• Journal of Institute of Convergence Technology
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• 제7권1호
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• pp.19-22
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• 2017

SI process is one of the most advanced thermochemical water splitting cycles enabling mass production of hydrogen without emitting carbon dioxide when coupled to nuclear heat energy. The highest temperature (close to $1000^{\circ}C$) required in SI process is well matched with the outlet temperature of a coolant circulating a high-temperature gas-cooled reactor at around $950^{\circ}C$. In Section 3, some heat exchangers are included to recover heats from process flows at high temperature. In this work, we designed a heat exchanger based on the $1Nm^3/hr$ $H_2$ production capacity using commercial tools for chemical process design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.171-174
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• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• Journal of the Korean Ceramic Society
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• 제34권7호
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• pp.774-780
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• 1997

Porous low reflective coating films of SiO2.ZrO2 system were prepared from the mixed alkoxide solutions of Zr(O-nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method using the dip-coating technique. In the case of 90SiO2.10ZrO2 porous coating films with HCl and H2O content was 0.3 mole and 4 mole, 378 m2/g of the specific surface area, 0.254 cm3/g of total pore volume, 30-50$\AA$ of average pore diameter. The transmittance of 90SiO2.10ZrO2 porous coated films was 95.38% at the wavelength of 550 nm, compared with the parent glass, the transmittance was increased with 4.38%.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제29A권9호
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Journal of the Korean Ceramic Society
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• 제44권7호
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• pp.358-361
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• 2007

Well-ordered mesoporous SiCBN ceramics have been successfully synthesized by infiltrating a polymeric precursor, which was prepared from borazine and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane via a hydroboration reaction, into a mesoporous carbon (CMK-3) as a hard template. This was followed by pyrolysis at $1400^{\circ}C$ under nitrogen gas and subsequent oxidative removal of the carbon template without chemical etching. The prepared mesoporous SiCBN ceramic was characterized by a small-angle XRD, TEM, and BET surface area. The resulting mesoporous SiCBN ceramic revealed a BET surface area of $275 m^2g^{-1}$ and a pore volume of $0.8 cm^3 g$ with no crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제16권7호
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• pp.584-592
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• 2003

6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.

• Journal of the Semiconductor & Display Technology
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• 제7권4호
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• pp.41-44
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• 2008

NiSi is less stable than the previously-used $CoSi_2$ at high temperature. Some noble metals, such as Pd and Pt, have been added to NiSi to improve its thermal stability. We employed a first principles calculation to understand the Pd segregation at the interface. An orthorhombic structure of NiSi was used to construct an orthorhombic-NiSi/Si (010). Lattice parameters along a- and c-axes in orthorhombic-NiSi were matched with those of Si for epitaxy contact. The optimized $1\times4\times1$ orthorhombic-NiSi (010) and $1\times2\times1$ Si (010) superstructures were put together to construct the orthorhombic-NiSi/Si (010), and the superstructure was relieved in calculation to minimize its total free energy. The optimized interface thickness of the superstructure was $1.59\AA$. Pd atom was substituted in Ni and Si sites located near interface. Both Ni and Si sites located at the interface were favorable for Pd substitution.

• Journal of Powder Materials
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• 제5권1호
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• pp.64-70
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• 1998

Milling media of steel and partially stabilized zirconia(PSZ) were used to produce $Mo_3$Si by mechanical alloying(MA) of Mo-25.0at%Si elemental powder mixture. The effect of milling medium materials on MA of the powder mixture have been investigated by XRD and DTA. The reaction rate and the end-product noticeably depended upon the milling medium material. The formation of $Mo_3$Si and $Mo_5Si_3$phases by PSZ ball-milling took place after 15 hr of MA and was characterized by a slow reaction rate as Mo, Si, $Mo_5Si_3$ and $Mo_3$Si coexisted for a long period of milling time. The formation of a new phase by steel ball-milling, however, did not take Place even after 96 hr of MA. DTA and annealing results showed that $Mo_5Si_3$ and $Mo_3$Si were formed after heating the ball-milled powder specimens to different temperatures. At low temperatures, Mo and Si were transformed into $Mo_5Si_3$. At high temperatures, the formation of $Mo_3$Si can be partially attributed to the reaction, 7Mo+Si+$Mo_5Si_3$-.4$Mo_3$Si . The formation of $Mo_3$Si and Mo5Si3 phases by mechanical alloying of the powder mixture and the relevant reaction rate appeared to depend upon the milling medium material as well as the thermodynamic properties of the end-products.

