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Dependence of Analog and Digital Performance on Carrier Direction in Strained-Si PMOSFET  

Han, In-Shik (Department of Electronics Engineering, Chungnam National University)
Bok, Jung-Deuk (Department of Electronics Engineering, Chungnam National University)
Kwon, Hyuk-Min (Department of Electronics Engineering, Chungnam National University)
Park, Sang-Uk (Department of Electronics Engineering, Chungnam National University)
Jung, Yi-Jung (Department of Electronics Engineering, Chungnam National University)
Shin, Hong-Sik (Department of Electronics Engineering, Chungnam National University)
Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University)
Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.8, 2010 , pp. 23-28 More about this Journal
Abstract
In this paper, comparative analysis of digital and analog performances of strained-silicon PMOSFETs with different carrier direction were performed. ID.SAT vs. ID.OFF and output resistance, Rout performances of devices with <100> carrier direction were better than those of <110> direction due to the greater carrier mobility of <100> channel direction. However, on the contrary, NBTI reliability and device matching characteristics of device with <100> carrier direction were worse than those with <110> carrier direction. Therefore, simultaneous consideration of analog and reliability characteristics as well as DC device performance is highly necessary when developing mobility enhancement technology using the different carrier direction for nano-scale CMOSFETs.
Keywords
Strained-Silicon; Carrier Direction; NBTI; Matching Characteristic;
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