• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• 대한환경공학회지
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• 제30권2호
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• pp.207-212
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• 2008

본 연구에서는 seed 물질을 첨가함으로써 struvite 결정핵의 생성 및 성장단계를 단축시키고자 하였다. 본 연구에서는 seed 물질의 성상(모래, 안트라사이트, struvite)별, 입자의 크기(44$\sim$63 $\mu$m, 63$\sim$88 $\mu$m, 88$\sim$114 $\mu$m)별, 교반조건($G{\cdot}t_d$)에 따라 결정핵의 생성속도론에 미치는 영향을 관찰하였다. 모래와 안트라사이트는 seeding 하지 않은 경우에 비하여 암모니아성 질소제거효율이 각각 9%, 11%로 향상되었으며, struvite로 seed한 경우는 암모니아성 질소제거효율은 20% 이상 향상되었다. Seeding에 따른 struvite 결정화 효율은 seed 입자의 비표면적과 밀접한 상관관계가 있다. Seed 물질입자의 비표면적이 클수록 struvite 핵생성 및 성장을 향상시켰다. 또한 struvite 결정화 반응시 동질의 seed 물질(struvite seeds)을 사용하여 2차 핵생성을 유도하면 struivte 결정의 핵생성 및 성장을 위한 $G{\cdot}t_d$값을 단축시킬 수 있는 것으로 나타났다. 본 연구에서 고려한 입자크기에 대해서는 seed 입자크기에 대한 영향은 확인되지 않았다. Struvite 결정핵 생성속도론에서 $G{\cdot}t_d$값은 매우 중요한 인자로써 작용하였다.

• Korean Chemical Engineering Research
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• 제49권5호
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• pp.611-616
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• 2011

본 연구에서는 무배향 PLA 필름의 어닐링(annealing) 단계를 통하여 온도별 PLA 필름의 avrami 결정화 속도식을 도출하고 결정화 속도상수(k)를 비교함으로써 최적화된 어닐링 온도를 제안하였다. 120, 130, $140^{\circ}C$ 온도에서 결정화된 필름의 결정화 속도상수(k)는 각각 1.64, 1.68, 1.26이었다. 필름표면에 대한 어닐링은 필름의 표면조도와 동마찰계수에 영향을 주는데 80, 110, 120, 130, $140^{\circ}C$의 온도조건에서 표면조도(Ra)는 각각 0.006, 0.009, 0.015, 0.027, 0.029 ${\mu}m$로 높아졌고 동마찰계수(${\mu}_k$)는 0.45, 0.43, 0.33, 0.31, 0.27로 낮아졌다. 탈크를 1, 3, 5 wt%씩 첨가하는 경우 PLA 필름의 결정화 속도상수(k)는 0.58, 0.46, 0.39로 낮아졌다.

• 공업화학
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• 제22권2호
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• pp.138-143
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• 2011

열처리 온도에 따른 탄소섬유의 전자파 차폐특성을 알아보고자 전기방사법을 이용하여 나노섬유를 제조하고 1073, 1323, 1873, 2573 K의 온도 조건에서 열처리 공정을 실시하여 서로 다른 탄소 결정화도를 갖는 PAN계 탄소섬유를 제조하였다. 장방출 주사전자현미경을 통하여 제조된 섬유의 표면 형상을 조사하였고 열처리 온도에 따른 탄소섬유의 결정화도를 Raman 분석을 통하여 확인하였다. 또한 결정화도에 따른 전기전도성을 알아보고자 4-탐침법을 이용하여 표면저항을 측정하고 전기전도성을 계산하였으며, 회로망 분석기를 이용하여 800~4500 MHz의 주파수 영역에서 S-parameter를 측정하고 유전율 및 투자율, 그리고 전자파 차폐 특성을 조사하였다. 2573 K에서 제조된 탄소섬유의 경우 Raman 분석을 통하여 Ig/Id 값이 2.66으로 1323 K에서 제조된 탄소섬유의 1.08에 비해 2.4배 증가하여 결정화도가 향상됨을 확인하였고 전기전도성 또한 54.7 S/cm로 약 6배의 향상을 확인하였다. 유전율 실수부에서는 평균 20의 수치를 보여 1323 K에서 제조된 탄소섬유와 비교하여 약 4배의 향상을 보였다. 결과적으로 열처리 온도에 따른 탄소의 결정화도 향상에 의해 전자파 차폐 성능이 평균 41.7 dB로 약 10 dB이 향상되었음을 확인하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.35-58
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• 2000

The demand for sub-micrometer or nanometer functional ceramic powders with a better suspension behavior in aqueous media in increasing. Redispersible barium titanate (BT) nanocrystals, green light emitting Mn2+ doped Zn$_2$SiO$_4$ and ZnS nanoparticle phosphors were synthesized by a hydrothermal method or chemical precipitation with surface modification. The nanoparticle redispersibility for BT was achieved by using a polymeric surfactant. X-ray diffraction(XRD) results indicated that the BT particles are of cubic phase with 80 nm in size. XRD results of zinc silicate phosphor indicate that seeds play an important role in enhancing the nucleation and crystallization of Zn$_2$SiO$_4$ crystals in a hydrothermal condition. This paper describes and discuss the methods of surface modification, and the resulting related properties for BT, zinc silicate and zinc sulfide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• 한국세라믹학회지
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• 제28권1호
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• pp.29-36
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• 1991

Microporous glasses in the system TiO2-SiO2-Al2O3-B2O3-CaO-Na2O were prepared by the phase-separation technique. Morphology and distribution of pore and specific surface area of glasses heated and leached out at various conditions were investigated by SEM and Porosimeter. Crystallization of glasses heated above transition temperature was also inspected by X-ray diffraction method. When the heating temperature and time increased, the pore size and volume increased, but the specific surface area decreased above the critical temperature. The phase-separation, specific surface area and pore size showed more sensitive change on the variation of heating temperature than of heating time. The specific surface area and micropore volume of porous glasses prepared in this study were about 120-330$m^2$/g and 0.001-0.01cc/g, respectively. Mean pore size of porous glasses were about 20-90$\AA$. Anatase phases was deposited when the parent glass was heat-treated at 75$0^{\circ}C$ for 6hrs.

• 한국표면공학회지
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• 제37권6호
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• pp.326-334
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• 2004

Deposit charateristics of Electroless nickel(EN) were investigated with various complexing agents. As expected, the deposition rate of nickel is increased with pH and that of Phosphorous is decreased with pH. The result of SEM investigation shows that the rough surface crystallization is appeared with pH. It is show that the surface resistance of EN deposit is decreased with pH at 85$^{\circ}C$.

• 열처리공학회지
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• 제24권1호
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• pp.31-36
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• 2011

$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.

• 한국표면공학회지
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• 제40권3호
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.