• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.122-128
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with various underlayers. Ba-ferrite thin films with various underlayers were deposited by reactive RF/DC magnetron sputtering system at room temperature. various underlayers was reactive sputtered with O$_2$. After deposition, the thin films were annealed at 850 $^{\circ}C$ to get the crystallized sample. Underlayers were used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by underlayers. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with various underlayers can be used as longitudinal recording media.

• Radiation Oncology Journal
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• v.23 no.3
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• pp.169-175
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• 2005

Purpose: Although computed tomography (CT) simulators are commonly used in radiation therapy department, many Institution still use conventional CT for treatments. In this study the setup errors that occur during simulation, CT scan (diagnostic CT scanner), and treatment were evaluated for the twenty one breast cancer patients. Materials and Methods: Errors were determined by calculating the differences in isocenter location, SSD, CLD, and locations of surgical clips implanted during surgery. The anatomic structures on simulation film and DRR image were compared to determine the movement of isocenter between simulation and CT scan. The isocetner point determined from the radio-opaque wires placed on patient's surface during CT scan was moved to new position if there was anatomic mismatch between the two images Results: In 7/21 patients, anatomic structures on DRR Image were different from the simulation Image thus new isocenter points were placed for treatment planning. The standard deviations of the diagnostic CT setup errors relative to the simulator setup in lateral, longitudinal, and anterior-posterior directions were 2.3, 1.6, and 1.6 mm, respectively. The average variation and standard deviation of SSD from AP field were 1.9 mm and 2.3 mm and from tangential fields were 2.8 mm and 3.7 mm. The variation of the CLD for the 21 patients ranged from 0 to 6 mm between simulation and DRR and 0 to 5 mm between simulation and treatment. The group systematic errors analyzed based on clip locations were 1.7 mm in lateral direction, 2.1 mm in AP direction, and 1.7 mm in SI direction. Conclusion: These results represent that there was no significant differences when SSD, CLD, clips' locations and isocenter locations were considered. Therefore, it is concluded that when a diagnostic CT scanner is used to acquire an image, the set-up variation is acceptable compared to using CT simulator for the treatment of breast cancer. However, the patient has to be positioned with care during CT scan in order to reduce the setup error between simulation and CT scan.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.403-409
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• 1993

In this paper, an $NH_3$, added during dry oxidation and annealing m Si( 111) is clarified effect ive to suppress or remove defects. Annealing effects in $N_2$ and $NH_3/N_2$ ambient are estimated with dry $O_2$ and $NH_4$ oxidation($NH_3$ added in dry $O_2$ oxidation) method. C;em'rated defects in dry $O_2$ oxidation are lengthened according to oxidation time. but any defects in $NH_3$ oxidation are not found. Dry oxidation, after $NH_3$ oxidation as an initial oxidation. lias the defect -removing effect at the interface of Si -$SiO_2$. After dry or $NH_3$. oxidation. the annealmg 7.5% $NH_3/N_2$ ambient brings out gettering effect of OSF. The annealing in 7.5% $NH_3/N_2$ ambient for NI L oxidation method decreaSE,s $NH_3$ length of OSF about 20 % compared with dry oxidation method. Tlw feature of OSF is pit type, the gettering is directed to (011) plane for (111) plane. and OSFs are etched following to 110) directIon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.254-261
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• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• Composites Research
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• v.29 no.4
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• pp.194-202
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• 2016

A graphene film, two-dimensional carbon sheet, is a promising material for future electronic devices and so on. In graphene applications, the effect of substrate on the atomic/electronic structures of graphene is significant, so we studied an interaction between graphene film and substrate. To study the effect, we investigated the graphene films grown on Ni substrate with two crystal face of (111) and (100) by Raman spectroscopy, comparing with graphene films transferred on $SiO_2/Si$ substrate. In our study, the doping effect caused by charge transfer from Ni or $SiO_2/Si$ substrate to graphene was not observed. The bonding force between graphene and Ni substrate is stronger than that between graphene and $SiO_2/Si$. The graphene films grown on Ni substrate showed compressive strain and the growth of graphene films is incommensurate with Ni (100) lattice. The position of 2D band of graphene synthesized on Ni (111) and (100) substrate was different, and this result will be studied in the near future.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.17-24
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• 1996

Planar multi-junction thermal converters were fabricated for precise measurements of the ac voltage and current by an ac-dc transfer method. A heater and a thermocouple array were fabricated onto a sandwiched membrane, $Si_{3}N_{4}$ (200 nm) / $SiO_{2}$ (400 nm) / $Si_{3}N_{4}$ (200 nm), a thickness of $0.8\;{\mu}m$ and a size of $2{\times}4\;mm^{2}$, which is supported by a surrounding frame. The NiCr heater is located at the center of the membrane vertically. Hot junctions of $48{\sim}156$ pairs of thermocouples (Cu-CuNi44) are located near or onto the heater, and cold junctions are located onto the silicon frame. Output of the thermal converters for 10 mA dc input was $76\;mV{\sim}382\;mV$ dependent on a model, and short term stability of the outputs was ${\pm}5{\sim}15\;ppm$/ 10 min with 5 mA dc input. Responsivity in air was in the range of $3.9{\sim}14.5V/W$. Responsivity of the model BF48 in air which has 48 thermocouples was 2 times or greater than that of 3 dimensional multi-junction thermal converter in vacuum which has 56 thermocouples. AC-DC transfer differences with an input of 10 mA or less were less than ${\pm}1\;ppm$ in the frequency range from 5 Hz to 2 kHz, and about $2{\sim}3\;ppm$ at 5 kHz and 10 kHz.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.84-84
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• 1999

