• Journal of Korean Society on Water Environment
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• v.21 no.1
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• pp.59-65
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• 2005

A phosphate recovery system from artificial wastewater was developed using a completely mixed phosphorus crystallization reactor, in which powdered converter slag was used as a seeding crystal. In preliminary test, the optimal pH range for meta-stable hydroxyapatite crystallization for high phosphorus concentration was observed to be 6.0 to 7.0, which was different from the conventionally known pH range (8.0~9.5) for effective crystallization in relatively low phosphorus concentration less than 5 mg/L. The average phosphorus removal efficiency in a lab-scaled completely mixed crystallization system for artificial wastewater with about 100 mg/L of average $PO_4-P$ concentration was shown to be 60.9% for 40 days of lapsed time. XRD analysis exhibited that crystalline of hydroxyapatite formed on the surface of seed crystal, which was also observed in SEM analysis. In EDS mapping analysis, composition mole ratio (=Ca/P) of the crystalline was found to be 1.78, indicating the crystalline on the surface of seed crystal is likely to be hydroxyapatite. Particle size distribution analysis showed that average size of seed crystal increased from $28{\mu}m$ up to $50{\mu}m$, suggesting that phosphorus recycling from wastewater with high phosphorus concentration can be successfully obtained by using the phosphorus crystallization recovery system.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1162-1170
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• 1998

Applicability of crystallization kinetics on thermal analysis was investigated for PbO-TiO2-B2O3-BaO glass systems together with theoretical background of kinetics and electron microscopic observations on nu-cleation and crystallization. Kissinger equation can be used on DTA under the assumption that the nucleus density is fixed during DTA runs. Crystallization mechanism affected on the activation energy Ek obtained from powder samples which is used for domination of surface crystallization. Avrami parameter n that was obtained from Ozawa equation represented closely the crystallization mechanisms observed by an electron microscope. The modified Kissinger equation takes into account crystallization mechanism thereby pro-ducing the true activation energy of crystallization.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.181-185
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• 2000

A new technique capable of accelerating the crystallization of ferrite powder at low temperature is developed. Effects of the ultrasonic waves on the crystallization were studied for ferrite powders prepared using the co-precipitation method. The crystallization of the ferrite powders exposed to the ultrasonic waves were characterized by the XRD. The amorphous ferrite powders prepared using the co-precipitation method were crystallized as a result of the exposure to the ultrasonic waves for 5h and the crystallization of the ferrite powders became more enhanced in proportion to the time exposed. The ferrite powder exposed to the ultrasonic waves for 25h had higher crystallinity a larger specific surface area than the ferrite powder calcined at 500$^{\circ}C$ for 2h.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.80-85
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• 2004

Chromium-carbon (Cr-C) and chromium-carbon-phosphorus (Cr-C-P) alloy deposits using trivalent chromium sulfate baths containing potassium formate were prepared to study their current efficiency, hardness change and phase transformations behavior with heat treatment, respectively. The current efficiencies of Cr-C and Cr-C-P alloy deposits increase with increasing current density in the range of 15-35 A/dm$^2$. Carbon content of Cr-C and phosphorous of Cr-C-P layers decreases with increasing current density, whereas, the carbon content of Cr-C-P layer is almost constant with the current density. Cr-C deposit shows crystallization at $400^{\circ}C$ and has (Cr+Cr$_{ 23}$$C_{6}$) phases at $800^{\circ}C$. Cr-C-P deposit shows crystallization at $600^{\circ}C$ and has (Cr+Cr$_{23}$ $C_{6}$$+Cr_3$P) phases at $800^{\circ}C$. The hardness of Cr-C and Cr-C-P deposits after heating treatment for one hour increase up to Hv 1640 and Hv 1540 and decrease about Hv 820 and Hv 1270 with increasing annealing temperature in the range of $400～^{\circ}C$, respectively. The hardness change with annealing is due to the order of occurring of chromium crystallization, precipitation hardening effect, softening and grain growth with temperature. Less decrease of hardness of Cr-C-P deposit after annealing above $700^{\circ}C$ is related to continuous precipitation of $Cr_{23}$ $C_{6}$ and $Cr_3$P phases which retard grain growth at the temperature.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.451-456
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• 2007

This paper presents results and observations obtained from a study of sintering behavior and crystallization in $Li_2O-Al_2O_3-SiO_2$ (LAS) Glass by screen printing method. The variable experimental conditions were determined carefully by Thermal-Mechanical Analyzer (TMA), Differential Thermal Analyzer (DTA) for setting the optimum transparent sintering conditions in LAS glass system, $10.5Li_2O-14.7Al_2O_3-58.1SiO_2-16.7B_2O_3(wt%)$, such as glass-ceramics which usually have low crystallization temperatures. Crystallization glasses generated during sintering was observed from diffraction patterns by X-Ray Diffraction (XRD), transmittance by UV-Vis spectrometer. Finally, the optimum sintering condition of LAS glass and the relation between factors and results in several sintering conditions were given by using Response Surface Methodology (RSM). From this study, we confirmed that crystallization interrupted densification during glass powder sintering. Furthermore, we observed that main effect of factors in glass powder sintering with concurrent crystallization depended on experimental conditions from main effects plot by MINTAB-14.

• Journal of the Korean Mathematical Society
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• v.47 no.5
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• pp.925-934
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• 2010

A crystallization of a closed connected PL manifold M is a special edge-colored graph representing M via a contracted triangulation. The regular genus of M is the minimum genus of a closed connected surface into which a crystallization of M regularly embeds. We disprove a conjecture on the regular genus of $\mathbb{S}\;{\times}\;\mathbb{S}^n$, $n\;{\geq}\;3$, stated in [J. Korean Math. Soc. 41 (2004), no. 3, p. 420].

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.254-257
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• 2009

The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1659-1661
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• 2004

Measurement of supersaturation is important in crystallization processes, because it is one of key factors to control crystal size distribution and shape determining product quality. A monitoring system of the supersaturation using a quartz crystal sensor is applied to the supersaturation measurement. From the variation of resonant frequency, the beginning of the formation of salt crystal on the sensor surface is detected while the sensor is directly cooled down. The degree of supersaturation is computed from the solubility difference at the temperatures of the salt solution and the sensor. The performance of the propsed system of the supersaturation measurement is examined by applying the system to the crystallization of three different salt solutions. The experimental outcome compared with eye observation result and photographic analysis indicates that the proposed system is effective and useful to determine the supersaturation in the crystallization process. In addition, the microscopic monitoring of the initial stage crystallization is available with the sensor system.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.