• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.2 s.257
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• pp.205-210
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• 2007

SiC/SiC composites and monolithic SiC materials have been fabricated by the melt infiltration process, through the creation of crystallized SiC phase by the chemical reaction of C and Si. The reinforcing material used in this system was a braided Hi-Nicalon SiC fiber with double interphases of BN and SiC. The microstructures and the mechanical properties of RS-SiC based materials were investigated through means of SEM, TEM, EDS and three point bending test. The matrix morphology of RS-SiS/SiC composites was greatly composed of the SiC phases that the chemical composition of Si and C is different. The TEM analysis showed that the crystallized SiC phases were finely distributed in the matrix region of RS-SiC/SiC composites. RS-SiC/SiC composites also represented a good flexural strength and a high density, accompanying a pseudo failure behavior.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.37-42
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• 1992

Abstract-The ECR(E1ectron Cyclotron Resonance) plasma etcher was developed for process of manufacturing 16M164' DRAM and applied to poly-Si etching process. The etching rate and selectivity of poly-Si were investigated by changing the process factor of pressure gas and microwave power. The increasing power of microwave will have the trend of increasing the etching rate and selectivity of Oxide, and have suitable value process pressure at 6 mTorr. The increasing value of process gas SFdSF6+ Clz will cause the decrease of etching rate and selectivity, this is because the best process factor is not found.

• Aerospace Engineering and Technology
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• v.4 no.2
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• pp.192-198
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• 2005

SI(System Integration) process in KSLV-I development project is integrate whole assemblies which was submitted to system integration supervising team to one complete launch vehicle with proper quality control through test and verification and launch KSLV-I. It is not a one or a few teams' separate job but overall comprehensive job which request all related function group and manufacturing companies' voluntary cooperation. This paper was intended to provide entire SI process outline to whole related function groups and manufacturing companies for better cooperation in SI process and will be revised through continuos discussion among SI supervising group, whole function groups and manufacturing companies.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.453-458
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• 2014

SiC and its composites have been considered for use as nuclear fuel cladding materials of pressurized light water reactors. In this study, a $SiC_f$/SiC composite as a constituent layer of SiC triplex fuel cladding was fabricated using a chemical vapor infiltration (CVI) process in which tubular SiC fiber preforms were prepared using a filament winding method. To enhance the matrix density of the composite layer, winding patterns, deposition temperature, and gas input ratio were controlled. Fiber arrangement and porosity were the main parameters influencing densification behaviors. Final density of the composites decreased as the SiC fiber volume fraction increased. The CVI process was optimized to densify the tubular preforms with high fiber volume fraction at a high $H_2$/MTS ratio of 20 at $1000^{\circ}C$; in this process, surface canning of the composites was effectively retarded.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.218-226
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• 2015

The goal of this study is to investigate a metal cladding that contains SiC composites as a protective layer and analysis the characteristics of the specimens on high temperature oxidation To make SiC composites, the current process needs a high temperature (about $1100^{\circ}C$) for the infiltration of fixing materials such as SiC. To improve this situation, we need a low temperature process. In this study, we developed a low temperature process for making SiC composites on the metal layer, and we have made two kinds: cladding with protective SiC composites made by polycarbosilane(PCS), and a PCS filling method using supercritical carbon dioxide. A corrosion test at $1200^{\circ}C$ in a mixed steam and Ar atmosphere was performed on these specimens. The result show that the cladding with protective SiC composites have excellent oxidation suprression rates. This study can be said to have developed new metal cladding with enhanced durability by using SiC composite as protective films of metal cladding instead of simple coating film.

• Journal of Industrial Technology
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• v.26 no.B
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Journal of the Korean Applied Science and Technology
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• v.32 no.4
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• pp.718-723
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• 2015

For the fabrication of the Si negative electrode in Li-ion batteries (LIBs) containing the cross-linking polymer binder, in this work, the urethane acrylate (UA) oligomer was synthesized via a simple synthetic process. The cross-linked poly(urethane acrylate) (CPUA)/carbone black (CB)/Si composite (CPUA/CB/Si composite) was fabricated through reactions between their reactive vinyl segments in the UA oligomer. Interestingly, the CPUA/CB/Si composite showed better cycle performance than the poly(vinylidene fluoride) (PVdF)/CB/Si composite (PVdF/CB/Si composite) and the polyurethane (PU)/CB/Si composite (PU/CB/Si composite). The CPUA/CB/Si composite had the best lithiation of about $2586mAh\;g^{-1}$. The UA oligomer showed a good compatibility with the electrode materials and current collector after and before a curing process.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.27-33
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• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.