• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.68-72
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• 2003

In this paper, we developed a new thick photoresist fabrication technology for 3-dimensional microstructures. In general, like as AZ photoresist was coated with thin film thickness about 1 $\mu\textrm{m}$ to 30 $\mu\textrm{m}$, but photoresist like SU-8 has thickness of several tens $\mu\textrm{m}$ or more and high aspect ratio. When we fabricate a microstructure using the thick photoresist like SU-8, cracks on the SU-8 thick photoresist are appeared by stress which was caused by sudden cooling down during bake of the thick photoresist spun on wafer. Thus, it was hard to fabricate the microstructure using the thick photoresist for electroplating. In this paper, we developed a new process to produce a 3-dimensional microstructure without the crack by stress through a suitable thick photoresist coating, time control of cool down and time control of PEB (Post Expose Bake).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.43-44
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• 2005

SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image is desired. But SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination. Based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factional design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.191-194
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• 2005

SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image are desired. However SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination, based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factorial design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

• Laser Solutions
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• v.10 no.2
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• pp.17-24
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• 2007

We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

• Carbon letters
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• v.24
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• pp.55-61
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• 2017

Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.891-894
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• 2005

SU-8은 부드러운 벽면을 가지는 두꺼운 패턴을 제작하는 데 사용되는 음성 감광제(negative photoresist)이다 .이것은 처리 후에 강성이 높고 화학적으로 강인한 장점을 가지고 있으며 최근 MEMS 디바이스의 구조체로 쓰이고 있다. 그러나 SU-8은 공정 처리요소들에 대하여 매우 민감하고 사용하기 어려운 것으로 알려져 있다. 본 연구에서는 공정 처리요소로 exposure energy, post exposure bake (PEB) temperature, PEB time을 조절하여 실험을 하였다. Response Surface Methodology (RSM)를 이용해 각 인자가 delamination에 미치는 영향에 대해 분석하였고 이를 바탕으로 SU-8의 delamination을 최소화하기 위한 처리요소들의 최적화 방안을 제시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.21-23
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• 2006

A newly designed micro-plasma device using SU-8 photoresist as a barrier rib has been successfully fabricated and characterized. Operating in neon gas at pressures from 300 to 800 Torr and having hexagonal structure, $5{\times}5$ arrays of micro-plasma device have been investigated. The driving voltage is lower than 250 V.

• Journal of Sensor Science and Technology
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• v.16 no.5
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• pp.325-330
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• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• Proceedings of the KAIS Fall Conference
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• 2002.11a
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• pp.238-242
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• 2002

본 논문에서는 3차원 마이크로구조물을 위한 새로운 Thick Photoresist(TPR) 공정 기술을 개발하였다. 일반적으로 Thin Photoresist는 얇은 두께로 코팅을 할 수 있다. 그러나 SU-8과 같은 TRP은 몇 십 ㎛ 또는 그 이상으로 코팅이 가능하고 높은 종횡비를 얻을 수 있다. SU-8과 같은 TPR을 사용하여 마이크로구조물을 제작할 때 TPR의 crack들은 bake시의 갑작스런 tool down에 의한 stress에 의해 나타나는데, 이러한 crack들은 마이크로구조물의 도금을 어렵게 만든다. 본 논문에서는 TPR의 코팅, baking 시간 조절, cool down과 PEB(Post Expose Sake) 시간 조절을 통하여 stress에 의해 발생되는 crack이 없는 3차원 마이크로구조물을 제작할 수 있는 새로운 공정 기술을 개발하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.895-896
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• 2009