• 한국식품위생안전성학회지
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• 제14권3호
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• pp.270-276
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• 1999

Alteromonas sp. SR-14의 배양여액을 사용하여 C. calcitrans의 증식에 미치는 영향과 조류 증식저해 물질의 특성을 살펴보았다. Alteromonas sp. SR-14의 peptone broth 배양여액은 C. calcitrans에 대하여 증식 저해 활성을 나타내었으며, 이 균에 의한 조류 증식 저해 물질은 온도 $15~20^{\circ}C$, pH 7.0~9.0, 염분 농도 $23~30{\textperthousand}$의배양 조건에서 강한 활성으로 생성되었으며, 이러한 조건(온도 $20^{\circ}C$, pH 8.0, 염분 농도 $30\textperthousand$)에서는 정지기부터 활성이 증가하였다. Alteromonas sp. SR-14가 peptone broth에서 생산하는 조류 증식 저해 물질의 분자량은 약 3KDa~12KDa의 복합 물질이었는데, $100^{\circ}C$에서 10분간 열처리하였을 때 3~10KDa 이하의 물질은 내열성이 있었으나 10KDa 이상의 물질은 불활성 되었다.

• 대한전자공학회논문지SD
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• 제37권1호
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• pp.36-43
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• 2000

청색 발광 SrS:CuCl TFEL 소자의 휘도를 향상시키기 위하여 황 압력과 열처리 조건을 최적화하여 SrS:CuCl TFEL 소자를 제작하였다. 전자빔 증착 장비를 이용하여 SrS:CuCl 형광체를 6000 ~ 8000 ${\AA}$ 두께로 증착 시킨 후, 800 $^{\circ}C$에서 3분 동안 열처리하여 TFEL 소자를 제작시켰다. 형광체 결정은 열처리 온도 및 열처리 지속 시간의 증가에 따라 향상되었다. SrS:CuCl TFEL 소자는 468 nm 와 500 nm에서 발광 피크 파장을 나타내었고, CIE 색 좌표는 x = 0.21, y = 0.33로 청색 빛이 방출되었다. SrS:CuCl TFEL 소자의 휘도$(L_{40})$는 형광체 증착 중의 황 압력에 크게 의존하여 황 압력을 $8{\times}10^{-6}$ torr에서 $2{\tiems}10^{-5}$ torr로 증가시켰을 때 262 cd/$m^2$에서 728 cd/$m^2$로 증가되었다.

• Nutrition Research and Practice
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• 제9권3호
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• pp.319-327
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• 2015

BACKGROUND/OBJECTIVES: In nutritional epidemiology, collecting self-reported respondent height and weight is a simpler procedure of data collection than taking measurements. The aim of this study was to compare self-reported and measured height and weight and to evaluate the possibility of using self-reported estimates in the assessment of nutritional status of elderly Poles aged 65 + years. SUBJECTS/METHODS: The research was carried out in elderly Poles aged 65 + years. Respondents were chosen using a quota sampling. The total sample numbered 394 participants and the sub-sample involved 102 participants. Self-reported weight (non-corrected self-reported weight; non-cSrW) and height estimates (non-corrected self-reported height; non-cSrH) were collected. The measurements of weight (measured weight; mW) and height (measured height; mH) were taken. Using multiple regression equations, the corrected self-reported weight (cSrW) and height (cSrH) estimates were calculated. RESULTS: Non-cSrH was higher than mH in men on average by 2.4 cm and in women on average by 2.3 cm. In comparison to mW, non-cSrW was higher in men on average by 0.7 kg, while in women no significant difference was found (mean difference of 0.4 kg). In comparison to mBMI, non-cSrBMI was lower on average by $0.6kg/m^2$ in men and $0.7kg/m^2$ in women. No differences were observed in overweight and obesity incidence when determined by mBMI (68% and 19%, respectively), non-cSrBMI (62% and 14%, respectively), cSrBMI (70% and 22%, respectively) and pcSrBMI (67% and 18%, respectively). CONCLUSIONS: Since the results showed that the estimated self-reported heights, weights and BMI were accurate, the assessment of overweight and obesity incidence was accurate as well. The use of self-reported height and weight in the nutritional status assessment of elderly Poles on a population level is therefore recommended. On an individual level, the use of regression equations is recommended to correct self-reported height, particularly in women.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• 한국미생물·생명공학회지
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• 제16권2호
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• pp.136-141
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• 1988

