• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.974-978
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• 1998

The kinetics of crystal growth and nucleation in dependence on the supersaturation of an aqueous solution of 3-nitro-1,2,4-triazol-5-one(NTO) were evaluated on the draft tube-baffle(DTB) crystallizer operated batchwise. The crystal growth rate is proportional to the supersaturation to the 2.9 power, and the nucleation rate to the 4.2 power. The uncleation behavior for NTO-water system in DTB crystallizer was grasped according to Mersmann's criteria. The nucleation in this crystallizer was found to act with heterogeneous nucleation and surface uncleation simultaneously. Simplified relation was derived for calculation of mean crystal size of product crystals from the batch cooling crystallizer. The obtained relation was verified by a set of experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.25-30
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• 2000

Ion mass doping method has been implemented for the fabrication of large area electronic devices such as TFT-LCD. In this work, the effect of ion mass doping on the velocity and the behavior of MILC was investigated. When amorphous silicon was either doped or bombarded by accelerated ions, MILC velocity was reduced by over 50% and the front edge of MILC became coarse. In order to analyze the dependence of silicon film's properties on ion mass doping, ultraviolet reflectance and sulfate roughness were investigated. Both the velocity and the behavior of MILC were found to be related with the increase of surface roughness by ion bombardment.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.224-228
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• 1998

Phase transition kinetics of nonstoichiometric amorphous titanium oxide thin films deposited by reactive sputtering was investigated after cooling down with various rate followed by l0min.-3hrs. annealing at $500^{\circ}C$~$600^{\circ}C$ After short duration and fast cooling. Magneli was the only crystalline phase because the oxidation rates of $TiO_{2-x}$, could be relatively slower than that of crystallization. When the films were cooled slowly between $500^{\circ}C$~$300{\circ}C$, Magneli was transformed into an anatase and stabilized, but directly into a rutile under fast cooling. Because the rutile also prevailed after cooling from $600^{\circ}C$, it was concluded that the rutile phase could be formed directly from Magneli as well as converted from the anatase. Changes in volume and surface morphology were observed related to crystallization and oxidation processduring heat treatment.

• Polymer(Korea)
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• v.38 no.3
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• pp.307-313
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• 2014

The physical properties of functionalized graphene sheet (FGS)/poly(ethylene-co-vinyl acetate) (EVA) was examined with various kinds of EVA, having vinyl acetate (VA) contents in the range of 0 to 40 wt%. The compatibility between FGS and EVA was enhanced as the polar VA content of EVA increased. Thus, the dispersion of FGS in EVA became finer, and the decrease of surface resistivity and the increase of tensile modulus by the added FGS became more effective when the VA content of EVA was high. When the VA content was low, the elongation at break was reduced drastically by added FGS due to the poor adhesion of FGS/EVA interface. The crystallization of EVA was generally retarded by the interaction with dispersed FGS. However, when both the VA content of EVA and the added amount of FGS were low, the crystallization of EVA was enhanced, probably due to the predominant nucleating effect by FGS.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Polymer(Korea)
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• v.32 no.5
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• pp.478-482
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• 2008

The effect of 1,3-dioxolane on the structural development in the optical polycarbonate film was studied. The 1,3-dioxolane was used as an environmental friendly solvent for manufacturing solution-cast polycarbonate film instead of methylene chloride. The evaporation rate in film drying process decreased due to the high boiling temperature of 1,3-dioxolane. This caused the crystallization in the polycarbonate film. As a result, The increase of crystallinity and roughness led to the decrease of light transmissivity. It was also found that the lowering of mechanical properties in polycarbonate film was attributed to the morphological change due to the solvent evaporation rate in film drying process.

• Applied Chemistry for Engineering
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• v.35 no.2
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• pp.128-133
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• 2024

Although antisolvent-assisted crystallization is one of the promising processes to produce high-quality perovskite films, general antisolvents such as chlorobenzene (CB) have toxic and volatile properties. In addition, CB is not suitable to control the crystallization of perovskite in the atmospheric air. In this work, isopropyl acetate (IA) is used as an eco-friendly antisolvent to demonstrate air-processed perovskite solar cells, and ethyl-4-cyanocinnamate (E4CN) with a cyano group, carbonyl group, and aromatic ring is introduced in IA to improve the performance and stability of devices. Defects at the surface and grain boundaries of the perovskite layer, such as un-coordinated Pb²⁺ and iodine, can be decreased resulting from the interaction of E4CN and perovskite, and thus reduced recombination and enhanced carrier transport can be expected. As a result, the perovskite device with E4CN achieves a high maximum power conversion efficiency (PCE) of 18.89% and outstanding stability, maintaining 60% of the initial efficiency for 300 h in the air without any encapsulation.

• Conservation and Restoration of Cultural Heritage
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• v.1 no.1
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• pp.29-37
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• 2012

The West Stone Pagoda at Gameunsaji Temple Site constructed in the 7th century is mainly composed of dark grey dacitic tuff bearing small numerous dioritic xenoliths. These xenoliths resulted in small holes due to differential weathering process from the host rocks. Physical strength of the pagoda was decreased due to weathering and damage caused by petrological, biological and coastal environmental factors. The southeastern part of the pagoda was extremely deteriorated that the rock surface showed exfoliation, fracture, open cavity, granular decomposition of minerals and salt crystallization by seawater spray from the eastern coast. The stone blocks were intersected by numerous cracks and contaminated by subsequent material such as cement mortar and iron plates. Also, the pagoda was colonized by algae, fungi, lichen and bryophytes on the roof rock surface and the gaps between the blocks. As a result of ultrasonic test, the rock materials fell under Highly Weathered Grade (HW) or Completely Weathered Grade (CW). Thus, conservational intervention is essentially required to prevent further weakening of the rock materials.

• Composites Research
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• v.26 no.1
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• pp.60-65
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• 2013

A nanolaminate consisting of alternate layers of aluminium oxide ($Al_2O_3$) (5 nm) and zirconium oxide ($ZrO_2$) (20 nm) was deposited at an optimized oxygen partial pressure of $3{\times}10^{-2}$ mbar by pulsed laser deposition. The nanolaminate film was analysed using high temperature X-ray diffraction (HTXRD) to study phase transition and thermal expansion behaviour. The surface morphology was investigated using field emission scanning electron microscopy (FE-SEM). High temperature X-ray diffraction indicated the crystallization temperature of tetragonal zirconia in the $Al_2O_3/ZrO_2$ multilayer-film was 873 K. The mean linear thermal expansion coefficient of tetragonal $ZrO_2$ was $4.7{\times}10^{-6}\;K^{-1}$ along a axis, while it was $13.68{\times}10^{-6}\;K{-1}$ along c axis in the temperature range 873-1373 K. The alumina was in amorphous nature. The FESEM studies showed the formation of uniform crystallites of zirconia with dense surface.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.