• 제목/요약/키워드: STM images

검색결과 35건 처리시간 0.024초

Footprints of water molecules on Si(001) and co-adsorption configurations obtained via low temperature scanning tunneling microscopy

  • Tham, Tran Thi;Son, Lee-Seul;Oh, Suhk-Kun;Kang, Hee-Jae;Kim, Han-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.86-86
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    • 2010
  • Water adsorption on Si(001)-c($4{\times}2$) surface is investigated at low temperature by using scanning tunneling microscope (STM) and ab initio pseudopotential calculations. $H_2O$ configurations of single and cluster of two molecules reveal "Y", "X" and "W" depressions as footprints on the surface. Atomic structures of $H_2O$ molecules, which are dissociatively adsorbed on the Si(001)-c($4{\times}2$) surface, are studied with simulated and STM images of the filled states. The generation processes of the growth configurations are systematically considered with elapsed time.

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STM Study of 2-Mercaptoethanol Self-Assembled Monolayer on Au(111)

  • 현문섭;이충균
    • Bulletin of the Korean Chemical Society
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    • 제22권2호
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    • pp.213-218
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    • 2001
  • Presented are the STM images of self-assembled monolayer of 2-mercaptoethanol on Au(111). Striped structures of ($6{\times}3_{\frac{1}{2}}$), ($5{\times}3_{\frac{1}{2}}$), ($4{\times}3_{\frac{1}{2}}$) and compact-($5{\times}3_{\frac{1}{2}}$) were observed after annealing at $80^{\circ}C.$ Analysis of the ordered structures revealed that the basic fundamental units of the ordered structures were three crystallographically non-equivalent ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, and that the way of combination of the assemblies produced the four different structures. The($6{\times}3_{\frac{1}{2}}$) structure ( $\theta$ = 0.33) was composed of one ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$)$R30^{\circ}$ assembly, while the ($5{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.30) and ($4{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.38) structures were consisted of two ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, separated by 5a and 4a, respectively. Furthermore, the compact-(5X 3½) structure ( $\theta$ = 0.50) was obtained by overlapping three ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies. In spite of the diversity in the adsorption structures, all the adsorption sites of 2-mercaptoethanol were fundamentally identical. On the other hand, the unannealed primitive SAM of 2-mercaptoethanol was characterized by two observations: a short-range order keeping the adsorbed molecules at approximately $3_{\frac{1}{2}}$ a and the small domains of the striped structures supporting that the observed surface structures on the annealed surface were the extension of the primitive layer of 2-mercaptoethanol. Comparing these observations with the already published structures of ethanthiol, it was concluded that the interaction between the hydroxyl groups of 2-mercaptoethanol might play a significant role in the adsorption step of 2-mercaptoethanol on Au(111) to organize the adsorption structures different from those of ethanthiol.

Dissociative adsorption structure of guanine on Ge(100)

  • Youn, Young-Sang;Kim, Do Hwan;Lee, Hye Jin;Kim, Sehun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.109.1-109.1
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    • 2015
  • Understanding the reaction mechanisms and structures underlying the adsorption of biomolecules on semiconductors is important for functionalizing semiconductor surfaces for various bioapplications. Herein, we describe the characteristic behavior of a primary nucleobase adsorbed on the semiconductor Ge(100). The adsorption configuration of guanine, a primary nucleobase found in DNA and RNA, on the semiconductor Ge(100) at an atomic level was investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. When adsorbed on Ge(100) at room temperature, guanine appears dark in STM images, indicating that the adsorption of guanine on Ge(100) occurs through N-H dissociation. In addition, DFT calculations revealed that "N(1)-H dissociation through an O dative bonded structure" is the most favorable adsorption configuration of all the possible ones. We anticipate that the characterization of guanine adsorbed on Ge(100) will contribute to the development of semiconductor-based biodevices.

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원자력 현미경(AFM)에 의한 알루미늄 합금의 피로 스트라이에이션 관찰 (The Observation of Fatigue Striations for Aluminum Alloy by Atomic Force Microscope(AFM))

  • 최성종;권재도
    • 대한기계학회논문집A
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    • 제24권4호
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    • pp.955-962
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    • 2000
  • Scanning Probe Microscope (SPM) such as Scanning Tunneling Microscope (STM) and Atomic Force Microscope (AFM) was shown to be the powerful tool for nano-scale characterization of a fracture surface . AFM was used to study cross sectional profiles and dimensions of fatigue striations in 2017-T351 aluminum alloy. Their widths (SW) and heights (SH) were measured from the cross sectional profiles of three-dimension AFM images. The following results that will be helpful to understand the fatigue crack growth mechanism were obtained. (1) Coincidence of the crack growth rate with the striation width was found down to the growth rate of 10-5 mm/cycle. (2) The relation of SH=0.085(SW)1.2 was obtained. (3) The ratio of the striation height to its width SH/SW did not depend on the stress intensity factor range K and the stress ratio R. (4) Not only the SW but also the SH changed linearly with the crack tip opening displacement (CTOD) when plotted in log-log scale. From these results, the applicability of the AFM to nano-fractography is discussed.

