• STI Policy Review
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• v.6 no.2
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• pp.105-145
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• 2015

Science, technology and innovation (STI) is crucially important to eradicating poverty, and making advances in various areas such as agriculture, health, environment, transport, industry, and telecommunications. Therefore, it is vital to the overall socioeconomic development of nations. The indispensable role of STI in the competitive globalized economy led to several attempts to measure national STI capacities. The present study outlines STI capacity around three sets of capabilities: technological capabilities, social capabilities, and common capabilities. The Global Science, Technology and Innovation Capacity (GSTIC) index was developed to provide current evidence on the national STI capacities of the countries, and to improve the composite indicators used for such purposes. The GSTIC ranks a large number of countries (167) on the basis of their STI capacities and categories them into four groups: i.e. leaders, dynamic adopters, slow adopters, and laggards. For more meaningful assessment of the STI capacities of nations, it captures the achievement gaps of individual countries with the highest achiever. The study also provides ranking and achievement gaps of nations in the nine GSTIC pillars: technology creation, R&D capacity, R&D performance, technology absorption, diffusion of old technologies, diffusion of recent innovations, exposure to foreign technology, human capital, and enabling factors. A more detailed analysis of the strengths and weaknesses in different pillars of STI capacity of ten selected countries is also provided. The results show that there are significant disparities among nations in STI capacity and its various aspects, and developing countries have much to catch-up with the developed nations. However, different countries may adopt different strategies according to their strengths and weaknesses. Useful insight into the strengths and weaknesses of the national STI capacities of different countries are provided in the study.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.17-23
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• 2002

The more productive and stable fabrication can be obtained by applying chemical mechanical polishing (CMP) process to shallow trench isolation (STI) structure in 0.18 $\mu\textrm{m}$ semiconductor device. However, STI-CMP process became more complex, and some kinds of defect such as nitride residue, tern oxide defect were seriously increased. Defects like nitride residue and silicon damage after STI-CMP process were discussed to accomplish its optimum process condition. In this paper, we studied how to reduce torn oxide defects and nitride residue after STI-CMP process. To understand its optimum process condition, We studied overall STI-related processes including trench depth, STI-fill thickness and post-CMP thickness. As an experimental result showed that as the STI-fill thickness becomes thinner, and trench depth gets deeper, more tern oxide were found in the CMP process. Also, we could conclude that low trench depth whereas high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• STI Policy Review
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• v.5 no.1
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• pp.34-56
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• 2014

This paper reviews the most central analytical and methodological issues that arise in developing national STI strategies. First, an outline of the relationship between national innovation systems and the strategic dimension is presented. The paper shows that science, technology and innovation strategy are often used in different forms and that there is no common understanding yet of the actual meaning and coverage of these strategies. The paper develops the terminology from a discussion of different approaches towards company innovation processes analyzing their evolution in different socioeconomic environments and the role and impact of science, technology and innovation policy on company innovation processes. Based on this conceptual understanding the paper defines national science, technology, innovation, and STI strategy and explains the basic terminology. From these definitions, the strategic dimension including the impact on the stakeholders is discussed. It is shown that a major success factor for STI strategy development is the involvement of stakeholders to vary and extend their use of their portfolio of instruments. Moreover it becomes evident that stakeholders follow their own interests which aren't necessarily in the interest of the national STI strategies. The analysis shows advantages and disadvantages as well as potentials and limitations of different approaches to develop STI strategies in their ability to describe the reality of innovation processes and to allow conclusions about the relationship between innovation policy and the innovation processes implemented by companies. It is shown that knowledge of these limitations is an important factor to consider in designing consistent and coherent national STI policy which aims at supporting innovation eventually. Finally the paper concludes that the STI policy mix concept needs a more systemic development approach which is integrated in the national STI strategy development and implementation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.199-209
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• 2018

Polyethersulfone (PES)/sulfonated $TiO_2$ ($STiO_2$) nanoparticles (NPs) UF blended membranes were fabricated with different loadings of $STiO_2$. The modified membranes exhibited significant improvement in surface roughness, porosity, and pore size when compared to the PES membrane. The $P-STiO_2$ 1 and $P-TiO_2$ 1 blended membranes exhibited higher water flux, approximately 102.4% and 62.6%, respectively, compared to PES. SPP-$STiO_2$ and $P-STiO_2$ showed lower Rir fouling resistance than the $P-TiO_2$ blended membrane. Overall, the $STiO_2$-blended membranes provide high hydrophilicity permeability, anti-fouling performance, and improved BSA rejection attributed to the hydrogen bonding force and more electrostatic repulsion properties of $STiO_2$.

