• Korean Journal of Veterinary Research
• /
• v.38 no.4
• /
• pp.818-822
• /
• 1998

The persistence of porcine epidemic diarrhea virus(PEDV) infection was demonstrated in 7 swine farms employing continuous pig flow management even after seasonal outbreaks. Clinically, sporadic postweaning diarrhea was a major concern in those farms. Subsequently circulatory antibody detection using serum neutralizing test made useful for confirmation of PEDV persistent infections. The persistence of PEDV in the premise might have induced recurrence over the period of time.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.2
• /
• pp.6-9
• /
• 2002

Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.398-401
• /
• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of $T/R_{sh}$ and $T^{10}/R_{sh}$ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and $8.95({\times}10^{-3}\Omega^{-1})$ respectively.

• Proceedings of the Korea Contents Association Conference
• /
• 2014.11a
• /
• pp.37-38
• /
• 2014

최근 SNS의 발전으로 인해 데이터의 양이 급격히 증가하였으며, 이에 따라 빅데이터 처리를 위한 분산 DBMS 기반 질의 처리 연구가 활발히 진행되고 있다. 이를 위해 CUBRID는 CUBRID Shard 서비스를 통해 데이터베이스를 shard 단위로 수평 분할하여 각기 다른 물리 노드에 데이터를 분산 저장하도록 지원한다. 그러나 CUBRID Shard는 shard간 데이터가 독립적으로 관리되기 때문에 세타 조인 및 중첩 질의와 같이 다수 서버에서의 테이블 참조가 필요한 질의는 처리가 불가능하다. 따라서 본 논문에서는 분산 CUBRID 상에서 세타 조인 및 중첩 SQL를 지원하는 질의 재구성 기법을 제안한다.

• Journal of the Korea Safety Management & Science
• /
• v.15 no.2
• /
• pp.31-38
• /
• 2013

As people make efforts on accident prevention, the number of accidents has decreased over the years, however the number of fatal major industry accidents has rather increased, which resulted in the increase of the number of deaths in total. Under these conditions, there is an attempt to introduce and perform the safety vocational education system as a means for preventing major industry accidents. Therefore, in this paper, we analyse vocational education of manufacturing industry from the safety's point of view and suggest the efficient techniques measuring and managing each safety management. Proposed techniques show that the specification on safety determines weight through the managers of firms and each process is suggested by using SN ratio.

• Journal of Ocean Engineering and Technology
• /
• v.15 no.2
• /
• pp.33-38
• /
• 2001

The subsidence characteristics of artificial reef (AFR) in the unsteady flow such as tidal flow were investigated. The scour and subsidence characteristics were confirmed in the steady flow field. In a main study, the interaction of "Flow - Sediment Movement - Structure Behavior" and scou $r_sidence mechanism were discussed int he unsteady flow field. AFR subsidence characteristics was discussed with Reynolds number(Re*), Shields number(Sn*), dimensionless acceleration of flow (af/g) and dimensionless time (t/T). Most of all, the continuous AFR subsidence from the scour was occurred by periodic behavior of AFR. This behavior is result from the asymmetric ground, and is influenced by maximum velocity, duration time and direction of flow.ow.

• Journal of Information Processing Systems
• /
• v.7 no.1
• /
• pp.63-74
• /
• 2011

As a powerful and flexible processor, the Graphic Processing Unit (GPU) can offer a great faculty in solving many high-performance computing applications. Sweep3D, which simulates a single group time-independent discrete ordinates (Sn) neutron transport deterministically on 3D Cartesian geometry space, represents the key part of a real ASCI application. The wavefront process for parallel computation in Sweep3D limits the concurrent threads on the GPU. In this paper, we present multi-dimensional optimization methods for Sweep3D, which can be efficiently implemented on the finegrained parallel architecture of the GPU. Our results show that the overall performance of Sweep3D on the CPU-GPU hybrid platform can be improved up to 4.38 times as compared to the CPU-based implementation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.398-401
• /
• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.

• Journal of the Korean Ceramic Society
• /
• v.38 no.1
• /
• pp.100-105
• /
• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.1
• /
• pp.55-57
• /
• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.