Si(100)와 Si(111) 표면의 Ge 에피 성장 연구 (Epitaxial Growth of Ge on Si(100) and Si(111) Surfaces)

  • 강윤호;국양
    • 한국진공학회지
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    • 제2권2호
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    • pp.161-165
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    • 1993
  • Si(100)와 Si(111) 표면에 에피 성장시킨 Ge의 기하학적, 전기적 구조가 scanning tunneling microscope로 연구되었다. Ge 원자는 scanning tunneling spectroscopy와 bias 전압을 달리한 STM 상에서 Si 원자와 구별되었다. 이것을 이용하여 Ge의 성장 형태를 연구하였다. (2${\times}$1) 재배열 구조를 가진 (100) 표면에서 Ge 성장층은 720K에서 B형의 step edge로부터 주로 성장하였다. (111) 표면에서도 주로 step edge에서 성장하였으며, Ge의 양과 annealing 온도에 따라 (5${\times}$5)와 (7${\times}$7)구조가 보였다.

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Influence of Fe(110) Substrate with strong On-site Coulomb Repulsion on the Electronic Structure of Single Cobalt Tetraphenylporphyrin: Scanning Tunneling Microscopy Study

  • 오영택;정호균;서정필;김효원;전상준;김성민;유재준;국양
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.94-94
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    • 2010
  • Scanning tunneling microscopy (STM) was used to study the electronic structure of cobalt(II) tetraphenylporphyrin (CoTPP) on the Fe/W(110) substrate. Clover-like conformation of CoTPP was observed and showed bias dependent STM images. The central Co(II) ion of this porphyrin was protruded on the positive biases, but it was depressed on the negative biases. On the positive biases, the phenyl rings of CoTPP appeared to be bright contrary to the invisible pyrrole rings. These results were compared the first-principles calculations using GGA and GGA+U to elucidate the influence of the Fe substrate. GGA+U results agreed well with the experimental results; however, GGA did not. These results show that proper treatment of the on-site Coulomb repulsion of the Fe ions is crucial to describe the electronic structure of this system. By the comparison between the GGA+U calculations on the Fe substrate and the gas phase calculations, it can be noted that chemical potential shift occurred accompanying charge transfer from the Fe ions of the substrate to the pyrrole ligand of the porphyrin.

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Stereoselective attachment of S-Proline on Ge(100)

  • Youn, Young-Sang;Kim, Ki-Jeong;Kim, Bong-Soo;Lee, Hang-Il;Kim, Se-Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.367-367
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    • 2010
  • The adsorption configurations of S-proline on Ge(100) were studied using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We identified three adsorption structures of S-proline on Ge(100) through analysis of the STM images, DFT calculations, and HRCLPES results: (i) an 'intrarow O - H dissociated and N dative bonded structure', (ii) an 'O - H dissociation structure', and (iii) an 'N dative bonded structure'. Moreover, because adsorption through the N atom of S-proline produces a new chiral center due to symmetry reduction by N dative bonding, the adsorption configurations have either (R,S) or (S,S) chirality, yielding an (R,S)-'intrarow O - H dissociated and N dative bonded structure' and an (R,S)-'N dative bonded structure', with a preference for reaction at the Re face. This work presents a novel method for generating stereoselective attachment using S-proline molecules adsorbed onto a Ge(100) surface.

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Identification of native defects on the Te- and Bi-doped Bi2Te3 surface

  • Dugerjav, Otgonbayar;Duvjir, Ganbat;Kim, Jinsu;Lee, Hyun-Seong;Park, Minkyu;Kim, Yong-Sung;Jung, Myung-Wha;Phark, Soo-hyon;Hwang, Chanyong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.170.1-170.1
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    • 2016
  • $Bi_2Te_3$ has long been studied for its excellent thermoelectric characteristics. Recently, this material has been known as a topological insulator (TI). The surface states within the bulk band gap of a TI, which are protected by the time reversal symmetry, contribute to the conduction at the surface, while the bulk is in insulating state. In contrast to the bulk defects tuning the chemical potential to the Dirac energy, the native defects near the surface are expected not to change the shape of the Fermi surface and the related spin structure. Using scanning tunneling microscopy (STM), we have systematically characterized surface or near surface defects in p- and n- doped $Bi_2Te_3$, and identified their structure by first principles calculations. In addition, bias-polarity dependences of STM images revealed the electron donor/acceptor nature of each defect. A detailed theoretical study of the surface states near the Dirac energy reveals the robustness of the Dirac point, which verifies the effectiveness of the disturbance on the backscattering from various kinds of defects.

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Investigation of the Scanning Tunneling Microscopy Image, the Stacking Pattern and the Bias-voltage Dependent Structural Instability of 2,2'-Bipyridine Molecules Adsorbed on Au(111) in Terms of Electronic Structure Calculations

  • Suh, Young-Sun;Park, Sung-Soo;Kang, Jin-Hee;Hwang, Yong-Gyoo;Jung, D.;Kim, Dong-Hee;Lee, Kee-Hag;Whangbo, M.-H.
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.438-444
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    • 2008
  • A self-assembled monolayer of 2,2'-bipyridine (22BPY) molecules on Au(111) underwent a structural phase transition when the polarity of a bias voltage was switched in scanning tunneling microscopy (STM) experiments. The nature of two bright spots representing each 22BPY molecule on Au(111) in the high-resolution STM images was identified by calculating the partial density plots for a monolayer of 22BPY molecules adsorbed on Au(111) using tight-binding electronic structure calculations. The stacking pattern of the chains of 22BPY molecules on Au(111) was explained by examining the intermolecular interactions between the 22BPY molecules based on first principles electronic structure calculations for a 22BPY dimer, (22BPY)2. The structural instability of the 22BPY molecule arrangement caused by a change in the bias voltage switch was investigated by estimating the adsorbate-surface interaction energy using a point-charge approximation for Au(111).