• Journal of Welding and Joining
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• 제33권3호
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• pp.19-24
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• 2015

Joint properties of electric control unit (ECU) module using Sn-Cu-(X)Al(Si) lead-free solder alloy were investigated for automotive electronics module. In this study, Sn-0.5Cu-0.01Al(Si) and Sn-0.5Cu-0.03Al(Si) (wt.%) lead-free alloys were fabricated as bar type by doped various weight percentages (0.01 and 0.03 wt.%) of Al(Si) alloy to Sn-0.5Cu. After fabrications of lead-free alloys, the ball-type solder alloys with a diameter of 450 um were made by rolling and punching. The melting temperatures of 0.01Al(Si) and 0.03Al(Si) were 230.2 and $230.8^{\circ}C$, respectively. To evaluation of properties of solder joint, test printed circuit board (PCB) finished with organic solderability perseveration (OSP) on Cu pad. The ball-type solders were attached to test PCB with flux and reflowed for formation of solder joint. The maximum temperature of reflow was $260^{\circ}C$ for 50s above melting temperature. And then, we measured spreadability and shear strength of two Al(Si) solder materials compared to Sn-0.7Cu solder material used in industry. And also, microstructures in solder and intermetallic compounds (IMCs) were observed. Moreover, thickness and grain size of $Cu_6Sn_5$ IMC were measured and then compared with Sn-0.7Cu. With increasing the amounts of Al(Si), the $Cu_6Sn_5$ thickness was decreased. These results show the addition of Al(Si) could suppress IMC growth and improve the reliability of solder joint.

• Journal of Welding and Joining
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• 제35권2호
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• pp.58-62
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• 2017

A319 aluminum alloy containing 6.5% Si and 3.5% Cu as major alloying elements has been widely used in machinery parts because of its excellent castability and crack resistance. However it needs more wear resistance to extend its usage to the severe wear environments. It has been known that hyper-eutectic Al-Si alloy having more than 12.6% Si contains pro-eutectic Si particles, which give better wear resistance and lubrication characteristics than hypo-eutectic Al-Si alloy like A319 alloy. In this study, it was tried to clad hyper-eutectic Al-Si alloy on the surface of A319 alloy. In the experiments, Al-36%Si alloy powder was mixed with organic binder to make a fluidic paste. The paste was screen-printed on the A319 alloy surface, melted by pulsed Nd:YAG laser and alloyed with the A319 base alloy. As experimental parameters, the average laser power was changed to 111 W, 202 W and 280 W. With increasing the average laser power, the melting depth was changed to $142{\mu}m$, $205{\mu}m$ and $245{\mu}m$, and the dilution rate to 67.2 %, 72.4 % and 75.7 %, and the Si content in the cladding layer to 16.2 %, 14.6 % and 13.7 %, respectively. The cross-section of the cladding layer showed very fine eutectic microstructure even though it was hyper-eutectic Al-Si alloy. This seems to be due to the rapid solidification of the melted spot by single laser pulse. The average hardness for the three cladding layers was HV175, which was much higher than HV96 of A319 base alloy. From the block-on-roll wear tests, A319 alloy had a wear loss of 5.8 mg, but the three cladding layers had an average wear loss of 3.5 mg, which meant that an increase of 40 % in wear resistance was obtained by laser cladding.