• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.61-66
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• 2021

In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al₂O₃-SiO₂(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF₄/O₂/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al₂O₃ and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO₂.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.27 no.3
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• pp.159-167
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• 2021

The need for biodegradable plastic continues to increase, improvement of physical properties is necessary for actual use in the market. In this study, composite film was produced by adding peroxide additives to bioplastic according to concentration to investigate changes in the melt index, elongation, morphology, and TGA of the composite film. The addition of peroxide compatibilizer showed superior elongation of film and TGA compared to those of control. The added amount of compatibilizer affected the extrusion process, and it was revealed that adding an appropriate amount of peroxidizer is important. Analysis of the composite film's morphology revealed a heterogeneous dispersion sequence due to different rates of crystallization depending on the resin, and surface physical properties were best in the group added with 4% peroxide. The results above showed that the test group added with 4% peroxide compatibilizer was superior in the production of composite biodegradable film.

• Applied Chemistry for Engineering
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• v.34 no.2
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• pp.199-205
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• 2023

Arsenic is a highly toxic element, and its contamination is widespread around the world. The natural materials with high selectivity and efficiency toward pollutants are important in wastewater treatment technology. In this study, the mesoporous synthetic hectorite was synthesized by facile hydrothermal crystallization of gels comprising silica, magnesium hydroxide, and lithium fluoride. Additionally, the naturally available clay was modified using zirconium at room temperature. Both synthetic and modified natural clays were employed in the removal of arsenate from aquatic environments. The materials were fully characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), and Fourier transform-infrared (FT-IR) analyses. The synthesized materials were used to remove arsenic (V) under varied physicochemical conditions. Both materials, i.e., Zr-bentonite and Zr-hectorite, showed high percentage removal of arsenic (V) at lower pH, and the efficiency decreased in an alkaline medium. The equilibrium-state sorption data agrees well with the Langmuir and Freundlich adsorption isotherms, and the maximum sorption capacity is found to be 4.608 and 2.207 mg/g for Zr-bentonite and Zr-hectorite, respectively. The kinetic data fits well with the pseudo-second order kinetic model. Furthermore, the effect of the background electrolytes study indicated that arsenic (V) is specifically sorbed at the surface of these two nanocomposites. This study demonstrated that zirconium intercalated synthetic hectorite as well as zirconium modified natural clays are effective and efficient materials for the selective removal of arsenic (V) from aqueous medium.

• Journal of the Mineralogical Society of Korea
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• v.17 no.1
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• pp.11-21
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• 2004

Crystallization of CaC $O_3$ from the solutions of various degrees of supersaturation was carried out by a spontaneous precipitation method. The solution was kept at $25^{\circ}C$ and pH 6.9∼8.8. The solution compositions were varied in two ways: (1) The total carbonate, [C $O_3$]$_{Τ}$, to total calcium. [Ca]$_{Τ}$, ratios vary as ; [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ >1. [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$=1, and [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$<1. (2) The total calcium concentration, [Ca]$_{Τ}$, held at 0.02 mo1/d $m^3$, 0.2 mo1/d $m^3$, and 0.4 mo1/d $m^3$. We found that the CaC $O_3$ phase crystallized from the solutions of [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ $\geq$ 1 was mostly calcite with less than 1% of vaterite, while the CaC $O_3$ crystals precipitated from low carbonate concentration toward calcium concentration, [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ < 1, were dominated by vaterite crystals. It appears that the polymorph of CaC $O_3$ precipitate was mainly controlled not by the calcium concentration but by the carbonate concentration during the spontaneous precipitation. Also, we found that the surface roughness of vaterite increased with decreasing carbonate concentration from 0.8 or 0.5 of [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ ratios and the surface area of vaterite increased from 5.64∼7.34 $\mu\textrm{m}$ to 8.39∼10.3 $\mu\textrm{m}$.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Applied Chemistry for Engineering
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• v.4 no.4
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• pp.721-730
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• 1993

