• 한국재료학회지
• /
• 제10권4호
• /
• pp.276-281
• /
• 2000

Si(111) 표면을 NH$_3$분위기에서 실리콘질화물(SiNx)로 변형시킨 후 탄화규소(silicon carbide, SiC) 박막을 성장하였다. 질화시간이 증가함에 따라 SiC 박막 두께가 감소함을 관찰하였다. 또한 성장변수에 따라 SiC/Si 계면에서 결정결함인 틈새를 없앨 수 있었다. 100nm, 300nm, 500nm의 SiNx/Si 기판 위에 SiC 박막을 성장시켰다. 성장된 SiC 박막들은 모두 [111]면을 따라 성장되었고, SiC 결정들이 원주형 낟알로 성장되었다. SiC/SiNx 계면에서 void를 관찰할 수 없었다. 이러한 실험 결과는 SOI 구조의 산화규소를 SiNx로 대체함으로써 SiC 소자 제작에 응용될 수 있는 방향을 제시하고 있다.

• 한국세라믹학회지
• /
• 제26권1호
• /
• pp.139-145
• /
• 1989

An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.116-117
• /
• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• 한국세라믹학회지
• /
• 제34권10호
• /
• pp.1021-1026
• /
• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• 한국재료학회지
• /
• 제28권2호
• /
• pp.113-117
• /
• 2018

Effects of annealing temperature on the microstructure and mechanical properties through thickness of a cold-rolled Cu-3.0Ni-0.7Si alloy were investigated in detail. The copper alloy with thickness of 3 mm was rolled to 50 % reduction at ambient temperature without lubricant and subsequently annealed for 0.5h at $200{\sim}900^{\circ}C$. The microstructure of the copper alloy after annealing was different in thickness direction depending on an amount of the shear and compressive strain introduced by rolling; the recrystallization occurred first in surface regions shear-deformed largely. The hardness distribution of the specimens annealed at $500{\sim}700^{\circ}C$ was not uniform in thickness direction due to partial recrystallization. This ununiformity of hardness corresponded well with an amount of shear strain in thickness direction. The average hardness and ultimate tensile strength showed the maximum values of 250Hv and 450MPa in specimen annealed at $400^{\circ}C$, respectively. It is considered that the complex mode of strain introduced by rolling effected directly on the microstructure and the mechanical properties of the annealed specimens.

• 대한전자공학회논문지SD
• /
• 제47권8호
• /
• pp.23-28
• /
• 2010

본 논문에서는 각각 다른 캐리어 방향성을 가지는 strained-silicon PMOSFET에서 소자의 디지털 및 아날로그 성능을 비교 평가 하였다. 캐리어 방향이 <100>을 갖는 소자의 경우 이동도 향상에 의해서 <110> 방향의 소자 보다 우수한 드레인 구동 전류 및 출력저항 특성을 보이지만, NBTI 신뢰성과 소자의 matching 특성은 반대로 다소 열화 됨을 확인 하였다. 따라서 나노미터급 CMOSFET에서 캐리어 방향성을 이용한 이동도 향상 기술의 적용을 위해서는 DC 성능을 비롯한 신뢰성 및 아날로그 특성을 모두 고려하는 것이 반드시 필요하다고 할 수 있다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.184-184
• /
• 2011

Using first-principles density-functional calculations, we investigate the chain reaction mechanism of allyl alcohol (ALA) molecules on the H-terminated Si(001)-2${\times}$1 surface. Recently, it was reported [1] that allyl mercaptan (ALM) molecules show a self-directed line growth across the dimer rows through a chain reaction involving several reaction processes: (i) The created radical at the C atom is transferred to the S atom, (ii) the resulting S-centered radical easily abstracts an H atom from the neighboring dimer row, and (iii) the generated S-H group further reacts with the neighboring dimer row to produce the Si-S bond on the neighboring dimer row, accompanying the associative desorption of H2. This H2-desorption process creates a new DB on the neighboring dimer row, setting off the chain reaction across the dimer rows. In the present study, we find that although the structure of ALA with -OH functional is analogous to that of ALM with -SH functional, ALA and ALM lines show a difference in their growth direction. We predict that ALA undergoes the chain reaction to show a line growth along the dimer row, contrasting with the ALM line growth across the Si dimer rows. Our analysis shows that the different growth direction of ALA is due to the strong instability of oxygen radical intermediate, which prevents from growing across the dimer rows. Thus, we demonstrate that the stability of the radical intermediate plays a crucial role in determining the direction of molecular line growth.

• Journal of Magnetics
• /
• 제2권1호
• /
• pp.16-21
• /
• 1997

Those were investigated, the crystallographic, morphological, and magnetic properties of barium ferrite film (SiO2/Si substrate) prepared by sol-gel dip coating. Appropriate sol was prepared by dissolvin barium and iron nitrate in ethylene glycol at 80$^{\circ}C$. To obtain the films, thermally oxidized p-type silicon substrate with (111) of crystallographic orientation were dipped into the sol, dried at 250$^{\circ}C$ to remove organic material, and heated at 800$^{\circ}C$ for 3 hours in air for the crystallization of barium ferrite. It was found that the particles of barium ferrite formed on the substrate exhibited needle-like shape placing parallel to the substrate and its c-axis is long axis direction. There was tendency that the coercive force in horizontal direction to the substrate was higher than that in vertical direction to it. This tendency was profound in large thickness.

• 한국전기전자재료학회논문지
• /
• 제14권5호
• /
• pp.410-416
• /
• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• 대한전기학회논문지
• /
• 제40권5호
• /
• pp.496-500
• /
• 1991

The effects of annealing with and without magnetic field on magnetic properties of amorphous Fe-B-Si cores have been investigated as a function of toroidal stress. By decreasing the toroidal stress, the magnetic properties of the amorphous ribbon have beenimproved. Near 180 domain walls exist in the thermally annealed toroidal cores, but the domain walls exist in the thermally annealed toroidal cores, but the domain walls are not parallel to the longitudinal direction of the ribbon. In the specimen annealed with a magnetic field strength of 10 Oe in the longitudinal ribbon length axis, the domains are nearly parallel to the longitudinal direction due to the field induced uniaxial anisotropy resulting in further increase in the remanent magnetization and decrease in the coercive force and loss.