Footprints of water molecules on Si(001) and co-adsorption configurations obtained via low temperature scanning tunneling microscopy

Water adsorption on Si(001)-c($4{\times}2$) surface is investigated at low temperature by using scanning tunneling microscope (STM) and ab initio pseudopotential calculations. $H_2O$ configurations of single and cluster of two molecules reveal "Y", "X" and "W" depressions as footprints on the surface. Atomic structures of $H_2O$ molecules, which are dissociatively adsorbed on the Si(001)-c($4{\times}2$) surface, are studied with simulated and STM images of the filled states. The generation processes of the growth configurations are systematically considered with elapsed time.