• Applied Biological Chemistry
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• v.33 no.2
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• pp.109-115
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• 1990

This study was carried out to investigate the effect of L-cysteine and sodium sulfite on heat inactivation of soybean trypsin inhibitor(STI) and to determine cultivar difference in the inhibitory activity of STI. Effect of L-cysteine and sodium sulfite at different concentrations, pH's, and lengths of treatment on inactivation of STI were studied. The inactivation of STI was spectrophotometrically determined by measuring the rate of production of p-nitroaniline from synthetic substrate, N-benzoyl-DL-arginine-p-nitroanilide. Addition of L-cysteine and sodium sulfite increased magnitude of heat inactivation and greatly inhibited the re-activation of STI. There was no difference STI inactivation in among soybean cultivars employed. The trypsin inhibitory activity of STI of the soybean cultivars ranged from 64.7 to 86.4 TIU(trypsin inhibitor unit) per gram soyflour and the decreasing order of the TIU was Jangback>Hill>Jangyeab, Kwangkyo> Danyeab>Dangkyung>Paldal, Saeal, Duckyu>Hwangkeum. Inhibitory activity of STI was correlated with cysteine $content(r=0.6568^*)$ and with $digestivility(r=-0.7695^{**})$, but there was no correlation between the protein content and the inhibitory activity of STI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of Korean Library and Information Science Society
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• v.20
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• pp.317-349
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• 1993

The purpose of this study lies in identifying Korean scientists' dependency on foreign scientific and technical information (STI), with emphasis on investigating the causes and results. Especially, this study intends to investigate the impacts that a growing dependency on foreign STI might have brought and will bring about on the development of indigenous STI in ROK. To the end, the present discussion covers the following specific research questions: 1) what are the major information sources used by Korean scientists to locate STI necessary for research-related activities\ulcorner 2) to what extent do Korean scientists use foreign STI for research-related activates, as compared to the use of domestic STI\ulcorner 3) what are the major factors causing the information dependency among Korean scientists and what are the results of the growing information dependency\ulcorner And finally, 4) what suggestions can be made for ROK to further its indigenous STI development, while minimizing its dependency on foreign STI\ulcorner Survey method, together with citation analysis method, is employed as the major data collection technique. The survey sample consists of 167 most 'representative' Korean scientists selected on the basis of their research productivity. 167 specially-designed questionnaires were mailed and 104 out of 167 were responded. Follow-up interviews were carried out for 32 out of 104 respondents, who returned the questionnaire but did not answer some specific questions. The data collected from these 104 respondents were analyzed on the basis of two distinguished groups namely, junior and senior scientist groups. Among the 104 respondents, 58 a n.0, ppeared to belong to a group of senior scientists (older than age 45 and finished their final degrees since 1980), and 46 belonged to a group of junior scientists (younger than age 45 and finished their final degrees before 1980). The major findings of the present study include: 1) Korean scientists regard 'scientific and technical journals and books'as the most important information source to obtain the recent STI; 2) their dependency on foreign STI, for the purposes of research and teaching, is extremely high (information dependency for research activities is 88.5%, and that for teaching activities 91.2%); 3) the information dependency of junior scientists are higher than that of senior scientists; 4) Korean scientists' growing information dependency is closely related to both small quantity and low quality of domestically-produced STI, and has a statistically significant relationship with their educational background; and finally, 5) in order to theoretically explain the growing information dependency of Korean scientists, a hypothesis - 'chronic cycle of information dependency' was developed and introduced. The present study suggests the promotion of indigenous STI as a desirable alternative to escape from the 'chronic cycle of information dependency. Localization of the imported foreign STI is suggested as a good strategy for the indigenous STI development, and also suggested are STI policies for both success of localization process and promotion of more efficient STI flows at national and international level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1175-1180
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• 2022

STI has been studied a lot as a process technology for wide area planarization according to miniaturization and high integration of semiconductor devices. In this study, as methods for improving the STI profile, wet etching of pad oxide using hydrofluorine solution and dry etching of O₂+CF₄ after STI dry etching were proposed. This process technology showed improvement in profile imbalance and leakage current between patterns according to device density compared to the conventional method. In addition, as a result of measuring the HLD thickness after CMP for a device having the same STI depth and HLD deposition, the measured value was different depending on the device density. It was confirmed that this was due to the difference in the thickness of the nitride film according to the device density after CMP and the selectivity of the slurry.