• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.440-441
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• 2006

Several titanate powders ($Al_2TiO_5,\;SrTiO_3$, etc.) were synthesized by an ethylene glycol solution route. Titanium isopropoxide and nitrate salts were dissolved in stoichiometric proportions in liquid-type ethylene glycol without any precipitation. The parent precursor sols were dried to porous gels, and then the gels were calcined and crystallized. All synthesized titanate powders had stable crystallization behavior at low temperature and high specific surface area after a simple ball-milling process. A three-component PZT $(Pb(Zr_{0.52}{\cdot}Ti_{0.48})O_3)$ powder was also synthesized successfully by the ethylene glycol method. In this study, the characteristics of the multi-component titanate powders by the ethylene glycol method are examined.

• Bulletin of the Korean Chemical Society
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• v.18 no.12
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• pp.1249-1256
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• 1997

Single phase La1-xSrxCoO3 (x≤0.2) was synthesized as a uniform sized 100 nm particulates with relatively high surface area of 20-30 m2/g, at low temperature (≥600 ℃), from a polymeric gel precursors prepared by using poly(vinyl alcohol) as homogenizer. No minor phase developed during the crystallization when polymer/metal mole ratio was higher than 3. As the polymer/metal mole ratio was raised in the gel, the amount of carbonaceous residues in the amorphous solid precursor prepared by heating the gel at 300 ℃ increased. Most of the residues were eliminated by exothermic thermal decomposition around 400 ℃. The amount of residual carbon (less than 1%) left in the crystalline La1-xSrxCoO3 decreased as more polymer was used, eliminating detrimental effect which might be posed by using large amount of organic homogenizer. The crystal structure of La1-xSrxCoO3 synthesized at temperature lower than 800 ℃ was observed to be shifted from rhombohedral to more symmetric cubic. The structure shifted back to rhombohedral as the cubic sample was annealed at 1000 ℃.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.79-84
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• 2024

Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.8-14
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• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• Transactions of the Korean hydrogen and new energy society
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• v.8 no.4
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• pp.181-185
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• 1997

The electrochemical properties of the $AB_2$-type (Zr-Ti-V-Ni-Cr-Co-Mn) metal hydride electrodes prepared by ball milling with $AB_5-type\{(LM)Ni_{3.6}Al_{0.4}Co_{0.7}Mn_{0.3}\}$(LM : Lanthanum-rich mischmetal) alloy powder as a surface activator were investigated. By ball milling with $AB_5$ type alloy powder, the activation of $AB_2$ type metal hydride electrode was accelerated resulting in an increase of discharge capacity from 35% to 85% of the maximum capacity at the first cycle. As the amount of surface activator increased the activation rate increased, whereas the discharge capacity increased with 10wt% and decreased with 20wt% addition of the surface activator. When the amount of the surface activator was kept constant as 10wt%, the discharge capacity and the activation rate increased with ball milling time up to 20 hours. However beyond 20 hours of ball milling time, they decreased drastically due to the nano-crystallization or amorphorzation of the alloy powder.

• Progress in Superconductivity
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• v.5 no.1
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• pp.75-79
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• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.494-498
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• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.79-83
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• 2001

In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.641-649
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• 2002

The redox properties of a homogeneously-precipitated $TiO_2$ rutile powder with a BET surface area of ~$200 m^2$/g, consisting of an acicular primary particle, were characterized using photocatalytic reaction in aqueous 4-chlorophenol, Cu-EDTA and Pb-EDTA solutions under ultraviolet irradiation, compared to those of commercial P-25 X$200 m_2$ powder with a spherical primary particle as well as home-made anatase $TiO_2$ powder with ~$200 m^2$/g BET surface area. Here, the anatase powder also includes mainly the primary particles very similar to the acicular shapes of the rutile $TiO_2$ powder. The rutile powder showed the fastest decomposition rate and the largest amount in the photoredor, compared with the anatase or P-25 powder, while the anatase powder unexpectedly showed the slowest rate and the smallest amount in the same experiments regardless of almost the same surface area. From results, the excellent photoredox abilities of this rutile powder appears to be due to specific powder preparation method, like a homogeneous precipitation leading to direct crystallization from the solution, regardless of their crystalline structures even when having the similar particle shape and surface area.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.636-639
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• 2010

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.