• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• Journal of Electrical Engineering and Technology
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• 제7권4호
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• pp.596-600
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• 2012

ZnO-$SnO_2$ films were deposited by rf magnetron sputtering using a ZnO-$SnO_2$ (2:1 molar ratio) target. The target was made from a mixture of ZnO and $SnO_2$ powders calcined at $800^{\circ}C$. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon ($O_2$:Ar) was varied from 0% to 10%, and the substrate temperature was varied from $27^{\circ}C$ to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-$SnO_2$ films deposited in $O_2$:Ar = 10% exhibited resistivity higher than $10^6{\Omega}cm$ and transmittance of more than 80% in the visible range.

• 품질경영학회지
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• 제22권4호
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• pp.1-12
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• 1994

각각의 설계인자들의 실험조건에서 얻어지는 특성치들의 분산은 평균에 영향을 받는다. 많은 경우에 평균이 커짐에 따라서 분산이 커지는 경향이 있다. 다구찌가 산포제어인자를 찾기 위해서 제시한 SN 비인 $(SN)_i$ = 10 log ($\bar{y}_{i}^{2}/s_{i}^{2}$) 은 분산이 평균의 제곱에 비례하여 커지는 경우이다. 그런데 분산이 평균의 제곱보다 더 느리게 또는 더 빠르게 커질 수도 있기 때문에 이 논문에서는 간단한 자료분석적 기법에 의해서 그 관계를 추측하여, 합당한 SN 비를 사용할 것을 제시하였고, 평균조정인자를 찾기위한 통계량인 감도 $(S)_i$ 의 통계적 성질들을 논의하였다.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.445-448
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• 2016

Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: $7{\mu}s$ and rise time: $13{\mu}s$) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.641-646
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• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2007년 추계학술발표대회 개요집
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• pp.235-237
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• 2007

In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

• 대한치과교정학회지
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• 제15권2호
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• pp.239-247
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• 1985

The author compared patients with extreme variations in MP-SN angle with normal group in order to examine the relationship between the MP-SN angle and other skeletal and dental parameters. The results were as follows; 1. The OP-SN angle and OP-MP angle decreased as the MP-SN angle decreased. 2. As the MP-SN angle decreased, the skeletal and dental components became more anteriorly situated. 3. In high MP-SN group, TFH, UFH, LFH, OP-MP, ADH increased more than those in average MP-SN group. 4. The RH/TFH ratio decreased as the MP-SN increased.

• 천문학회보
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• 제39권1호
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• pp.59.1-59.1
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• 2014

Phosphorus ($^{31}P$), which is essential for life, is thought to be synthesized in massive stars and dispersed into interstellar space when these stars explode as supernovae (SNe). Here we report on near-infrared spectroscopic observations of the young SN remnant Cassiopeia A, which show that the abundance ratio of phosphorus to the major nucleosynthetic product iron ($^{56}Fe$) in SN material is up to 100 times the average ratio of the Milky Way, confirming that phosphorus is produced in SNe. The observed range is compatible with predictions from SN nucleosynthetic models but not with the scenario in which the chemical elements in the inner SN layers are completely mixed by hydrodynamic instabilities during the explosion.