• 한국세라믹학회지
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• 제37권1호
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• pp.21-25
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• 2000

Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.361-361
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• 2010

The separated quasi-one-dimensional ($7{\times}7$) and ($5{\times}5$) phases on vicinal Si(557) surfaces were successfully realized by changing the crystallographic orientation and thermal treatment conditions. A small change in the crystallographic orientation of the Si(557) surface stabilized the quasi-one-dimensional ($5{\times}5$) phase of a (111) facet on vicinal Si(557) surfaces and made it coexist with a quasi-one-dimensional ($7{\times}7$) phase after an optimal thermal treatment, whereas only the quasi-one-dimensional ($7{\times}7$) phase was stable on the Si(557) surface. Interestingly, this causes the (111) terraces with different widths (L) to prefer only one of the $5{\times}5$ (L=12) and $7{\times}7$ (L=9) phases resulting in long-range order of both phases along the step edge direction, which was observed by scanning tunneling microscopy (STM) and was supported by first principle calculations. In contrast, the quasi-one-dimensional ($5{\times}5$ and ($7{\times}7$) phases were arranged randomly across the step edge direction. The change of surface morphology of vicinal Si(557) surfaces will be discussed with STM images and theoretical calculations by changing crystallographic cutting angles and thermal treatment conditions.

• 대한방사선치료학회지
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• 제25권2호
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• pp.159-165
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• 2013

목적: 복부압박장치를 적용한 정위적방사선치료 시 환자 호흡에 기인하는 내부종양용적의 동적변이 양상을 연구하고자 하였다. 대상 및 방법: 2012년 4월부터 2013년 4월까지 복부압박장치를 이용하여 정위적방사선치료를 받은 폐암 환자 20명(상엽 7명, 중엽 4명, 하엽 9명), 총 67건을 대상으로 하였다. 치료 자세의 변동과 호흡에 의해 움직이는 종양 위치 변동을 알아보기 위해 4차원 cone- beam CT (4D-CBCT)를 사용하여 좌표 이동 값을 얻었다. 각 부위별로 LR (좌우), SI (상하), AP (전후) 방향의 벡터의 95% 신뢰구간(95% Confidence interval, 95% CI), 최대값, 그리고 최소값을 통하여 비교하였으며 자세변동 보정 값과 호흡변동 보정 값 간의 피어슨 곱 상관계수를 통하여 일치도를 분석하였다. 결과: 호흡에 의한 종양용적의 각 부위별로 변동은 폐 상엽에서 1.8~2.9 mm, 중엽과 하엽에서 2.3~5.4 mm, 2.2~4.0 mm로 분석되었다(95%CI, P<0.001). 자세변동 보정 값과 호흡변동 보정 값 간의 일치도($R^2$)를 살펴보면 상엽은 LR방향, SI방향, AP 방향에서 각각 0.75, 0.68, 0.63으로 나타났고, 중엽은 각각 0.82, 0.51, 0.92로 나타났으며, 하엽은 각각 0.63, 0.50, 0.34로 나타났다. 결론: 폐암의 정위적방사선 치료 시 복부압박장치의 사용으로 폐에 위치하는 종양은 환자 호흡에 의해 각 부위별로 각기 다른 양상을 보였다. 따라서 치료 자세에 대한 보정뿐만 아니라 호흡에 의한 변동을 보정해야만 한다. 또한 이러한 각기 다른 동적변이로 인한 오차의 보정 시 4D-CBCT의 사용은 매우 유용한 것으로 사료된다.

• 한국세라믹학회지
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• 제32권4호
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1050-1053
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• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• 한국전기전자재료학회논문지
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• 제26권6호
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• pp.441-445
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• 2013

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

• 한국주조공학회지
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• 제16권2호
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• pp.132-140
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• 1996

Both cast and extruded composites of SiC whisker reinforced 6061 Al alloy matrix were fabricated by high pressure infiltration of the alloy melt into the SiC preform and subsequent hot extrusion of the composite ingots. The micro structures, age hardening behavior and mechanical properties have been examined on the both cast and extruded composites of SiCw/6061. The cast composites of SiCw/6061 were obtained in which SiC whiskers were randomly oriented. Hot extrusion of these cast composites lead to alignment of the whisker in the direction of extrusion. Strengthening effect of whisker in the extruded composites is lower than that of the cast composites. The cast composites of SiCw/6061 showed higher thensile strength and lower elongation than extruded composites of SiCw/6061 at all testing temperatures. Lower tensile strength and higher elongation of the extruded composites were attributable to fine grain structures in which grain boundary sliding occruued preferentially at elevated temperatures.

• 한국진공학회지
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• 제4권S2호
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• 한국결정성장학회지
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• 제9권1호
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• pp.84-88
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• 1999

결정성장 조건을 달리하여 공공관련 결함들의 발생영역의 크기가 다르게 형성되도록 성장한 실리콘 결정에서 반경 방향의 산소석출 거동을 고찰하였다. 반경 방향의 산소석출 거동은 결정성장 조건에 따른 공공 영역의 크기에 의존적이다. 반경 방향의 산소석출 거동은 공공우세 영역이 격자간원자 우세영역보다 산소석출이 증가한다. 또한 공공우세 영역과 격자간원자 우세영역 가장자리에서는 비정상적으로 산소석출이 크게 증가한다. 이 두 영역 경계에서는 산소석출이 거의 일어나지 않는다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1301-1304
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• 2007

We have investigated degradation of short channel n-type poly-Si TFTs with LDD under high gate and drain voltage stress due to self-heating. We have found that the threshold voltage of short channel TFT is shifted to negative direction on the selfheating stress, whereas the threshold voltage of long channel is moved to positive direction.