• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.55-60
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• 2021

In order to produce wearable displays with high adhesion while maintaining flexible characteristics, the adhesive method using electro plating method was carried out. Laser lift-off (LLO) transcription was also used to remove sapphire substrates from LEDs bonded to fibers. Afterwards, the SEM and EDS data of the sample, which conducted the adhesion method using electro plating, confirmed that copper actually grows through the lattice of the fiber fabric to secure the light source and fiber. The adhesion characteristics of copper were checked using Universal testing machine (UTM). After plating adhesion, the characteristics of the LLO transcription process completed and the LED without the transcription process were compared using probe station. The electroluminescence (EL) according to the enhanced current was measured to check the characteristics of the light source after the process. As the current increases, the temperature rises and the bandgap decreases, so it was confirmed that the spectrum shifted. In addition, the change in the electrical characteristics of the samples according to the radius change is confirmed using probe station. The radius strain also had mechanical strength that copper could withstand bending stress, so the Vf variation was measured below 6%. Based on these results, it is expected that it will be applied to batteries, catalysts, and solar cells that require flexibility as well as wearable displays, contributing to the development of wearable devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• Korean Journal of Materials Research
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• v.33 no.12
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.5-10
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• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.

• Economic and Environmental Geology
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• v.47 no.6
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• pp.563-569
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• 2014

Ruby is one of the most favor colored gem, for beautiful red tone, be high in scarcity value. However, rubies with high quality are produced in restricted regions, such as in Thailand, Sri Lanka, Myanmar, and Tanzania etc., and they have been gradually exhausted by mining for a long period. Therefore, improving qualities of low level rubies with various treatments is arising an alternative way to obtain better rubies. Gemological and mineralogical properties of the natural ruby from Tanzanian were studied with heat treatments. Those characteristics were compared between only heat and adding flux materials under heating. Tanzanian raw rubies were applied a heat treatment ($1,600^{\circ}C$ for 6 hours). However, chromameter and UV-Vis analyses found that a simple heat treatment is inappropriated for the Tanzanian ruby. Although $Cr^{3+}$ containing for red color in the ruby increased with heat treatment, the ruby displays dark medium red because of Fe in the ruby as a form of $Fe_2O_3$. The low transparency after heat treatment is attributed to the recrystallization of $SiO_2$ which has a low melting point. Chromameter confirmed adding Pb-containing flux under heating greatly improves the clarity and color of Tanzanian rubies with micro-fractures and cavities on the surface. EMPA results show that Pb as an additive fills the cavities and cracks on raw Tanzanian rubies during the heat treatment. As a rewult of it, the quality of the Tanzanian ruby raw dramatically improved. These results indicate that the heat treatment with an additive (Pb in this study) is an effective way to obtain better quality of the Tanzanian ruby. Consequently, this study suggests a suitable method to improve the properties of the Tanzanina ruby. The result of this study would provide useful information to upgrade the qualities of similar gem stones such as corundum and sapphire.

• Archives of design research
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• v.12 no.2
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• pp.157-168
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• 1999

Stone in the Cho Sun Dynasty has been used as the material of industry arts, widely building materials and an important material for the artistic design. But it has been generally used as an use of practical living Product like, suban, a metal printing type, a fire place, a pillowcase, a pencil case, etc, and ornament with the quality of stone material and the aesthetic view. There are several problems as like size, quantity, delivery and processing method with the stne material according to its variety and selection. Accordingly it has been studied through the whole process of shape, a material selection of design and processing method as well as studying about small stone crafts which were manufactured in the Cho Sun Dynasty, considering these problems. Stone crafts in Cho Sun Dynasty has been widely used as a living tool. There was some what difference on manufacturing purpose on its technique of folk crafts of stone crafts, but, through the research of collected crafts, they were almost the same that social need, user's taste and hobby in those days were reflected in. In the result of analysis as dividing the stone crafts into daily living product, stationery and tool, the major of daily products have been manufactured with emphasis of practicability. And they have been manufactured from agalmatolite for the propose of use. further, kitchen product had no design due to the function and living products which has been used in the main living room has been carved with the decorative expression of the various form by using intaglic, relieve, inlaid technique, etc. For the stationery, it has been characterized with aesthetic point considering the decorative effects & selection of material in accordance with use. A material for manufacturing has been used in the range of agalmtolite, atopaz, a sapphire, white stone etc. As the result of this research, It was noticeable that there was the spleudidness on the expression of design and carving. It was also noticeable that black stone and guanite have been widely esed because it didn't need the delicacy as a tool.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1281-1287
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• 2018

In this study, $Al_xGa_{1-x}N$ films were grown on (0001) sapphire substrates by using metal-organic chemical vapor deposition (MOCVD). The crystallinity of the grown films was examined with X-ray diffraction (XRD) patterns. The surfaces and the chemical properties of the $Al_xGa_{1-x}N$ films were investigated using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The optical properties of the $Al_xGa_{1-x}N$ film were studied in a wide photon energy range between 2.0 ~ 8.7 eV by using spectroscopic ellipsometry (SE) at room temperature. The data obtained by using SE were analyzed to find the critical points of the pseudodielectric function spectra, $<{\varepsilon}(E)>=<{\varepsilon}_1(E)>+i<{\varepsilon}_2(E)>$. In addition, the second derivative spectra, $d^2<{\varepsilon}(E)>/dE^2$, of the pseudodielectric function for the $Al_xGa_{1-x}N$ films were numerically calculated to determine the critical points (CPs), such as the $E_0$, $E_1$, and $E_2$ structure. For the four samples (x = 0.18, 0.21, 0.25, 0.29) between a composition of x = 0.18 and x = 0.29, changes in the critical points (blue-shifts) with increasing Al composition at 300 K for the $Al_xGa_{1-x}N$ film were observed via ellipsometric measurements for the first time.