• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.133-137
• /
• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

• Journal of the Korean Ceramic Society
• /
• v.27 no.5
• /
• pp.638-644
• /
• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.3
• /
• pp.31-36
• /
• 2012

In this study, the complex vibration reliability of Sn-3.5Ag and Sn-0.7Cu having a high melting temperature was investigated. For manufacturing of BGA test samples, Sn-3.5Ag and Sn-0.7Cu balls were joined on BGA chips finished by ENIG and the chips were mounted on PCB finished OSP by using reflow process. For measuring of resistance change during complex vibration test, daisy chain was formed in the test board. From the results of resistance change and shear strength change, the reliability of two solder balls was compared and evaluated. During complex vibration for 120 hours, Sn-0.7Cu solder was more stable than Sn-3.5Ag solder in complex vibration test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.198-198
• /
• 2006

Tin doped $In_2O_3$ sputtering target is widely used to produce a various kinds of flat panel display because of high transmittance in visible region and high electrical conductivity. In2O3 and SnO2 powders were prepared by a homogeneous precipitation method using metal source, respectively, the calcining and sintering behavior of the indium-tin oxide(In2O3-SnO2) composite powders were studied. The tin oxide(SnO2) dispersion condition in ITO sputtering target was improved by increasing calcining temperature. And the tin oxide dispersion was also improved by reducing the tin oxide contents in the ITO target from 30 to 5wt%. SnO2 dispersion and densification of ITO target is very difficult to control due to sublimation of SnO2 at over 1150C.

• Korean Journal of Materials Research
• /
• v.18 no.7
• /
• pp.373-378
• /
• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.9
• /
• pp.1641-1647
• /
• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Applied Chemistry for Engineering
• /
• v.5 no.3
• /
• pp.517-523
• /
• 1994

The effects of cure kinetics and mechanism of DGEBA(diglycidyl ether of bisphenol A)/MDA(4,4'-methylene dianiline) with SN(succinonitrile) and HQ(hydroquinone) as an additive and accelerator were investigated. Cure kinetics was evaluated by Kissinger equation and fractional-life method through DSC analysis. The activation energy has hydroxyl group as an accelerator, the activation energy and the starting cure-temperature were lower than those of DGEBA/MDA/SN system. Cure mechanism of those systems was investigated through FT-IR according to the various SN contents. The ratio was SN : HQ = 4 : 1. It has been known that the cure reactions of an epoxy-diamine system are composed of primary amine-epoxy reaction, secondary amino-epoxy reaction and epoxy-hydroxyl group reaction. But in DGEBA/MDA/SN system, primary amino-CN group reaction and CN group-hydroxyl group reaction were added to the above mentioned reactions. These reactions attributed to the long main chain and the low crossliking density. And in DGEBA/MDA/SN/HQ system, hydroxyl group of HQ formed a transition state with epoxide group and amime group and also opened the ring of the epoxide group rapidly, then amino-epoxy reaction took place easily.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.6
• /
• pp.245-250
• /
• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.

• Applied Chemistry for Engineering
• /
• v.8 no.2
• /
• pp.332-338
• /
• 1997

$SnO_2$ as raw material of sensor for $NO_2$ detection was prepared by precipitating $SnCl_4$ solution with aqueous ammonia followed by calcining in air. The characterization of $SnO_2$ was carried out using FT-IR and XRD, and $SnO_2$ thick film sensor was fabricated by screen-printing method. The particle size of $SnO_2$ calcined at higher temperature increased due to the growth of crystalline. $SnO_2$ sensor fabricated by using $SnO_2$ sample calcined at $1000^{\circ}C$ followed by heat treatment at $700^{\circ}C$ exhibited excellent sensing characteristics and selectivity for $NO_2$ gas at the operating temperature of $250^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.2
• /
• pp.35-39
• /
• 2012

We studied interfacial reaction and bonding characteristics of a flip chip bonding with the viewpoint of formation behavior of intermetallic compounds. For this purpose, Sn-0.7Cu and Sn-3Cu solders were reflowed on the Al/Cu and Al/Ni UBMs. When Sn-0.7Cu was reflowed on the Al/Cu UBM, no intermetallic compounds were formed at the solder/UBM interface. The $Cu_6Sn_5$ intermetallic compounds formed by reflowing Sn-3Cu solder on the Al/Cu UBM were spalled from the interface, resulting in delamination of the solder/UBM interface. On the other hand, the $(Cu,Ni)_6Sn_5$ intermetallic compounds were formed by reflowing of Sn-0.7Cu and Sn-3Cu on the Al/Ni UBM and the interfacial bonding between the Sn-Cu solders and the Al/Ni UBM was kept stable.