• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• 한국분말재료학회지
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• 제15권2호
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• pp.101-106
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• 2008

The objective of the present study is to investigate the increase in the functional characteristics of a substrate by the formation of a thin coating layer. Thin coating layers of $Ti_5Si_3$ have high potential because $Ti_5Si_3$ exhibits high hardness. Shock induced reaction synthesis is an attractive fabrication technique to synthesize uniform coating layer by controlling the shock wave. Ti and Si powders to form $Ti_5Si_3$ using shock induced reaction synthesis, were mixed using high-energy ball mill into small scale. The positive effect of this technique is highly functional coating layer on the substrate due to ultra fine substructure, which improves the bonding strength. These materials are in great demand as heat resisting, structural and corrosion resistant materials. Thin $Ti_5Si_3$ coating layer was successfully recovered and showed high Vickers' hardness (Hv=1183). Characterization studies on microstructure revealed a fairly uniform distribution of powders with good interfacial integrity between the powders and the substrate.

• 한국세라믹학회지
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• 제29권9호
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• pp.750-756
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• 1992

Reaction bonded si-SiC composites were prepared by silicon infiltration technique at temperature of 1$600^{\circ}C$ for 30 minutes in vaccum atmosphere. The microstructure and mechanical properties of Si-SiC composites were investigated and characterized. UF-15 and SE-10 as SiC powders, phenolic resin and carbon black as carbon source, and metallic silicon powder as molten Si source were used as starting materials. New SiC crystallines nucleatd and grown by reaction of Si and C were detected by TEM and SEM-EDS. The bonding between new and original SiC was found to be strong. But the wetting of SiC by unreacted metallic Si and the rapid grain growth of new SiC decreased density and fracture toughness. Fracture toughness and modulus of rupture of Si-SiC composite were about 3.2 MPa.m1/2 and 480 MPa, respectively.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2008년도 정기 학술대회
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• pp.156-159
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• 2008

This paper introduces a remained tensile force estimation method using SI technique based on evolutionary algorithm for externally prestressed tendon. This paper applies the differential evolutionary scheme to SI technique. A virtual model test using ABAQUS 3 dimensional frame model has been made for this work The virtual model is added to the tensile force(28.5kN). Two set of frequencies are extracted respectively from the virtual test and the self-coding FEM 2 dimension model. The estimating tendon tension for the FEM model is 28.31kN. It is that the error in the tendon tension is 1% through the differential evolutionary algorithm. The errors between virtual model and the self-coding FEM model are assumed as the model error.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.840-844
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• 2003

The main objective of this investigation is to improve the photoluminescent of $Zn_{2}SiO_{4}:Mn$ phosphors prepared by the sol-gel technique. We try to use adding a new co-dopan such as Cr and Ti. The calcination temperature of sol-gel technique(1100 $^{\circ}C$) was lower than that of the solid state reaction (1300 $^{\circ}C$). Under 147nm excitation, the maximum emission intensity was obtained when the concentration of Cr and Ti was 0.1mol% with respect to $Zn_{2}SiO_{4}:Mn$. In order to study the effect of co-dopant, the content of Mn and the ratio of water to TEOS were fixed at 2mol% and 36:1, respectively.

• 한국세라믹학회지
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• 제33권2호
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• pp.203-213
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• 1996

In this study the subcritical crack growth behavior in an Al2O3-SiCw composite has been investigated using in situ fracture technique of applied moment double cantilever beam (AMDCB) specimens indside an SEM. This technique allows the detailed observation of whisker and grain bridging in the crack wake region. The experimental results indicated that the KI-a curve was deviated from the conventional powder law form and that the existed a region where the rate of microcrack growth was decreased with increasing the externally applied stress intensity factor. This behavior could be explained by arising crack growth resistance i.e. R-curve behavior which was associated with crack shielding due to whisker and grain bridging. The R-curve was also analyzed from the KI-a curve data in order to quantify the bridging effect in the Al2O3-SiCw composite.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.141-144
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• 1997

High quality 3C-SiC epilayer was grown on Si(111) at 125$0^{\circ}C$ using chemical vapor deposition(CVD) technique by pyrolyzing tetramethylsilane(TMS). 3C-SiC epilayer was doped by tetramethylgallium(TMGa) during the CVD growth. The crystallinity of 3C-SiC was significantly enhanced by doping the gallium impurity.

• 한국진공학회지
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• 제8권1호
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• pp.51-54
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• 1999

Ar기 처리를 하면서 수소화된 비정질 실리콘(a-Si:H) 박막을 제작하였다. 연속증착할 때의 deposition rate는 1.9 /s 이었으며, Ar기 처리시간을 0.5분, 1분으로 증가시키면 2.8 $\AA$/s, 3.3 $\AA$/s 로 증가하였다. Ar기 처리시간이 2분, 3분일 때는 3.3 $\AA$/s 로 일정하였다. Ar기 처리시간을 증가시키면 광학적 밴드 갭과 박막내의 수소량이 증가하다가 약간 감소하는 경향을 보였다. Ar기 처리한 a-Si:H 박막도 Staebler-Wronski 효과를 보였으나, 연속증착된 a-Si:H 보다 광열화 현상이 많이 감소하였다. 1시간의 빛조사에 의하여 연속증착된 a-Si:H 박막의 경우, 상온에서의 전기전도도와 전기전도도 활성화에너지(Ea)는 각각 1/25배, 0.09eV 증가하였다. Ar기 처리를 한 경우, 상온에서의 전기전도도는 1/3배, Ea는 0.03eV 증가하였다. Ar기 처리를 함으로서 a-Si:H 박막의 빛에 대한 안정성을 향상시킬 수 있었으며, 안정성향상에 관한 미시적 과정을 논의하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.95-97
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• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• 한국분말재료학회지
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• 제2권3호
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• pp.238-246
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• 1995

The purpose of this study is to establish powder metallurgy (P/M) fabrication processes for high performance 2XXX Al composites reinforced with SiC whiskers. Rapidly solidified 2XXX Al powders produced by commercial atomization technique were mixed with SiC whiskers. The results of mixing processes indicated that fluidized zone mixing technique was considerably effective for the large scale production of the mixture of Al powders and whiskers. In order to consolidate these $Al-SiC_w$ mixtures into $Al-SiC_w$ composite billets, a vacuum hot press was set up, and hot processing variables were investigated. Using the hot pressing temperature of $620^{\circ}C$ under the pressure of 50 MPa, good quality $Al-SiC_w$ composite billets having relatively homogeneous microstructure and sound Al/sic interfacial bonding were obtained. Composite billets were then extruded to bars having relatively homogeneous microstructures at the extrusion temperature of 450~500$^{\circ}C$ under the extrusion pressure of 700~ 1000 MPa. Mechanical properties of the extruded bars were found to be comparable with those of the composite processed by Advanced Composite Materials Corp. To improve mechanical properties of the composites, elimination of coarse intermetallic compounds, uniform distribution of reinforcements, and minimization of whisker breakage are suggested.