• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.2
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• pp.207-212
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• 2008

This study focused on shorten the period of the struvite crystal birth and development by adding seed materials. For this purpose, three different seed materials were selected: sand, anthracite and struvite. The experiments has been conducted to evaluate the effect of the particle size of the selected seed material on the struvite crystallization, and to study the mixing effect which can be expressed by the value of $G{\cdot}t_d$(the multiple of mean velocity gradient(G) and mixing time($t_d$)). It was observed in this study that the removal efficiency of ammonia nitrogen increased by 9%, 11%, and 20% for sand, anthracite, and struvite added as the seed material, respectivley. This indicated that the struvite crystallization efficiency had a close correlation with the specific surface area of the seed particle. It was found that when struvite was selected as the seed material, the struvite crystallization proceeded at lower $G{\cdot}t_d$ value as compared with other seed materials. This observation implied that the secondary crystal birth would be dominated in this reaction. It was concluded in this study that the particle size was not significant factor on the struvite crystallization, while the $G{\cdot}t_d$ value was a considerably important factor in terms of the theory of the struvite crystal birth.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.611-616
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• 2011

In the study, annealing temperature was optimized by comparing with avrami crystallization rate and constant (k) using non-oriented PLA film as a base film. Crystallization rate constant of PLA film was 1.64, 1.68, and 1.26 at $120^{\circ}C$, $130^{\circ}C$, and $140^{\circ}C$, respectively. Annealing temperature was mainly affected on the surface properties such as rougnness (Ra) and kinetic friction coefficient (${\mu}_k$). Roughness of PLA film was 0.006 ${\mu}m$ at $80^{\circ}C$ and increased to 0.009 ${\mu}m$ 0.015 ${\mu}m$, 0.027 ${\mu}m$, and 0.029 ${\mu}m$ at $110^{\circ}C$, $120^{\circ}C$, $130^{\circ}C$ and $140^{\circ}C$, respectively. Kinetic friction coefficient decreased 0.45 to 0.43, 0.33, 0.31, 0.27 as annealing temperature was at $80^{\circ}C$, $110^{\circ}C$, $120^{\circ}C$, $130^{\circ}C$, and $140^{\circ}C$, respectivly. In addition, rate constant (k) was 0.58, 0.46, and 0.39 with adding 1 wt%, 3 wt%, and 5 wt% talc, respectively.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.138-143
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• 2011

To investigate the electromagnetic interference shielding efficiency (EMI SE) property based on heat treatment effects of carbon fibers in various temperatures, the polyacrilonitrle-based carbon fibers were prepared by electrospinning method and treated at 1073, 1323, 1873 and 2573 K. The surface morphology of carbon fibers was investigated by using FE-SEM and the carbon crystallization was studied by Raman spectroscopy based on effects of reaction temperatures. The electrical conductivity was obtained by measuring the surface resistance with four probe method on carbon crystallization. The permittivity, permeability and EMI SE were investigated by using S-parameter in the range of 800~4500 MHz. In case of carbon fibers treated at 2573 K, the improved carbon crystallization was confirmed by Raman spectrum and the enhanced electrical conductivity showing 54.7 S/cm was also observed. The permittivity was dramatically improved by factor of 4 based on effect of high reaction temperature. Eventually, the highly improved EMI SE value was obtained showing around 41.7 dB.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.35-58
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• 2000

The demand for sub-micrometer or nanometer functional ceramic powders with a better suspension behavior in aqueous media in increasing. Redispersible barium titanate (BT) nanocrystals, green light emitting Mn2+ doped Zn$_2$SiO$_4$ and ZnS nanoparticle phosphors were synthesized by a hydrothermal method or chemical precipitation with surface modification. The nanoparticle redispersibility for BT was achieved by using a polymeric surfactant. X-ray diffraction(XRD) results indicated that the BT particles are of cubic phase with 80 nm in size. XRD results of zinc silicate phosphor indicate that seeds play an important role in enhancing the nucleation and crystallization of Zn$_2$SiO$_4$ crystals in a hydrothermal condition. This paper describes and discuss the methods of surface modification, and the resulting related properties for BT, zinc silicate and zinc sulfide.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• Journal of the Korean Ceramic Society
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• v.28 no.1
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• pp.29-36
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• 1991

Microporous glasses in the system TiO2-SiO2-Al2O3-B2O3-CaO-Na2O were prepared by the phase-separation technique. Morphology and distribution of pore and specific surface area of glasses heated and leached out at various conditions were investigated by SEM and Porosimeter. Crystallization of glasses heated above transition temperature was also inspected by X-ray diffraction method. When the heating temperature and time increased, the pore size and volume increased, but the specific surface area decreased above the critical temperature. The phase-separation, specific surface area and pore size showed more sensitive change on the variation of heating temperature than of heating time. The specific surface area and micropore volume of porous glasses prepared in this study were about 120-330$m^2$/g and 0.001-0.01cc/g, respectively. Mean pore size of porous glasses were about 20-90$\AA$. Anatase phases was deposited when the parent glass was heat-treated at 75$0^{\circ}C$ for 6hrs.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.326-334
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• 2004

Deposit charateristics of Electroless nickel(EN) were investigated with various complexing agents. As expected, the deposition rate of nickel is increased with pH and that of Phosphorous is decreased with pH. The result of SEM investigation shows that the rough surface crystallization is appeared with pH. It is show that the surface resistance of EN deposit is decreased with pH at 85$^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.31-36
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• 2011

$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.