• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.282-287
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• 1995

We have studied the characteristics of a cw Ti:sapphire laser pumped by an Ar-ion laser. Ti:sapphire is one of the most attractive materials for the generation of ultra-short pulses because of its very broad gain bandwidth. We used a 4.1 mm thick, 0.15 wt. % $Ti^{3+}$ -doped, Brewster-angled Ti:sapphire crystal and made a folded cavity to create a strong focusing mode. The folding angle of the cavity was adjusted to $15.4^{\circ}$ to compensate for the astigmatism from the Brewster-angled Ti:sapphire crystal. 5 WAr-ion laser was used as a pumping source. We observed that the Ti:sapphire cw output power was sensitively changed with respect to the condition of the folded cavity. The threshold pumping power was 2 Wand the slope efficiency was 16% when an output coupler of 10% transmission was used. The maximum output power was more than 450 mW at 5 W pumping. mping.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.66-73
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• 2007

The various output characteristics of a pulsed Ti:sapphire laser oscillator with a plane-parallel resonator, pumped longitudinally by the second harmonic wave of a Nd:YAG laser, and the output of a Ti:sapphire laser amplifier operated along the single path of the oscillator beam were investigated and analyzed. In the case of the oscillator, we measured the spectrum, the pulse buildup time, the temporal duration time of the pulse, and the output energy according to the variation of the pumping energy, resonator length, and the reflectance of the output coupler. And, in the case of the amplifier, we investigated and analyzed the output energy of the amplifier as a function of the time difference between the two pump beams of the oscillator and the amplifier, the pumping energy of the oscillator, and the pumping energy of the amplifier When pump energies of both the oscillator and the amplifier were 18 mJ/pulse, we could find that the output energy of the amplifier increased linearly and gradually up to the time difference of 35 ns. Finally, we determined that the slope efficiencies of the oscillator and the amplifier were 23.5 % and 11.6 %, respectively.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1285-1289
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• 2012

This study has been focused on application of ELID lapping process for mirror-surface machining of sapphire wafer. Sapphire wafer is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. High effective surface machining technology is necessary to use sapphire as various usages. The interval ELID lapping process has been set up for lapping of the sapphire material. According to the ELID lapping experimental results, it shows that 12.5 kg of load for lapping is most pertinent to ELID lapping. the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60 nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5 um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Tribology and Lubricants
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• v.32 no.2
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• pp.67-71
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• 2016

This study investigates the characteristics of the sapphire wafer chemical mechanical polishing (CMP) process. The material removal rate is one of the most important factors since it has a significant impact on the production efficiency of a sapphire wafer. Some of the factors affecting the material removal rate include the pressure, platen speed and slurry. Among the factors affecting the CMP process, we analyzed the trends in the material removal rate and surface roughness, which are mechanical factors corresponding to both the pressure and platen speed, were analyzed. We also analyzed the increase in the material removal rate, which is proportional to the pressure and platen speed, using the Preston equation. In the experiment, after polishing a 4-inch sapphire wafer with increasing pressure and platen speed, we confirmed the material removal rate via thickness measurements. Further, surface roughness measurements of the sapphire wafer were performed using atomic force microscopy (AFM) equipment. Using the measurement results, we analyzed the trends in the surface roughness with the increase in material removal rate. In addition, the experimental results, confirmed that the material removal rate increases in proportion to the pressure and platen speed. However, the results showed no association between the material removal rate and surface roughness. The surface roughness after the CMP process showed a largely consistent trend. This study demonstrates the possibility to improve the production efficiency of sapphire wafer while maintaining stable quality via mechanical factors associated with the CMP process.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.91-96
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• 2007

The light extraction efficiency in GaN-on-sapphire LEDs based on a simple model was analyzed qualitatively. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on flat LED and PSS(patterned sapphire substrate) LED. The role of the patterned sapphire substrate in PSS LED are analyzed and discussed. And, the effects of reflectance on flat LED and PSS LED were investigated. This analysis of simulation results provide a numeric figure for the extraction efficiency of LEDs and are helpful in the design of high brightness GaN LEDs.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.275-286
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• 2005

The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.228-229
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• 1999