• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.136-136
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• 2006

• Journal of Magnetics
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• 제13권3호
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• pp.81-84
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• 2008

Spin injection and detection in lateral spin valves with double nonmagnetic bottom electrodes are investigated theoretically. Spin-polarized current injected from a magnetic electrode is split to two bottom electrodes, and nonlocal spin signals between the other magnetic electrode and the nonmagnetic electrodes are calculated from drift-diffusion equations. It is shown that the spin signal is approximately proportional to the associated current in the electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.394-394
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• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• 한국자기공명학회논문지
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• 제23권2호
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• pp.46-50
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• 2019

Spin orbit torque would be applied as the next generation of MRAM, so many researchers are interested in related field. To make a more efficient device, electric current should convert into spin current with high efficiency. Moreover, it becomes important to measure efficiency of spin orbit torque accurately. We measured spin torque FMR of W/CoFeB hetero structure system with direct current. The efficiencies of the damping like torque and field like torque were measured by using the linewidth and on-resonance field proportional to direct current. In addition, we analyzed that a quadratic shift of the on-response field was caused by the Joule heating.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.15-16
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• 2010

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.118-119
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• 2010

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• 한국항공우주학회지
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• 제34권2호
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• pp.36-47
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• 2006

인공위성에서 자세획득을 위해 기동을 하거나 이상상태 발생으로 위성이 임무를 수행하지 못하여 결국에 위성을 잃어버리게 되는 Flat Spin 상태에서 자세를 복구하는 방안인 Dual Spin Turn의 원리에 대한 연구가 수행되었다. Dual Spin Turn 현상에서 중요한 모멘텀 전달 원리를 물리적으로 명확하게 설명하였다. 그리고 기존의 연구결과에서 많이 알려진 방법을 포함하여 일반적인 위성의 관성모멘트 조건과 모멘텀 휠의 회전 방향 등을 여러 가지로 변화시켜 보면서 타당성을 검증하였다. Dual Spin Turn 과정은 개루프 제어와 에너지 감쇄장치의 도입이라는 2단계 제어방법을 이용하여 여러 경우에 대해 시뮬레이션으로 분석해보았다. 또한 제어의 타당성을 입증하기 위해 2단계 제어 이후의 안정성에 대해 검증하였다. 그리고 Dual Spin Turn을 이용하여 Flat Spin Recovery를 수행하는 시나리오를 예제로 제시하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.112-113
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• 2010

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.107-108
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• 2015