• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.145-150
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• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• Journal of Energy Engineering
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• v.2 no.3
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• pp.258-267
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• 1993

A mathematical model has been developed to describe heat transfer phenomena in a PCM (phase change material) module for development of an energy recovery system. The PCM module, melting point of which is around 1673 K, consists of silicon(96.8%), aluminium(2.7%) and marginal amounts of impurities such as Ca, Fe and Ti. The module is covered by a capsule that consists of SiC(58%) and graphite(42%). Physical properties that are required for model predictions were cited from the references. The apparent capacity method and the postiterative method wert used in the mathematical model to describe the phase changing mechanism. Temperature and velocity of fluid are the major variables in the model calculation. For the gas temperature of 1773 K that simulates real operating conditions, the prediction shows that PCM is rapidly melted to axial direction. However, for the gas temperature of 3000 K that is higher than the real conditions, PCM is melted rapidly to the radial direction. The gas velocity has no influence on the melting phenomena of the PCM except when the gas velocity is relatively low. At the low gas velocity asymmetry of the temperature profiles in PCM is obtained.

• Journal of the Korean Magnetics Society
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• v.13 no.2
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• pp.64-69
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• 2003

Ba-ferrite thin films were prepared on Si substrate with ${\alpha}$-Fe$_2$O$_3$ underlayer by a pulsed laser deposition system and characterized by X-ray, SEM, Mossbauer spectroscopy and VSM. The appropriate conditions of pulsation in ${\alpha}$-Fe$_2$O$_3$ and Ba-ferrite were the oxygen pressure of 0.1 Torr at a substrate temperature of 400$^{\circ}C$. Ba-ferrite crystals had the forms of ellipsoidal or needle and the grains shaped the more lumps with increasing the film thickness. Mossbauer spectroscopy assured that the direction of atomic spin in Fe ion was not random but had the tendency of arrangement normal to the substrate. The coercive force and squareness of hysteresis were larger in normal than in plane to the substrate but, the magnetic saturation moment was contrary to them. The spin arrangement was strongly affected by ${\alpha}$-Fe$_2$O$_3$ underlayer and the high coercive force and squareness were influenced by this. The crystal structure was conformed to be a Magntoplumbite symmetry with the hexagonal unit cell and the lattice constant of a increased with increasing film thickness, while c decreased

• Journal of the Korean Society for Heat Treatment
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• v.31 no.6
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• pp.269-274
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• 2018

Grain-oriented electrical steel sheets are mainly used as core materials for transformers and motors. They should have excellent magnetic properties such as low core loss, high magnetic flux density and high permeability. In order to improve the magnetic properties of the electrical steel sheet, it is important to form Goss oriented grains with a very strong {110}<001> orientation. Recently, efforts have been made to develop Goss grains by controlling processes such as hot rolling, cold rolling, and primary and secondary recrystallization. In this study, the sheets containing 3.2 and 3.4wt.% Si were used, which were rolled with 1 and 10 passes with total thickness reduction of 89%. Heating was carried out for primary recrystallization with different heating rates of $25^{\circ}C/s$ and $24^{\circ}C/min$ until $720^{\circ}C$. The behavior of Goss-, {411}<148>-, and {111}<112>-oriented grains were analyzed using X-ray diffraction(XRD) and electron back-scatter diffraction(EBSD) analysis. The area fraction of Goss-oriented grains increased with the number of rolling passes during cold rolling; however, after the primary recrystallization, the area fraction of the Goss grains was higher and exact Goss grains were found in the specimens subjected to rapid heating after one rolling pass.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.81-85
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• 2013

Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Membrane Journal
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• v.27 no.2
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• pp.182-188
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• 2017

Sulfonated poly(arylene ether sulfone) (SPAES)-3-mercaptopropyl silica gel (3MPTSG) composite membranes with improved oxidative stability were prepared for polymer electrolyte fuel cell application. It has been reported that ether part of main chain of aromatic hydrocarbon based membranes were weak to radical attack to decrease membrane durability. In this study, the hydrophilic inorganic particles were introduced by minimizing a decrease in ion conductivity and increasing an oxidative stability. The composite membranes were investigated in terms of ionic conductivity, ion exchange capacity (IEC), FT-IR, TGA and contact angle, etc. As a result, increasing amount of the 3MPTSG resulted in decrease in proton conductivities and water uptakes at 100% R.H. but enhanced thermal and oxidative stabilities.

• Korean Chemical Engineering Research
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• v.58 no.1
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• pp.1-20
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• 2020

Development of efficient methods for clean energy production became a critical issue to improve the quality of human lives. Solar cells is considered as one of the alternative solutions to resolve the issue. Although Si-based solar cells are only popularly utilized for practical applications, high manufacturing cost is considered as a serious drawback for further versatile applications. Thus, different types of are being investigated aiming to replace the Si-based solar cells. Recently, perovskite solar cells (PSC) are considered as a potential replacement for Si-based solar cells due to their low production cost, high power conversion efficiency, light weight and possibility of flexible device fabrication. Thus, we have reviewed the challenges of PSC faced with practical application, particularly on stability.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.295-300
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• 2018

Effects of annealing temperature on the microstructure and mechanical properties through thickness of a Cu-3.0Ni-0.7Si alloy processed by differential speed rolling are investigated in detail. The copper alloy with a thickness of 3 mm is rolled to a 50 % reduction at ambient temperature without lubricant and subsequently annealed for 0.5 h at $200-900^{\circ}C$. The microstructure of the copper alloy after annealing is different in the thickness direction depending on the amount of the shear and compressive strain introduced by the rolling; the recrystallization occurs first in the upper roll side and center regions which are largely shear-deformed. The complete recrystallization occurs at an annealing temperature of $800^{\circ}C$. The grain size after the complete recrystallization is finer than that of the conventional rolling. The hardness distribution of the specimens annealed at $500-700^{\circ}C$ is not uniform in the thickness direction due to partial recrystallization. This ununiformity of hardness corresponds well to the amount of shear strain in the thickness direction. The average hardness and ultimate tensile strength has the maximum values of 250 Hv and 450 Mpa, respectively, in the specimen annealed at $400^{\circ}C$. It is considered that the complex mode of strain introduced by rolling directly affects the microstructure and the mechanical properties of the annealed specimens.

• Journal of Korean Society of Forest Science
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• v.102 no.2
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• pp.292-299
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• 2013

The purpose of this study is to identify the regional specialization of Fruit trees in Korea and to provide direction for the activation. As a result of the analysis, In the case of chestnut, Gongjun is adjacent to Cheongyang and Buyeo. These region are classified as deeply specialized regions. Walnut trees are grown in large amounts in Gimcheon-si, Yeongdong-gun and Muju-gun, which are all regions classified as deeply specialized regions. Jujube trees are grown mostly Gyeongsan-si, Gunwi-gun, Cheongdo-gun and Yeongcheonsi are geographically close to each other. The production quantity of these areas also showed steady growth. These region are classified as deeply specialized regions. Astringent persimmons are Sangju-si and Yeoungdonggun are close to each other. Other regions are scattered over the country.