• 한국광학회지
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• 제6권4호
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• pp.282-287
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• 1995

발진 파장 영역이 매우 광범위한 티타늄 사파이어를 사용하여 접힌 공진기 형태의 레이저를 제작하고 연속 발진 특성을 조사하였다. 티타늄 사파이어 결정은 $Ti^{3+}$ 도핑율이 0.15wt.%이고 두께가 4.1mm이며 양면이 Brewster 각으로 되어 있는 것을 사용하였다. Brewster 면에서는 비점수차가 발생하므로 이를 보정하기 위하여 공진기의 접힌 각도를 $15.4^{\circ}$로 조정하였다. 펌핑 광원으로는 Ar-ion 레이저를 사용하였고, 반사율 90%의 출력경을 사용하여 2W 펌핑에서 레이저 발진이 시작되었으며, 5W 펌핑에서 450mW 이상의 츨력을 얻을 수 있었다. 또한 공진기의 두 오목거울 간의 거리에 따라 출력 변화를 조사하였다.

• 한국재료학회지
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• 제14권2호
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• 한국광학회지
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• 제18권1호
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• pp.66-73
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• 2007

레이저 분광용 고출력 파장가변 레이저로 이용할 Nd:YAG 레이저의 제 2조화파로 종여기한 평행평면형 공진기 구조의 펄스형 Ti:sapphire 레이저 발진기와 이를 이용한 단일경로 형태의 Ti:sapphire 레이저 증폭기의 출력특성을 조사하였다. 발진기의 경우에는 여기광의 에너지, 공진기 길이, 출력거울의 반사율을 변화시키면서 출력스펙트럼, 펄스 발생시간, 펄스폭, 출력에너지를 측정하였다. 그리고 증폭기의 경우, 발진기의 레이저 광과 증폭기 여기광이 증폭매질에 들어오는 시간차이, 그리고 발진기의 여기에너지와 증폭기의 여기에너지를 각각 변화시키면서 증폭기의 출력에너지를 측정하고 이를 분석하였다. 이 결과 발진기와 증폭기의 여기에너지가 18 mJ/pulse일 때 두 여기광의 시간차가 35 ns까지는 지속적으로 증폭기의 에너지가 증가했으며, 발진기의 여기광에 대한 증폭기의 기울기 효율은 23.5 %이고, 증폭기의 여기광에 대한 증폭기의 기울기 효율은 11.6 %였다.

• 한국정밀공학회지
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• 제29권12호
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• pp.1285-1289
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• 2012

This study has been focused on application of ELID lapping process for mirror-surface machining of sapphire wafer. Sapphire wafer is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. High effective surface machining technology is necessary to use sapphire as various usages. The interval ELID lapping process has been set up for lapping of the sapphire material. According to the ELID lapping experimental results, it shows that 12.5 kg of load for lapping is most pertinent to ELID lapping. the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60 nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5 um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Tribology and Lubricants
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• 제32권2호
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• pp.67-71
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• 2016

This study investigates the characteristics of the sapphire wafer chemical mechanical polishing (CMP) process. The material removal rate is one of the most important factors since it has a significant impact on the production efficiency of a sapphire wafer. Some of the factors affecting the material removal rate include the pressure, platen speed and slurry. Among the factors affecting the CMP process, we analyzed the trends in the material removal rate and surface roughness, which are mechanical factors corresponding to both the pressure and platen speed, were analyzed. We also analyzed the increase in the material removal rate, which is proportional to the pressure and platen speed, using the Preston equation. In the experiment, after polishing a 4-inch sapphire wafer with increasing pressure and platen speed, we confirmed the material removal rate via thickness measurements. Further, surface roughness measurements of the sapphire wafer were performed using atomic force microscopy (AFM) equipment. Using the measurement results, we analyzed the trends in the surface roughness with the increase in material removal rate. In addition, the experimental results, confirmed that the material removal rate increases in proportion to the pressure and platen speed. However, the results showed no association between the material removal rate and surface roughness. The surface roughness after the CMP process showed a largely consistent trend. This study demonstrates the possibility to improve the production efficiency of sapphire wafer while maintaining stable quality via mechanical factors associated with the CMP process.

• Tribology and Lubricants
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• 제35권6호
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• 대한전자공학회논문지SD
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• 제44권4호
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• pp.91-96
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• 2007

사파이어 기반의 GaN LED의 광추출 효율을 시뮬레이션을 이용하여 정량적으로 평가하였다. 각각의 LED는 ray-tracing 시뮬레이션을 이용하여 광추출 효율을 계산하였다. 본 연구에는 PSS(patterned sapphire substrate) LED와 flat LED의 비교 분석을 통하여, LED에서의 사파이어 기판의 패턴이 광추출에 미치는 영향을 설명하였다. 또한, 각각의 칩에서 반사막의 반사도가 광추출에 미치는 영향을 분석하고, 그 원인을 시뮬레이션을 이용하여 설명하였다. 한편, 사파이어 패턴에 의한 광추출효율의 변화 효과를 공기(air)와 실리콘(silicone) 분위기에서 시뮬레이션을 수행하였다. 이러한 시뮬레이션 기술을 통해 광추출 효율의 개선 정도를 정량적으로 평가할 수 있었으며, 이러한 연구가 향후 고효율 LED 개발에 도움을 줄 것으로 판단된다.

• 한국광학회지
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• 제16권3호
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• pp.275-286
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• 2005

InGaN LED에서 칩 구조 및 칩마운트 구조에 따른 광추출효율의 변화를 Monte Calo 기법을 이용하여 해석하였다. Simulation을 통해 얻은 중요한 결론의 하나는, InGaAlP 또는 InGaN/SiC LED의 경우에서는 달리, InGaN/sapphire LED의 경우 칩의 측 벽면 기울임 기법의 광추출효율 개선효과가 상대적으로 미미하다는 점이다. InGaN/SiC LED의 경우와는 달리, 기판으로 사용되는 sapphire의 굴절률이 상대적으로 작아서 생성된 광자들이 기판으로 넘어가는데 전반사장벽을 만나게 되어, 많은 광자들이 기판으로 넘어가지 못하고 두께가 매우 얇은 반도체 결정층에 갇히는 현상 때문이다. 동일한 현상은 epi-down 구조의 칩 마운트에서 광추출효율이 크게 개선되지 못하는 원인으로도 작용하게 된다. 광추출효율 관점에서의 epi-down 구조의 InGaN/sapphire LED가 갖고 있는 잠재력을 살리기 위한 방법의 하나는 기판-에피택시 계면을 texturing 하는 것이라고 할 수 있는데, 이 경우 생성된 광자들이 다량기판으로 넘어갈 수 있게 되어 광추출효율이 현저하게 개선된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.

• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.228-229
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• 1999