• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.71-73
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• 1995

In this work, we synthsized GaN powders by the direct reactions of Ga with NH$_3$at the temperature range of 950∼1150$^{\circ}C$ and we growth the GaN thin films on Si and sapphire substrates using the synthesized GaN powders by the vapor phase epitaxy method. The synthesized powder had hexagonal crystal structures with lattice constants of a$\sub$0/=3.1895${\AA}$, c$\sub$0/=5.18394${\AA}$. The reaction rates of GaN were increased with both reaction time and temperature, however it did not depends on the flow rates of NH$_3$. The island type GaN crystals were grown on (0001) sapphire substrates and fast lateral growth of GaN on (111) Si substrate than sapphire was observed in our experiments.

• Journal of the Optical Society of Korea
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• 제18권6호
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• pp.772-776
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• 2014

We report a numerical analysis of the light-extraction efficiency (LEE) of light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs). We considered various n-sided, regular convex pyramids, where n is an integer and $n{\geq}3$. We then considered four cross sections: extruded, subtracted, truncated-extruded, and truncated-subtracted. Ray-tracing simulations were carried out with these polygonal pyramid patterns, and the dimensions of the patterns were systematically varied. Optimized pattern shapes were determined for large LEE. An extruded circular pyramid with a slant angle of $45^{\circ}$ was found to be the optimal patterned shape.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.240-241
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• 2000

Sapphire fiber has been used to provide an optical path for the total radiation pyrometry. In measuring the temperature, we use the two-color detector, which consists of a high-performance Silicon detector mounted in a "sandwich" configuration over a Germanium detector. Sapphire fiber can withstand high temperature in the molten steel for two and a half hours. The maximum value of the error is the $\pm$2.5$^{\circ}C$ in the range of 152$0^{\circ}C$~1$600^{\circ}C$. This paper presents the simple scheme for measuring the molten steel temperature in the blast furnace of the iron ＆ steel making process.g process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• 열처리공학회지
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• 제22권6호
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• pp.354-360
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• 2009

This paper reports the oxidation mechanism of epitaxial Ni thin films grown on GaN/sapphire(0001) substrates, investigated by real-time x-ray diffraction and scanning electron microscopy. At the initial stage of oxidation process, a thin NiO layer with a thickness of ${\sim}50\;{\AA}$ was formed on top of the Ni films. The growth of such NiO layer was saturated and then served as a passive oxide layer for the further oxidation process. For the second oxidation stage, host Ni atoms diffused out to the surfaces of initially formed NiO layer through the defects running vertically to form NiO grains, while the sites that were occupied by host Ni, became voids. The crystallographic properties of resultant NiO films, such as grain size and mosaic distribution, rely highly on the oxidation temperatures.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.242-243
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• 2001

고출력 펨토초 레이저 기술은 커렌즈 모드록킹 기술, Ti：sapphire 이득매질의 개발, chirped pulse amplification (CPA) 등의 도움으로 1980년대 후반부터 급속히 발전해 왔다. 생성된 펨토초 펄스의 시간적 특성을 정확히 알아내기 위한 방법들도 많이 연구되어 주파수 분해 괌게이팅(FROG)이나 주파수위상 간섭계(SPIDER) 등의 방법들이 기존의 자체상관계를 대체하게 되었다. 극초단 레이저 펄스는 넓은 스펙트럼을 갖고 첨두출력이 높기 때문에 매질이나 광학계를 지나면서 군지연분산, 자체위상변조 등의 효과에 의한 시간적 위상변화가 쉽게 생긴다. (중략)

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.575-576
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• 2006

It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on three different types of LEDs, which a have a different pattered sapphire substrate. And, the role of the patterned sapphire substrate are analyzed and discussed. Based on the analysis, the improvements of extraction efficiency in the LED structures were discussed and these analyses are helpful in the design of high brightness GaN LEDs.

• 한국세라믹학회지
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• 제25권2호
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• pp.95-100
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• 1988

Single crystals of sapphire were grown from solution by slow cooling method using B2O3 and PbO as flux agents. The morphology of grown crystals was tube, rhombohedral, or hexagonal-plate. It was found that the morphology and the size of grown crystal were highly dependent on the amount of fluxes in the solution, the ratio of B2O3 vs. PbO, and cooling rate.

• 조명전기설비학회논문지
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• 제28권11호
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• pp.33-41
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• 2014

This paper is research result for a development of sapphire silicon ingot glowing(SSIG) PWM converter system for 80kW 10kA. The system include 3-phase AC-DC diode rectifier of input voltage AC 380V and 60Hz, DC-AC single phase full bridge PWM inverter of high frequency, AC-DC single-phase full wave rectifier using center-tapped of transformer for low voltage 8.0V and large current 10,000A of output specification, tungsten resistor load 0.1[$m{\Omega}$]. PWM switching frequency for IGBT inverter control set 30kHz. The suggested researching contents are designed data sheets of power converter system, PSIM simulation, operating characteristics and analysis results of developed SSIG system. This paper propose

• Journal of the Optical Society of Korea
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• 제11권3호
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• pp.124-129
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• 2007

For the first time we compare two kinds of optical frequency combs, one of which is based on a Ti:sapphire femtosecond laser and the other is based on a mode-locked erbium-doped fiber laser. The comparison is performed by measuring an optical frequency standard with these two combs simultaneously. The two frequency measurements agree within 1.8 Hz ($3.8{\times}10^{-15}$) with the uncertainty of 17.2 Hz ($3.6{\times}10^{-14}$), from which it can be concluded that the Ti:sapphire-based frequency comb and the fiber-based frequency comb have no systematic discrepancy at this level of uncertainty.