• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.365-369
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• 2001

플라즈마 화학증착법(PECVD)에 의해 실리콘 (100) 기판 위에 3C-SiC막을 증착하였다. 증착반응시 유입가스비, R$_{x}$[=CH$_4$/(CH$_4$+H$_2$)]에 따른 증착막의 결정성에 대해 검토하였다. 증착된 3C-SiC막의 결정성은 R$_{x}$ 값이 감소할수록 더욱 향상되었으며, 형성된 결정상은 (111) 면으로 최대의 우선배향성을 가졌다. Nanoindentation 방법을 이용하여 3C-SiC막의 압입깊이에 따른 경도 및 탄성계수를 측정하였으며, 유입가스비(R$_{x}$)의 변화에 따라서 막의 경도 및 탄성계수가 뚜렷이 변화하였다.

• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.211-217
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• 2002

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.197-201
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• 2004

SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.12
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• pp.6517-6521
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• 2012

To analyze the growth, proliferation, apoptosis, invasiveness and chemotherapy sensitivity of EC9706 cells after K-Ras gene silencing, an expression carrier pSilencer-siK-Ras was constructed, and the EC9706 cell line was transfected using a liposome technique. Six groups were established: Control, siRNA NC (transfected with empty vector pSilencer2.1); Ras siRNA (transfected with pSilencer-siK-Ras2); Paclitaxel; Paclitaxel + siRNA NC; and Ras siRNA + Paclitaxel. After the treatment, RT-PCR, Western blotting, MTT assay, flow cytometry and the Transwell technique were used to assess expression of K-Ras mRNA and protein in EC9706 cells, as well as cell growth, proliferation, apoptosis and invasiveness. The effect of Paclitaxel chemotherapy was also tested. pSilencer-siK-Ras2 effectively down-regulated expression of K-Ras mRNA and protein in EC9706 cells, growth being significantly inhibited. Flow cytometry indicated obvious apoptosis of cells in the experimental group, with arrest in the G1 phase; cell migration ability was also reduced. After pSilencer-siK-Ras2 transfection or the addition of Paclitaxel, EC9706 cells were suppressed to different extents; the suppressive effect was strengthened by combined treatment. The results suggested that RNAi-induced K-Ras gene silencing could enhance chemotherapy sensitivity of esophageal cancer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• The Journal of Korean Academy of Orthopedic Manual Physical Therapy
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• v.22 no.2
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• pp.1-7
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• 2016

Background: The purpose of this study was to investigate the effects of between modified mulligan technique and modified mulligan technique with taping on the active range of motion & passive range of motion, scapula index into the stroke patients. Methods: The subjects with stroke were randomly divided into two groups. Group 1 (n=9) was conducted modified mulligan technique and Group 2 (n=9) was conducted modified mulligan technique with taping week three times for 4weeks. Active range of motion (AROM), passive range of motion (PROM) and scapula index (SI) were measured by goniometer and tape measure. Wilcoxon signed-rank tests were used to compare differences before and after intervention. Mann-Whitney U-test were conducted to compare before to after intervention in the two groups. Results: AROM was significantly different both groups (p<.05) and between groups were not significantly different into pre and post intervention (p>.05). PROM was significantly different both groups (p<.05) however, between groups were not significantly different into pre and post intervention (p>.05). SI was significantly different only group 2 and between groups were not significantly different (p>.05). Conclusions: This study demonstrated effective bo-th modified mulligan technique and modified mulligan technique with taping on the active range of motion and passive range of motion. Because only modified mulligan technique with taping are effective on the scapula index we recommend modified mulligan technique with taping than modified mulligan technique.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.2 s.179
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• pp.146-153
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• 2006

Acceleration sensors have widely been used in the various fields of industry. In recent years, micromachining accelerometers have been developed and commercialized by the micromachining technique or MEMS technique. Typical structure of such sensors consist of a cantilever beam and a vibrating mass fabricated on Si wafers using etching. This study investigates the feasibility of powder blasting technique for microfabrication of sensor structures made of the pyrex glass alternating the existing Si based acceleration sensor. First, as preliminary experiment, effect of blasting pressure, mass flow rate of abrasive and no. of nozzle scanning on erosion depth of pyrex and soda lime glass is studied. Then the optimal blasting conditions are chosen for pyrex sensor. Structure dimensions of designed glass sensor are 2.9mm and 0.7mm for the cantilever beam length and width and 1.7mm for the side of square mass. Mask material is from aluminium sheet of 0.5mm in thickness. Machining results showed that tolerance errors of basic dimensions of glass sensor ranged from 3um in minimum to 20um in maximum. This results imply the powder blasting can be applied for micromachining of glass acceleration sensors alternating the exiting Si based sensors.