• 한국표면공학회지
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• 제53권3호
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• 한국광학회지
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• 제10권2호
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• pp.157-161
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• 1999

실험실에서 제작한 HCP와 IPS를 이용하여 Ti:Sapphire 레이저를 발진시키고 그 특성을 조사하였다. 레이저의 문지방 에너지 1.39kJ로 나타났다. 레이저 효율은 LD-490의 농도 10$\times$10-3Mol/l일 때 가장 높은 효율을 나타내었으며, LD-490의 농도가 낮으면 효율도 감소하는 것으로 나타났다. 레이저의 출력은 5.42 kJ의 입력 에너지에 대해 287mJ이었다. Ar의 방출대와 일치하는 BBQ(bis[2-butyloctyl)oxy]quatephenyl)를 LD-490과 1:1로 혼합하여 에너지 전환제로 사용한 결과 측정한 전구간에 걸쳐 출력 에너지가 증가하였고 문지방 에너지가 LD-490만을 사용할 때 보다 0.22 kJ이 낮아진 1.17 kJ이었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.656-661
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• 2002

라이다 광원용 다중통과 Ti-sapphire 증폭기를 각도다중 방식으로 설계하여 출력에너지 및 스펙트럼 특성을 개선하였다. 2-단의 다중통과 증폭기에서 파장이 790nm 일 때, 42mJ의 출력에너지와 21dB의 증폭이득 및 26%의 출력효율을 얻었으며, 715~930nm이 파장가변 영역에서 스펙트럼 선폭은 0.05$cm^{-1}$ / 이하였다. 780nm의 파장에서 35%의 SHG 변환효율과 390nm의 파장에서 13%의 THG 변환효율을 각각 얻었다. 결과적으로 240~306nm의 자외영역과 360~460nm의 deep-blue 영역에서 연속적으로 파장을 가변시킬 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Tribology and Lubricants
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• 제37권6호
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.234-237
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• 2007

We fabricated nano-structures of the anodic aluminum oxides on sapphire substrates. Two processes of nano-structured sapphire surface have present: the one is the template mask and the other is the anodic oxidized aluminum deposited on sapphire substrate. The formation of nano-structures has investigated by FE-SEM measurement. The etched surface by the template showed periodic lattice but the deposited surface showed the randomly distributed phase of nanoholes instead of the periodic lattice.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.341-344
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• 2006

LED chips are produced by cutting the sapphire on which GaN is evaporated. To cut the sapphire wafer into each LED chip, at first the wafer is scribed by diamond tool. To get the sharp groove shape for the nice cutting plane it is important the diamond tool shape, load, etc when the wafer is scribed. Here we tried to simulate the scribing process and get the scribing condition to reduce the wear rate of diamond tool for the sharp groove shape.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.355-356
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• 2008

The light extraction efficiencies of GaN-based light-emitting diodes (LEDs) grown on differently patterned sapphire substrates were investigated by using the ray tracing method. It was found that angle of the pattern surface against the sapphire surface, the number of pattern per unit area were important structural factors for high extraction efficiency.

• 한국세라믹학회지
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• 제14권1호
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• pp.19-24
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• 1977

상온에서 단결정 Sapphire가 충격에 의해서 파괴될 때에 수반되는 미세 조직변화에 대하여 관찰하였다. 파괴된 시편을 광학현미경으로 조사한 결과 cleavage는 주로 rhombohedral plane에서 일어나고 있음을 알았다. 그러나 관찰시료 파면의 양상을 박막(replica)으로 만들어 투과형 전자현미경으로 관찰한 결과로는 국부적으로 소성변화가 일어나고 있음을 알 수 있었다. 이러한 국부적인 소성변화는 crack의 진행을 저해하거나 또는 진로를 변경 시켜주므로 보다 높은 fracture energy를 유발시키는 원인이 됨을 알 수 있다.

• 한국광학회지
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• 제7권3호
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• pp.244-249
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• 1996

DIAL의 레이저광원으로 사용하는 다중통과 Ti:sapphire의 증폭시스템을 각-다중방식으로 개발하고 출력에너지와 스펙트럼 특성을 조사하였다. 개발된 2단의 다중통과 증폭기의 특성은 790nm파장에서 최대 출력에너지는 22mJ, 증폭이득은 20dB, 펌핑에너지에 대한 출력효율은 18%이다. 또한 스펙트럼선폭은 파장가변 범위 705-845nm에서 0.15$cm^{-1}$ /(9.3pm)이다. 최대 출력에너지 때 레이저빔 발산각은 X, Y축에서 각각 1.1, 1.5mrad이며 레이저빔의 quality factir N$^{2}$은 2.6이다.