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http://dx.doi.org/10.3807/KJOP.2005.16.3.275

Photon Extraction Efficiency in InGaN Light-emitting Diodes Depending on Chip Structures and Chip-mount Schemes  

Lee, Song-Jae (Electronics Engineering Department, Chungnam National University)
Publication Information
Korean Journal of Optics and Photonics / v.16, no.3, 2005 , pp. 275-286 More about this Journal
Abstract
The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.
Keywords
Light-emitting diode (LED); Light-emission efficiency; Photon extraction efficiency; Monte carlo analysis;
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