• Journal of the Korean Chemical Society
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• v.38 no.3
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• pp.241-245
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• 1994

The oxidative addition reaction has been employed to synthesize heteropolynuclear compounds containing Si-M bonding interaction between the silicon atom of silatrane, pentacoordinate silicon derivative with transannular Si-N dative bond, and the main group element. The reaction of $SnBr_2 with 1-bromosilatrane(1a) in acetonitrile gives the mixture of yellow(2a) and white(2b) solids which were isolated and charaterized by ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR and Mass spectroscopy. The yellow compound was characterized as 1-tribromotinsilatrane which had Si-Sn bonding interaction. The reaction of SnBr2 with 1-bromo-3,7,10-trimethylsilatrane(1b) in methanol gives the Sn(Ⅳ) complex, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3),$ which was characterized by various means.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.325-328
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• 2010

Varying quantities of a high-thermal-expansion glass, 50CaO-20ZnO-$20B_2O_3-10SiO_2$ (CZBS), were added to alumina and sintered at $875^{\circ}C$ for 2 h for low temperature co-firing ceramic (LTCC) applications. As the amount of glass addition increased from 40 wt% to 70 wt%, the apparent density of the sintered product increased from 88.8% to 91.5%, which was also qualitatively confirmed by microstructural observation. When the glass addition was very high, e.g., 70 wt%, an apparent formation of secondary phases such as $CaZn_2AlZnSiAlO_7$, $Ca_2Al(AlSi)O_7$, $Ca_2Al_2SiO_7$, $Ca_2ZnSi_2O_7$ and ZnO, was observed. Both the dielectric constant and the coefficient of thermal expansion increased with the glass addition, which was qualitatively consistent with the analytical models, while the experimental values were lower than the predicted ones due to the presence of pores and secondary phases.

• Nuclear Engineering and Technology
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• v.46 no.2
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• pp.147-158
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• 2014

In order to investigate how the microstructure of fuel/matrix-interaction (FMI) layers change during irradiation, different U-7Mo dispersion fuel plates have been irradiated to high fission density and then characterized using scanning electron microscopy (SEM). Specifially, samples from irradiated U-7Mo dispersion fuel elements with pure Al, Al-2Si and AA4043 (~4.5 wt.%Si) matrices were SEM characterized using polished samples and samples that were prepared with a focused ion beam (FIB). Features not observable for the polished samples could be captured in SEM images taken of the FIB samples. For the Al matrix sample, a relatively large FMI layer develops, with enrichment of Xe at the FMI layer/Al matrix interface and evidence of debonding. Overall, a significant penetration of Si from the FMI layer into the U-7Mo fuel was observed for samples with Si in the Al matrix, which resulted in a change of the size (larger) and shape (round) of the fission gas bubbles. Additionally, solid fission product phases were observed to nucleate and grow within these bubbles. These changes in the localized regions of the microstructure of the U-7Mo may contribute to changes observed in the macroscopic swelling of fuel plates with Al-Si matrices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.1A
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• pp.85-90
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• 2008

Effects of the emitter degeneration on linearity have been investigated in SiGe HBT double-balanced up-converters with the Gilbert-cell structure. The emitter-coupled degeneration resistors have been optimized for high P1-dB and IP3 through the nonlinear harmonic-balance simulation. Two types of up-converter MMICs fabricated in $0.35{\mu}m$ Si-BiCMOS process were measured to verify the simulation results. The up-converter without the degeneration resistors produces a P1-dB of -13 dBm with an OIP3 of 3.7 dBm, while the up-converter with the degeneration resistors produces a P1-dB of -10 dBm with an OIP3 of 8.7 dBm.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.3
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• pp.209-212
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• 2002

The change of surface structures for the deposition of Sn, In on clean Si(111) surface is investigated as a function of surface coverage by RHEED system. For tin submonolayer films $7{\times}7$, ${\sqrt{3}}{\times}{\sqrt{3}}$ structures are observed depending on the coverage and substrate temperature. For indium submonolayer films $7{\times}7$, ${\sqrt{3}}{\times}{\sqrt{3}}$, ${\sqrt{31}}{\times}{\sqrt{31}}$, $1{\times}1$ structures are observed. We find that at substrate temperature of $500^{\circ}C$, ${\sqrt{3}}{\times}{\sqrt{3}}$ structure is formed at tin coverages of 0.2~0.4 ML and at indium coverages of 0.1~0.3 ML, respectively. From the desorption process, the desorption energies of Sn, In in ${\sqrt{3}}{\times}{\sqrt{3}}$ structure is observed to he 3.25 eV, 2.66eV, respectively.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.482-485
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• 2008

Tetragonal-$Ni_{1-x}Pd_x$Si/Si (001) structure was studied by using density functional theory (DFT). An epitaxial interface between $2{\times}2{\times}4$ (001) tetragonal-NiSi supercell and $1{\times}1{\times}2$ (001) Si supercell was first constructed by adjusting the lattice parameters of B2-NiSi structure to match those of the Si structure. We chose Ni atoms as a terminating layer of the B2-NiSi; the equilibrium gap between the tetragonal-NiSi and Si was calculated to be 1.1 ${\AA}$. The Ni atoms in the structure moved away from the original positions along the z-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The two Ni sites at the interface have 6 and 7 coordination numbers. The Ni sites with coordination number 6 at the interface were located farther away from the interface, and were more favorable for Pd substitution.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.7-9
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• 2003

Solid-state reactions in Ni/Si multilayered films (MLF) with an overall stoichiometry of $Ni_2Si$, NiSi and $NiSi_2$, induced by ion-beam mixing (IBM) and thermal annealing, were studied by using spectroscopic ellipsometry and magneto-optical spectroscopy as well as x-ray diffraction (XRD). The mixing was performed with Ar+ ions of an energy of 80 keV and a dose of $1.5 x\times10^{16}$ $Ar^+$/$\textrm{cm}^2$. It was shown that the IBM induces structural changes in the Ni/Si MLF, which cannot be detected by XRD but are confidently recognized by the optical method. A thermal annealing at 673 K of the Ni/Si MLF with an overall stoichiometry of NiSi and $NiSi_2$ causes formation of the first η -NiSi phase. The first trace for $NiSi_2$ phase on the background of NiSi one was detected by XRD after an annealing at 1073 K while, according to the optical results, $NiSi_2$ turns out be the dominant phase for the annealed Ni/Si MLF with an overall stoichiometry of $NiSi_2$.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.