• STI Policy Review
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• 제6권2호
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• pp.105-145
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• 2015

Science, technology and innovation (STI) is crucially important to eradicating poverty, and making advances in various areas such as agriculture, health, environment, transport, industry, and telecommunications. Therefore, it is vital to the overall socioeconomic development of nations. The indispensable role of STI in the competitive globalized economy led to several attempts to measure national STI capacities. The present study outlines STI capacity around three sets of capabilities: technological capabilities, social capabilities, and common capabilities. The Global Science, Technology and Innovation Capacity (GSTIC) index was developed to provide current evidence on the national STI capacities of the countries, and to improve the composite indicators used for such purposes. The GSTIC ranks a large number of countries (167) on the basis of their STI capacities and categories them into four groups: i.e. leaders, dynamic adopters, slow adopters, and laggards. For more meaningful assessment of the STI capacities of nations, it captures the achievement gaps of individual countries with the highest achiever. The study also provides ranking and achievement gaps of nations in the nine GSTIC pillars: technology creation, R&D capacity, R&D performance, technology absorption, diffusion of old technologies, diffusion of recent innovations, exposure to foreign technology, human capital, and enabling factors. A more detailed analysis of the strengths and weaknesses in different pillars of STI capacity of ten selected countries is also provided. The results show that there are significant disparities among nations in STI capacity and its various aspects, and developing countries have much to catch-up with the developed nations. However, different countries may adopt different strategies according to their strengths and weaknesses. Useful insight into the strengths and weaknesses of the national STI capacities of different countries are provided in the study.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.17-23
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• 2002

최근 반도체 소자의 고속화 및 고집적화에 따라 배선 패턴이 미세화 되고 다층의 금속 배선 공정이 요구됨에 따라 단차를 줄이고 표면을 광역 평탄화 시킬 수 있는 STI-CMP 공정이 도입되었다. 그러나, STI-CMP 공정이 다소 복잡해짐에 따라 질화막 잔존물, 찢겨진 산화막 결함들과 같은 여러 가지 공정상의 문제점들이 심각하게 증가하고 있다. 본 논문에서는 이상과 같은 CMP 공정 결함들을 줄이고, STI-CMP 공정의 최적 조건을 확보하기 위해 트렌치 깊이와 STI-fill 산화막 두께가 리버스 모트 식각 공정 후, 트랜치 위의 예리한 산화막의 취약함과 STI-CMP공정 후의 질화막 잔존물 등과 같은 결함들에 미치는 영향에 대해 연구하였다. 실험결과, CMP 공정에서 STI-fill의 두께가 얇을수록, 트랜치 깊이가 깊을수록 찢겨진 산화막의 발생이 증가하였다. 트랜치 깊이가 낮고 CMP 두께가 높으면 질화막 잔존물이 늘어나는 반면, 트랜치 깊이가 깊어 과도한 연마가 진행되면 활성영역의 실리콘 손상을 받음을 알 수 있었다

• STI Policy Review
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• 제5권1호
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• pp.34-56
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• 2014

This paper reviews the most central analytical and methodological issues that arise in developing national STI strategies. First, an outline of the relationship between national innovation systems and the strategic dimension is presented. The paper shows that science, technology and innovation strategy are often used in different forms and that there is no common understanding yet of the actual meaning and coverage of these strategies. The paper develops the terminology from a discussion of different approaches towards company innovation processes analyzing their evolution in different socioeconomic environments and the role and impact of science, technology and innovation policy on company innovation processes. Based on this conceptual understanding the paper defines national science, technology, innovation, and STI strategy and explains the basic terminology. From these definitions, the strategic dimension including the impact on the stakeholders is discussed. It is shown that a major success factor for STI strategy development is the involvement of stakeholders to vary and extend their use of their portfolio of instruments. Moreover it becomes evident that stakeholders follow their own interests which aren't necessarily in the interest of the national STI strategies. The analysis shows advantages and disadvantages as well as potentials and limitations of different approaches to develop STI strategies in their ability to describe the reality of innovation processes and to allow conclusions about the relationship between innovation policy and the innovation processes implemented by companies. It is shown that knowledge of these limitations is an important factor to consider in designing consistent and coherent national STI policy which aims at supporting innovation eventually. Finally the paper concludes that the STI policy mix concept needs a more systemic development approach which is integrated in the national STI strategy development and implementation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.199-209
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• 2018

Polyethersulfone (PES)/sulfonated $TiO_2$ ($STiO_2$) nanoparticles (NPs) UF blended membranes were fabricated with different loadings of $STiO_2$. The modified membranes exhibited significant improvement in surface roughness, porosity, and pore size when compared to the PES membrane. The $P-STiO_2$ 1 and $P-TiO_2$ 1 blended membranes exhibited higher water flux, approximately 102.4% and 62.6%, respectively, compared to PES. SPP-$STiO_2$ and $P-STiO_2$ showed lower Rir fouling resistance than the $P-TiO_2$ blended membrane. Overall, the $STiO_2$-blended membranes provide high hydrophilicity permeability, anti-fouling performance, and improved BSA rejection attributed to the hydrogen bonding force and more electrostatic repulsion properties of $STiO_2$.