Various catalysts of $Cu_xH_3-{_{2x}}PMo_{12}O_{40}{\cdot}_nH_2O$ with different x-values have been prepared and characterized by thermal analysis, X-ray powder diffraction, infrared spectroscopy, BET surface-area measurement, electron microscopy, and temperature programmed desorption of ammonia. The properties of these catalysts in acrolein oxidation have been investigated in a continuous-flow fixed-bed reactor. The catalysts lost their water of crystallization at about $200^{\circ}C$ and their constitutional water between 300 and $400^{\circ}C$. The Keggin structure of the catalysts was identified by infrared spectroscopy. The decomposition of Keggin anion, $(PMo_{12}O_{40})^{3-}$, was increased with the increase of substituted copper content and identifiable $MoO_3$ and $P_2O_5$ as decomposition products were observed. The conversion of acrolein decreased with the increase of x probably due to the decrease of specific surface area and of total amount of acid sites. But specific reaction rate and selectivity to acrylic acid were maximized at x=1.0, and it showed specific acid site distributions.

• Archives of Plastic Surgery
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• v.36 no.3
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• pp.247-253
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• 2009

Purpose: Hydroxyapatite(HA) has been widely used due to its chemical similarity to bone and good biocompatibility. HA is composed of macropores and micropores. Too much irregularities of the micropores are ineffective against the adhesion and proliferation of osteoblast. Many efforts have been tried to overcome these drawbacks. HA crystal coating on the irregular surface of HA scaffold, crystallized HA, is one of the method to improve cell adhesion. Meanwhile, the collagen has been incorporated with HA to create composite scaffold that chemically resembles the natural extracellular matrix components of bone. The authors proposed to examine the effect of collagen - coated crystallized HA on the adhesion and proliferation of osteoblast. Method: HA powder containing $10{\mu}m$ pore size was manufactured as 1 cm pellet size. For the making crystallized HA, 0.1 M EDTA solution was used to dissolve HA powder and heated $100^{\circ}C$ for 48 hours. Next, the crystallized HA pellets were coated with collagen (0.1, 0.5, and 1%). The osteoblasts were seeded into HA pellets and incubated for the various times (1, 5, and 9 days). After the indicating days, methylthiazol tetrazolium (MTT) assay was performed for cell proliferation and alkaline phosphatase (ALP) activty was measured for bone formation. Result: In SEM study, the surface of crystallized HA pellet was more regular than HA pellet. MTT assay showed that the proliferation of osteoblasts increased in a collagen dose - dependent and time - dependent manner and had a maximum effect at 1% collagen concentration. ALP activity also increased in a collagen dose - dependent manner and had a highest effect at 1% collagen concentration. Conclusion: These data showed that crystallization and collagen coating of HA was effective for osteoblast proliferation and ALP activity. Therefore, our results suggest that crystallized - HA scaffold with collagen coating is may be a good strategy for tissue engineering application for bone formation.

• Journal of the Korean Applied Science and Technology
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• v.24 no.2
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• pp.174-181
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• 2007

In this study, $SiO_2/poly(ethylene-co-vinyl$ alcohol)(EVOH) hybrid coating materials with gas barrier property could be produced using sol-gel method. The biaxially oriented polypropylene (BOPP) substrate with surface pretreatment was coated with the prepared hybrid sols containing various inorganic silicate component by a spin coating method. Crystallization behavior of the hybrids was investigated in terms of analysis of X-ray diffraction and cooling thermogram from DSC experiment. From the morphological observation of the $SiO_2/EVOH$ hybrid gel, it was confirmed that there existed an optimum content of inorganic silicate precursor, Tetraethylorthosilicate (TEOS), to produce hybrid materials with dense microstructure, exhibiting uniformly dispersed silica particles with average size below 100 nm. When TEOS was added at below or above the optimum content, particle clusters with large domain were observed, resulting in phase separation. This morphological result was found to be in good agreement with that of oxygen permeability of the hybrid coated films. In the case of film coated with hybrid prepared from addition of 0.01 - 0.02mol of TEOS, a remarkable improvement in barrier property could be obtained, however, with the addition of TEOS more than 0.04 mol, the barrier property was dramatically reduced because of phase separation and micro-crack formation on the film surface.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.1-6
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• 2007

In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.