고온 발효성인 Saccharomyces cerevisiae D-71과 내삼투압성인 Zygosaccharomyces rouxii SR-S를 여러 조건에서 배양하여 Zymolyase-20T에 대한 감수성을 조사하였다. Sacch. cerevisiae D-71의 glucan과 mannan 함량은 각각 l4.5%와 14.8% 이었고 Zygosacch. rouxii SR-S는 24.0%와 19.0% 이었다. 0.5% methionine 과 0,1% glucose를 함유한 wickerham 합성배지에 Sacch. cerevisiae D-71를 배양하여 얻은 세포의 Zymolyase-20T에 대한 감수성은 66% 이었고 $K_2$HPO$_4$와 aminobenzoic acid를 결핍시켰을 때 감수성이 가장 낮았다. 또한 0.5% peptone과 o.15% methionine 및 0.1% glucose를 함유한 wickerham 합성배지에 Zygosacch. rouxii SR-S를 배양하여 얻은 세포의 감수성은 80% 이었고 KI와 pyridoxine을 결핍시켰을 때 감수성이 가장 낮았다. $25^{\circ}C$에서 YMPG 배지에 Sacch. cerevisiae D-71를 접종하여 12시간 정치배양한 세포의 Zymolyase-20T에 대한 감수성은 76% 이었고 Zygosacch. reuxii SR-S를 같은 조건으로 30시간 배양한 세포의 감수성은 82%로서 wickerham 합성배지에서의 감수성보다 더 좋았다.

• Journal of Magnetics
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• 제7권1호
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• pp.18-20
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• 2002

The charge structures of (LSMO) and of the combined system $(La_{ 0.6}Sr_{0.4}FeO_3$(LSMO) and of the combined system (La_{0.6}Sr_{0.4}MnO_3)_{0.7}(La_{0.6}Sr_{0.4}/FeO_3)_{0.3}$are investigated by using M$\ddot{o}$ssbauer spectroscopy. The antiferromagnetically ordered $(La_{0.6}Sr_{0.4}FeO_3$(LSFO) has possible charges of Fe^{3+} and Fe^{4+}$, which include a low-spin $Fe^{4+}$ state at and above 230 K. The temperature dependences of the M$\ddot{o}$ssbauer spectra for the $(La_{ 0.6}Sr_{0.4}FeO_3$ system and for the combined $(LSMO)_{ 0.7}(LSFO)_{0.3}$ system are fitted as three sets of Zeeman patterns corresponding to $Fe^{3+}$ and $Fe^{4+} below 230 K. At and above 230 K, the fitted M$\ddot{o}$ssbauer spectra for the combined system are the same in all temperature ranges. Above 230 K, $(La_{0.6}Sr_{0.4}FeO_3$ spectrum consists of two sets of six Lorentzians for $Fe^{3+}$ and one line for low spin $Fe^{4+}$. It is worth noting that large fields are induced in the combined system.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.579-585
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• 2006

We fabricated BSCCO-2212 (2212) rod by the melt casting process (MCP) and evaluated the effect of the melt flowing on the critical current ($I_c$) by using vertical and tilt casting. It was observed that the $2212-SrSO_4$ rod processed by the tilt casting method with homogeneous pre-heating temperature of the mold had a higher $I_c$ than that processed by the vertical casting method. We also evaluated the influence of the strontium sulfates ($SrSO_4$) addition on the texture, microstructure, critical current and temperature, and mechanical hardness of the $2212-SrSO_4$ rods. It was observed that the addition of $SrSO_4$ improved the critical current ($I_c$) and mechanical hardness of the 2212. The $I_c$ of the 2212 increased as the $SrSO_4$ content increased and reached a peak value (260 A at 77 K) at an $SrSO_4$ content of 6 wt.%. In addition, the addition of $SrSO_4$ had a beneficial effect on the mechanical hardness of the 2212. We studied the possible cause of the variation in the $I_c$ with the melt flowing and the $SrSO_4$ content based on the XRD, EPMA analysis and the microstructural observation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.226-231
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• 2001

The $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1250^{\circ}C{\sim}1350^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics. The dielectric constant( ${\epsilon}_r$) was increased with addition of $SrTiO_3$. The temperature coefficient of resonant frequency( ${\tau}_f$) was gradually varied from negative value to the positive value with increasing the $SrTiO_3$. The temperature coefficient of resonant frequency of the $Mg_{1-x}Sr_xTiO_3(x=0.036)$ ceramics was near zero, where the dielectric constant, quality factor, and ${\tau}_f$ were 20.65, 95120 and +1.3ppm/$^{\circ}C$, respectively.