• Korean Journal of Pharmacognosy
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• v.40 no.4
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• pp.286-288
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• 2009

'SogDan(續斷)' is one of the crude drugs used mainly as a tonic and analgesic. The botanical origin of the crude drug has never been studied pharmacognostically. To clarify the botanical origin of SogDan from Korea, the anatomical characteristics of Phlomis umbrosa Turcz. and Phlomis koraiensis Nakai were studied. As a result, it was clarified that SogDan from Korea was the root of Phlomis umbrosa.

• Biomedical Science Letters
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• v.12 no.4
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• pp.343-348
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• 2006

Drosophila Sog and vertebrate Noggin play important roles during development. They function as antagonists against BMP4 signaling and induce neural ectoderm during embryogenesis. They are also engaged in appendage formation by inhibiting BMP4 signaling during late development. To understand further functions of Sog, Supersog, which is a more potent form of Sog, and Noggin BMP4 antagonists during development, I performed the molecular genetic analysis using Drosophila embryogenesis and wing formation as assay systems. In cellular blastoderm embryos, Sog inhibited Dpp signaling, Drosophila BMP4 signaling, whereas Supersog or Noggin did not block Dpp signaling. During wing formation, Sog inhibited Sax type I receptor of Dpp signaling whereas Noggin inhibited Tkv type I receptor of Dpp signaling. However, Supersog inhibited both Sax and Tkv type I receptors. These results suggest that functions of BMP4 antagonists are developmental stage dependent and indicate that each BMP4 antagonist inhibits BMP4 signaling by blocking different BMP4 receptors.

• BMB Reports
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• v.49 no.10
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• pp.572-577
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• 2016

The short gastrulation (sog) shadow enhancer directs early and late sog expression in the neurogenic ectoderm and the ventral midline of the developing Drosophila embryo, respectively. Here, evidence is presented that the sog primary enhancer also has both activities, with the late enhancer activity dependent on the early activity. Computational analyses showed that the sog primary enhancer contains five Dorsal (Dl)-, four Zelda (Zld)-, three Bicoid (Bcd)-, and no Single-minded (Sim)-binding sites. In contrast to many ventral midline enhancers, the primary enhancer can direct lacZ expression in the ventral midline as well as in the neurogenic ectoderm without a canonical Simbinding site. Intriguingly, the impaired transcriptional synergy between Dl and either Zld or Bcd led to aberrant and abolished lacZ expression in the neurogenic ectoderm and in the ventral midline, respectively. These findings suggest that the two enhancer activities of the sog primary enhancer are functionally consolidated and geographically inseparable.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.198-205
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• 1992

Abstract-Planarieation technology, which is essential to VLSI, has been developed using non-etch back Spin- On-Glass (SOG). Process factors for 1.5 micron double metal technology are optimized by the statistical design of experiments. Optimum conditions are found to be a process with twice SOG coating, sufficiently long hot plate baking at 300t, and furnace curing for 40 minutes below 400$^{\circ}$C.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.53-61
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• 1994

Intermetallic dielectric layer was formed by using SiO$_2$/SOG/SiO$_2$ for aluminum based dual-metal interconnection process and its electric characteristics were evaluated. The dielectric layer was in the cost and facility point of view more useful than the insulator that was formed by etch-back process. The planarity by using SOG process was about 40% higher than that of the insulator by the CVD process. When SiO$_2$ films were deposited by the PECVD process the Al hillock formation during the next process was restrained bucause the intermetalic insulator was made at low temperature. The leakage current was 1${\times}10^{7}~1{\times}10^{-8}A/cm^{2}$ at the electric field of 10$^{5}$V/cm and breakdown filed was 4.5${\times}10^{6}~7{\times}10^{6}A/cm$. So we had confirmed that siloxane SOG was very useful for intermetallic layer material.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.6
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• pp.423-427
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• 2017

In this paper, an anchor design that improves bonding strength uniformity in the silicon-on-glass (SOG) process is presented. The SOG process is widely used in conjunction with electrode-patterned glass substrates as a standard fabrication process for forming high-aspect-ratio movable silicon microstructures in various types of sensors, including inertial and resonant sensors. In the proposed anchor design, a trench separates the silicon-bonded area and the electrode contact area to prevent irregular bonding caused by the protrusion of the electrode layer beyond the glass surface. This technique can be conveniently adopted to almost all devices fabricated by the SOG process without the necessity of additional processes.

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.430-435
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• 2004

The resolution of the accelerometer, fabricated with MEMS technology is mainly affected by mechanical and electrical noise. To reduce mechanical noise, we have to increase mass of the structure part and quality factor related with the degree of vacuum packaging. On the other hand, to increase mass of the structure part, the thickness of the structure must be increased and ICP-RIE is used to fabricate the high aspect ratio structure. At this time, footing effect make the sensitivity of the accelerometer decreasing. This paper presents a hybrid SOG(Silicon On Glass) Process to fabricate a lateral silicon accelerometer with differential capacitance sensing scheme which has been designed and simulated. Using hybrid SOG Process, we could make it a real to increase the structural thickness and to prevent the footing effect by deposition of metal layer at the bottom of the structure. Moreover, we bonded glass wafer to structure wafer anodically, so we could realize the vacuum packaging at wafer level. Through this way, we could have an idea of controlling of quality factor.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.412-414
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• 2004

We have developed nucleation control methods applicable to a zone-melting recrystallization excimer laser annealing process for poly-Si films. Ribbon-shaped Si grains of 2 ${\mu}m$-width were successfully aligned side by side by means of a comb-shaped beam, and we have successfully fabricated TFTs with channels formed in those grains. Electron mobility in the TFTs is as high as 677-$cm^2$/Vs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• Proceedings of the Korean Information Science Society Conference
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• 2001.04b
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• pp.334-336
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• 2001

세선화 알고리즘의 간접 기법으로 제시된 자기구성 특징 그래프(Self-Organizing feature Graph : SOG) 기법은 안정된 세선화 결과를 가지는 장점이 있으나 학습 알고리즘에서 전체 노드를 재정돈하는 과정이 내포되어 있다. 본 본문에서는 학습 알고리즘의 재정돈 과정을 대신하는 점증적 정돈기법을 제안하고 이 기법을 세선화 알고리즘에 결합하여 실험하고 분석하였다. 제안된 알고리즘은 기존의 SO를 적용한 결과와 같은 우수한 세선화 결과를 얻으며 학습시간은 O((logM)$^3$)인 복잡도를 가진다.