• Applied Biological Chemistry
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• 제33권2호
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• pp.109-115
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• 1990

대두 STI의 열처리에 의한 불활성화에 L-cysteine 및 sodium sulfite의 첨가 효과를 조사하고, 대두 품종별 STI활성을 측정하였으며 활성도와 단백질 및 cysteine함량 그러고 소화율과의 관계를 비교하였다. 열처리에 의한 STI의 불활성화에 L-cysteine과 sodium sulfite의 첨가는 불활성화 효과를 크게 증가시켰으며 대두 품종간 불활성화 정도는 차이를 보이지 않았으며 L-cysteine과 sodium sulfite의 첨가는 불활성화된 STI의 재활생화를 크게 억제하였다. 품종별 STI의 활성도는 대두분말 g당 $64.7{\sim}86.47\;TIU$의 범위에 있었으며, 장백>힐>장엽, 광교>단엽>백운>단경>팔달, 새알, 덕유>황금 이었으며, 단백질 함량과 STI의 활성도와는 상관관계(r=-0.192)가 없는 것으로 나타났다. 품종별 cysteine 함량은 힐, 장백, 단경, 단엽, 황금, 백운, 장엽, 새알, 덕유, 광교, 활달의 순서이었으며, cysteine의 함량은 $73.5{\sim}40.0\;{\mu}mole/g$ 대두분 이었다. 또한 cysteine함량과 STI 활성도 사이에 정의 상관(r=0.6568)을 나타냈다. 품종별 소화율은 광교, 백운, 팔달, 단경, 새알, 힐, 장엽, 덕유, 황금, 장백, 단엽의 순서이었으며 $81.9{\sim}76.7%$ 정도이었다. 또한 소화율과 STI활성도 사이에는 부의 상관(r=-0.7695)을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• 한국도서관정보학회지
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• 제20권
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• pp.317-349
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• 1993

The purpose of this study lies in identifying Korean scientists' dependency on foreign scientific and technical information (STI), with emphasis on investigating the causes and results. Especially, this study intends to investigate the impacts that a growing dependency on foreign STI might have brought and will bring about on the development of indigenous STI in ROK. To the end, the present discussion covers the following specific research questions: 1) what are the major information sources used by Korean scientists to locate STI necessary for research-related activities\ulcorner 2) to what extent do Korean scientists use foreign STI for research-related activates, as compared to the use of domestic STI\ulcorner 3) what are the major factors causing the information dependency among Korean scientists and what are the results of the growing information dependency\ulcorner And finally, 4) what suggestions can be made for ROK to further its indigenous STI development, while minimizing its dependency on foreign STI\ulcorner Survey method, together with citation analysis method, is employed as the major data collection technique. The survey sample consists of 167 most 'representative' Korean scientists selected on the basis of their research productivity. 167 specially-designed questionnaires were mailed and 104 out of 167 were responded. Follow-up interviews were carried out for 32 out of 104 respondents, who returned the questionnaire but did not answer some specific questions. The data collected from these 104 respondents were analyzed on the basis of two distinguished groups namely, junior and senior scientist groups. Among the 104 respondents, 58 a n.0, ppeared to belong to a group of senior scientists (older than age 45 and finished their final degrees since 1980), and 46 belonged to a group of junior scientists (younger than age 45 and finished their final degrees before 1980). The major findings of the present study include: 1) Korean scientists regard 'scientific and technical journals and books'as the most important information source to obtain the recent STI; 2) their dependency on foreign STI, for the purposes of research and teaching, is extremely high (information dependency for research activities is 88.5%, and that for teaching activities 91.2%); 3) the information dependency of junior scientists are higher than that of senior scientists; 4) Korean scientists' growing information dependency is closely related to both small quantity and low quality of domestically-produced STI, and has a statistically significant relationship with their educational background; and finally, 5) in order to theoretically explain the growing information dependency of Korean scientists, a hypothesis - 'chronic cycle of information dependency' was developed and introduced. The present study suggests the promotion of indigenous STI as a desirable alternative to escape from the 'chronic cycle of information dependency. Localization of the imported foreign STI is suggested as a good strategy for the indigenous STI development, and also suggested are STI policies for both success of localization process and promotion of more efficient STI flows at national and international level.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• 한국전자통신학회논문지
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• 제17권6호
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• pp.1175-1180
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• 2022

STI는 반도체 소자의 소형화 및 고집적화에 따른 광역 평탄화를 위한 공정 기술로써 많은 연구가 이루어져 왔다. 본 연구에서는 STI의 profile 개선을 위한 방법으로 STI 건식각 후 HF 용액에 의한 pad oxide 습식각과 O₂+CF₄ 건식각을 제안하였다. 이 공정 기술은 기존의 방법보다 소자의 밀집도에 따른 패턴간의 프로파일 불균형과 누설전류의 개선을 나타내었다. 또한 동일한 STI 깊이와 HLD 증착를 갖는 디바이스에 대하여 CMP 후 HLD 두께를 측정한 결과 디바이스 밀도에 따라 측정값이 다르게 나타났고 이는 CMP 후 디바이스 밀도에 따른 질화막의 두께 차이 및 슬러리의 선택비에 기인됨을 확인하였다.