• 공업화학
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• 제21권5호
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• pp.537-541
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• 2010

금속물질의 분산도를 높여주기 위해 열처리와 산처리를 수행한 carbon black에 다양한 비율의 Pt와 Sn을 담지 시킨 촉매를 환원법을 이용하여 합성하였다. Pt/Sn의 비율은 전구체 용액 내에서 상대적인 농도를 변화시켜 조절하였으며, Pt/Sn 비율에 따른 반응 특성을 조사하였다. XRD (X-ray Diffraction) 분석을 통해 합성된 촉매의 결정도를 확인하였고, XPS (X-ray Photoelectron Spectroscopy) 분석으로 Pt와 Sn의 산화가를 확인하였다. 합성된 촉매의 조성과 구조를 분석하기 위해 SEM (Scanning Electron Microscopy)-EDS (Energy Dispersive Spectroscopy) 분석과 TEM (Transmission Electron Microscopy) 분석을 수행하였다. 산소 환원 반응 특성은 0.5 M $H_2SO_4$ 수용액에서 RDE (Rotating Disk Electrode)를 이용하여 조사하였으며, 산소환원 촉매활성은 Pt/Sn의 비율에 크게 의존함을 확인하였다. 합성한 전극의 메탄올 산화반응은 전기화학분석장치(Potentiostat ; Princeton applied research, VSP)를 이용하여 0.5 M $CH_3OH$와 0.5 M $H_2SO_4$의 혼합수 용액에서 수행하였다. 메탄올 산화에 대한 전기화학적 촉매활성과 안정성을 평가한 결과 적절한 양의 Sn을 첨가한 촉매가 높은 촉매활성과 안정성을 나타냄을 확인하였다.

• 한국결정성장학회지
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• 제31권4호
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• pp.154-158
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• 2021

550 nm 파장대에서 O₂/Ar+O₂ 혼합기체 농도비가 0에서 7.9 %로 변화 시 Mn 도핑된 SnO₂ 투명전도막의 투과율은 80.9에서 85.4 %로 밴드갭 에너지는 3.0에서 3.6 eV로 증가하였다. 비저항은 O₂/Ar+O₂ 혼합기체 농도비가 0에서 2.7 %까지 증가 시 3.21 Ω·cm에서 0.03 Ω·cm으로 감소하다 이후 7.9 %로 증가 시에는, 52.0 Ω·cm으로 급격하게 상승하였다. XPS 분석결과 혼합기체 O₂/Ar+O₂에서 O₂ 농도의 증가로 Sn_3d5/2의 결합에너지가 486.40에서 486.58 eV로, O_1s의 결합에너지도 530.20에서 530.34 eV로 조금 변화하였다. 따라서 스파터링 방법으로 제조한 Mn 도핑된 SnO₂ 투명전도막에서 O₂ 농도변화에 따라 SnO와 SnO₂ 2개의 상이 공존하는 것을 확인하였다.

• 한국세라믹학회지
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• 제23권1호
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• pp.7-12
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• 1986

Dielectric properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ were investigated from x=0 to 0.20, and temperature range -4$0^{\circ}C$~13$0^{\circ}C$ Density and grain size decreased with increasing Sn content due to grain growth inhibitor. Dielectric constant below the Curie temperature increased with increasing Sn content and dissipation factor dec reased. These results are due to grain size effect and internal stress. Curie temperature was shifted to lower temperature with increasing ratio of total polarizability to volume resulting from substitution of $Ba^{2+}$ ion with $Ca^{2+}$ ion $Ti^{4+}$ ion with $Sn^{4+}$ ion.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• 한국세라믹학회지
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• 제46권3호
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• pp.271-274
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• 2009

Redox investigation of Sn and S ion was attempted in alkaline earth borosilicate glass melts with only 1 mol% $Na_2O$ by means of Square Wave Voltammetry (SWV). According to voltammograms, there was only one peak due to $Sn^{4+}/Sn^{2+}$ in melt doped with $SnO_2$. The calculated standard enthalpy and entropy of the reduction of $Sn^{4+}$ to $Sn^{2+}$ were 116kJ/mole and 62 J/mol K, respectively. The determined redox ratio, [$Sn^{2+}$] / [$Sn^{4+}$] in the temperature range of $1300{\sim}1600^{\circ}C$ was in $0.4{\sim}2.1$. On the contrary, in the voltammogram of melt doped with $BaSO_4$ there was no peak due to $S^{4+}/S^o$ but shoulder that might be attributed to the adsorption of sulfur at the electrode. The absence of the peak related with $S^{4+}/S^o$ was discussed from the view-point of the thermal decomposition behavior of $BaSO_4$ in the glass batch.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• 품질경영학회지
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• 제27권3호
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• pp.67-78
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• 1999

In parameter design introduced by Taguchi, we analyze a performance measure, so called SN ratio. The SN ratio is a function of the expected loss due to the variation of quality characteristic. In this paper, an easy way for developing performance measures is presented, which can be used to control several quality characteristics simultaneously in parameter design. To develop such multivariate performance measures, the transformation method of the expected loss and combining techniques are employed. And the analysis of real empirical data for an application of the proposed method is also presented.

• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• 통합자연과학논문집
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• 제13권3호
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• pp.92-96
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• 2020

Taguchi's robust parameter design is an approach to reduce the performance variation of quality characteristics in products and processes. In robust design, the signal-to-noise ratio (SN ratio) was used to find the optimum condition to minimize the variation of quality characteristics as much as possible and bring the average of quality characteristics closer to the target value. In this paper, we propose a simultaneous optimization method based on a linear model of the SN ratio as a method to find the optimal condition of the control factor in case of multi-characteristics. In addition, the proposed method and the existing method were compared and studied by taking actual cases.

• 한국주조공학회지
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• 제12권4호
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• pp.317-325
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• 1992

Diamond is the hardest material known to humans, also possesses the highest thermal conductivity and a very low thermal expansion coefficient. Therefore, these properties of diamond make them logical choices for many difficult grinding application. Bonding material is a very important factor to performance of a grinding wheel. Grinding glass constitutes one of the major application areas of diamond grinding wheels, and Cu-Sn tin bronze matrix is widely used as a metal bond of diamond wheel in grinding glass but these studies are rarely reported. The bronze test pieces excluding diamond are sintered by the method of hot sizing respectively at $600^{\circ}C$, $650^{\circ}C$, $700^{\circ}C$, with a composition(Cu-10wt%Sn) on ${\alpha}$ phase and two compositions(Cu-20wt%Sn and Cu-23wt%Sn) on ${\alpha}+{\beta}$ phase. The rupture strength of Cu-10wt%Sn is highest. The bronze bonded diamond wheels are manufactured by same conditions as the bronze test pieces. The results of grinding ratio of wheels are highest in case of Cu-10wt%Sn bonded wheel sintered at $650^{\circ}C$ and grinding power is highest in same composition sintered at $700^{\circ}C$.