2
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• pp.46-52
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• 2005

The sapphire wafer was polished by the implementation of the surface machining technology based on nano-tribology, The removal process has been performed by grinding, lapping and chemical-mechanical polishing. For the chemical mechanical polishing process, the chemical reaction between the slurry and sapphire wafer was investigated in terms of the change of Zeta-potential between two materials. The Zeta-potential was -4.98 mV without the slurry in deionized water and was -37.05 mV for the slurry solution. By including the slurry into the deionized water the Zeta-potential -29.73 mV, indicating that the surface atoms of sapphire become more repulsive to be easy to separate. The average roughness of the polished surface of sapphire wafer was ranged to 1∼4$\AA$.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.886-891
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• 2018

Colloid silica using as abrasive for polishing sapphire has been extensively studied, which mechanism has also been deeply discussed. However, by the requirement of application enlargement and cost reduction, some new problems appear such as silica service life time, particle diameter mixing, etc. In this paper, several influences of colloid silica usage on sapphire CMP are examined. Results show particle diameter and concentration, pH value, service life time, particle diameter mixing heavily influence removal rate. Further analysis discloses there are two main effect aspects which are quantity of hydroxyl group, contact area for abrasive density stacking between abrasive and sapphire. Based on the discussions, a dynamic process of sapphire polishing is proposed.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.363-367
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• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.97.1-97.1
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• 2004

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.