• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.1
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• pp.122-131
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• 1995

The research trends for metal matrix composites have been on basic mechanical properties, fatigue behavior after aging and fractographic observations. In this study, the fatigue crack initiation as well as the fatigue crack growth behavior and the fracture mechanism were investigated through observations of the fracture surface on silicon carbide particles reinforced aluminum metal matrix composites(SiCp/Al). Based on the fractographic study done by scanning electron microscope and replica, crack growth path model and fracture mechanism are presented. The mechanical properties, such as the tensile strength, yield strength and elongation of SiCp/Al composites are improved in a longitudinal direction, however, the fatigue life is shorter than the basic Al6061 alloys. From fractographic observations, it is found that the failure mode is ductile in basic Ai6061 alloys. And because some SiC particles were pulled out from the matrix and a few SiC particles could be seen on the fracture surface of SiCp/Al, crack growth paths are believed to follow the interface of the matrix and its particles.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.378-383
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• 2013

Continuous fiber-reinforced ceramic matrix composites (CFCCs) have a complex distribution of porosity, consisting of interfiber micro pores and interbundle/interply macro pores. Owing to the complex geometry of the pores and fiber architecture, it is difficult to obtain representative microstructural features throughout the specimen volume with conventional, destructive ceramographic approaches. In this study, we introduce X-ray computed microtomography (X-ray ${\mu}CT$) to nondestructively analyze the microstructures of disk shaped and tubular $SiC_f$/SiC composites fabricated by the chemical vapor infiltration (CVI) method. The disk specimen made by stacking plain-woven SiC fabrics exhibited periodic, large fluctuation of porosity in the stacking direction but much less variation of porosity perpendicular to the fabric planes. The X-ray ${\mu}CT$ evaluation of the microstructure was also effectively utilized to improve the fabrication process of the triple-layered tubular SiC composite.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.677-682
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• 2003

SiC nanowires were synthesized by carbothermal reduction using metal catalysts. Synthesized nanowires had mean diameters of 30∼50 nm and several $\mu\textrm{m}$ length. The kind of catalysts affects form of SiC nanowire because of difference of growth mechanisms. These differences were made by catalyst's physical property and relative activities to the source gas. Ni acted a conventional catalyst of VLS growth mechanism. But, Case of Fe, SiC nanowire was grown by stable VLS growth mechanism without relation of growth conditions. SiC nanowire was grown by two step growth model using Cr catalyst. Conversion ratios to the SiC nanowire were increased with growth conditions. Case of Cr, conversion ratio was about 45% that was higher than other catalyst used. This high conversion ratio was obtained by the addition VS growth to radial direction on the as-grown nanowires.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.283-287
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• 2002

We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.100-103
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• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.295-300
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• 2018

Effects of annealing temperature on the microstructure and mechanical properties through thickness of a Cu-3.0Ni-0.7Si alloy processed by differential speed rolling are investigated in detail. The copper alloy with a thickness of 3 mm is rolled to a 50 % reduction at ambient temperature without lubricant and subsequently annealed for 0.5 h at $200-900^{\circ}C$. The microstructure of the copper alloy after annealing is different in the thickness direction depending on the amount of the shear and compressive strain introduced by the rolling; the recrystallization occurs first in the upper roll side and center regions which are largely shear-deformed. The complete recrystallization occurs at an annealing temperature of $800^{\circ}C$. The grain size after the complete recrystallization is finer than that of the conventional rolling. The hardness distribution of the specimens annealed at $500-700^{\circ}C$ is not uniform in the thickness direction due to partial recrystallization. This ununiformity of hardness corresponds well to the amount of shear strain in the thickness direction. The average hardness and ultimate tensile strength has the maximum values of 250 Hv and 450 Mpa, respectively, in the specimen annealed at $400^{\circ}C$. It is considered that the complex mode of strain introduced by rolling directly affects the microstructure and the mechanical properties of the annealed specimens.