• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 대한기계학회논문집A
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• 제31권2호
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• pp.205-210
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• 2007

SiC/SiC composites and monolithic SiC materials have been fabricated by the melt infiltration process, through the creation of crystallized SiC phase by the chemical reaction of C and Si. The reinforcing material used in this system was a braided Hi-Nicalon SiC fiber with double interphases of BN and SiC. The microstructures and the mechanical properties of RS-SiC based materials were investigated through means of SEM, TEM, EDS and three point bending test. The matrix morphology of RS-SiS/SiC composites was greatly composed of the SiC phases that the chemical composition of Si and C is different. The TEM analysis showed that the crystallized SiC phases were finely distributed in the matrix region of RS-SiC/SiC composites. RS-SiC/SiC composites also represented a good flexural strength and a high density, accompanying a pseudo failure behavior.

• 한국진공학회지
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• 제1권1호
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• pp.37-42
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• 1992

16M/64M DRAM 제조공정에 적용할 수 있는 ECR 방식의 플라즈마 etcher를 개발 하여 Poly-Si 식각공정에 적용하였다. 공정압력, 사용가스 및 초고주파 전력의 공정변수 변 화에 따른 Poly-Si의 식각율 및 선택비 변화를 조사하였다. 초고주파의 전력이 증가할수록 식각율과 Oxide에 대한 선택비가 증가하는 경향을 보였으며 6mT의 공정압력에서 최적치를 보였다. 공정가스 SF6/SF6 + Cl2의 값이 증가할수록 식각율 및 선택비의 감소가 있었으며 이는 최적 공정변수를 찾지 못하였기 때문으로 분석된다.

• 항공우주기술
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• 제4권2호
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• pp.192-198
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• 2005

발사체 개발사업에서 SI(System integration) 업무란 SI 주관부서로 입고된 발사체 각 부분체들을 시험 및 검사를 통한 적절한 품질관리와 병행하면서 조립하여 하나의 완성된 발사체를 조립하고, 실제로 발사 임무를 수행하는 과정이다. 우주발사체 SI업무는 어느 한 부서의 독립적인 업무가 아니라 모든 기능부서 및 협력업체의 자발적인 협력이 필요한 종합업무이다. 본 문서는 발사체 사업단의 SI업무를 기술함으로서, 발사체 사업에 참여한 기능부서와 협력업체들로 하여금 SI 업무에 대한 이해를 돕는 뿐만 아니라, 실제 SI 업무에서 좀더 효율적인 협업을 위해서 작성되었으며, 이 후 기능부서와 협력업체와의 지속적인 협의를 통해 구체화 될 것이다.

• 한국세라믹학회지
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• 제51권5호
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• pp.453-458
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• 2014

SiC and its composites have been considered for use as nuclear fuel cladding materials of pressurized light water reactors. In this study, a $SiC_f$/SiC composite as a constituent layer of SiC triplex fuel cladding was fabricated using a chemical vapor infiltration (CVI) process in which tubular SiC fiber preforms were prepared using a filament winding method. To enhance the matrix density of the composite layer, winding patterns, deposition temperature, and gas input ratio were controlled. Fiber arrangement and porosity were the main parameters influencing densification behaviors. Final density of the composites decreased as the SiC fiber volume fraction increased. The CVI process was optimized to densify the tubular preforms with high fiber volume fraction at a high $H_2$/MTS ratio of 20 at $1000^{\circ}C$; in this process, surface canning of the composites was effectively retarded.

• 한국표면공학회지
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• 제48권5호
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• pp.218-226
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• 2015

The goal of this study is to investigate a metal cladding that contains SiC composites as a protective layer and analysis the characteristics of the specimens on high temperature oxidation To make SiC composites, the current process needs a high temperature (about $1100^{\circ}C$) for the infiltration of fixing materials such as SiC. To improve this situation, we need a low temperature process. In this study, we developed a low temperature process for making SiC composites on the metal layer, and we have made two kinds: cladding with protective SiC composites made by polycarbosilane(PCS), and a PCS filling method using supercritical carbon dioxide. A corrosion test at $1200^{\circ}C$ in a mixed steam and Ar atmosphere was performed on these specimens. The result show that the cladding with protective SiC composites have excellent oxidation suprression rates. This study can be said to have developed new metal cladding with enhanced durability by using SiC composite as protective films of metal cladding instead of simple coating film.

• 산업기술연구
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• 제26권B호
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 한국응용과학기술학회지
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• 제32권4호
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• pp.718-723
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• 2015

For the fabrication of the Si negative electrode in Li-ion batteries (LIBs) containing the cross-linking polymer binder, in this work, the urethane acrylate (UA) oligomer was synthesized via a simple synthetic process. The cross-linked poly(urethane acrylate) (CPUA)/carbone black (CB)/Si composite (CPUA/CB/Si composite) was fabricated through reactions between their reactive vinyl segments in the UA oligomer. Interestingly, the CPUA/CB/Si composite showed better cycle performance than the poly(vinylidene fluoride) (PVdF)/CB/Si composite (PVdF/CB/Si composite) and the polyurethane (PU)/CB/Si composite (PU/CB/Si composite). The CPUA/CB/Si composite had the best lithiation of about $2586mAh\;g^{-1}$. The UA oligomer showed a good compatibility with the electrode materials and current collector after and before a curing process.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.27-33
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• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.