최근 큰 잔류분극을 가진 강유전체 Pb(Zr, Ti)O3 박막을 이용한 비휘발성 기억소자의 연구가 활발히 진행되고 있다. 그러나 Pb(Zr, Ti)O3 박막을 비휘발성 기억소자로 응용하는 경우 분극피로(polarization fatigue), imprint, 누설전류 등의 문제점이 나타나는 것으로 알려져 있다. 특히 분극반전 횟수가 증가할수록 잔류분극이 감소하는 분극피로 현상은 비휘발성 기억소자의 응용에 있어서 치명적인 장애가 되므로 기억소자의 실용화를 위해서는 분극피로 현상의 개선이 무엇보다 중요하다. 본 연구에서는 Pb(Zr, Ti)O3 강유전체 박막의 분극피로 현상을 규명하고 개선하기 위해서 다음과 같은 세가 실험적 방법으로 접근하였다. 먼저 Pt와 금속산화물인 LaNiO3을 이용하여 상·하부 전극을 달리하여 제조한 축전기에 대해서 분극피로 특성을 관찰하고 이로부터 분극피로 현상에 대한 전극의 효과를 조사하였다. 여기서 금속산화물인 LaNiO3 박막과 Pt 박막은 r.f. 스퍼트 법으로 증가하였으며 Pb(Zr, Ti)O3 박막은 LaNiO3/Si(100)/와 Pt/Ti/SiO2/i(100) 기판위에 졸겔법으로 제조하였다. 다음으로 분극피로된 박막의 상부전극에 극성이 다른 직류전압을 인가해주었을 때 나타나는 분극회복 현상을 광범위하게 관찰하였으며, 특히 직류전압의 극성에 따라 비대칭적인 분극회복 특성을 보였다. 마지막으로 이와 같은 직류전압에 대한 비대칭적인 분극회복현상에 착안하여 양과 음의 방향으로 바이어스된 스윗칭 펄스를 인가하여 분극피로 특성을 조사한 결과 비대칭적인 분극피로 현상을 관찰할 수 있었다. 이와 같은 Pv(Zr, Ti)O3 박막의 분극피로와 회복의 비대칭적인 현상은 분극피로 현상의 기구를 밝히는 중요한 근거가 되었으며, 본 연구에서는 하부 계면에서의 산소빈자리의 역할로 분극피로 현상을 모형화하였다.식각하기 시작하였으며, 19.5J/cm2에서 유리기판의 rudraus(격벽 두께 130$\mu\textrm{m}$)까지 식각하였다. 대한 정보(RDF)는 명확하게 얻을 수 있었다.nospec과 SEM으로 관찰하였다. 또한 Ge 함량 변화에 따른 morphology 관찰과 변화 관찰을 위하여 AFM, SEM, XRD를 이용하였으며, 이온주입후 열처리 온도에 따른 활성화 정도의 관찰을 위하여 4-point probe와 Hall measurement를 이용하였다. 증착된 다결정 SiGe의 두게를 nanospec과 SEM으로 분석한 결과 Gem이 함량이 적을 때는 높은 온도에서의 증착이 더 빠른 증착속도를 나타내었지만, Ge의 함량이 30% 되었을 때는 온도에 관계없이 일정한 것으로 나타났다. XRD 분석을 한 결과 Peak의 위치가 순수한 Si과 순수한 Ge 사이에 존재하는 것으로 나타났으며, ge 함량이 많아짐에 따라 순수한 Ge쪽으로 옮겨가는 경향을 보였다. SEM, ASFM으로 증착한 다결정 SiGe의 morphology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에

• Analytical Science and Technology
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• v.13 no.5
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• pp.601-607
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• 2000

Lanthanum has been used as one of the burnup monitor in spent nuclear fuel. $U_3Si/Al$ spent nuclear fuel contains small amount of La in high concentration of U and Al. Therefore, chemical separation of La is required to remove matrix elements. At first, ion chromatography (IC) and inductively coupled plasma systems were installed in radiation shielded glove box to handle the radioactive samples. Retention behavior of uranium, aluminum, lanthanum and some interesting fission products (Sr, Zr, Y, Mo, Ru, Pd, Rh, Cs, Ba, Ce, Pr, Nd, Sm, Eu and Cd) was investigated using the CG10 column and ${\alpha}$-HiBA eluent. As all elements were eluted earlier than lanthanum in 0.2 M ${\alpha}$-HiBA eluent, a portion of U and Al was directly passed to waste using a three way valve between the column and the nebulizer. Thus it was possible to determine the lanthanum in a high concentration of U and Al matrix. Retention time of La was about 12 minutes in this separation condition. Optimum range for the determination of La in $U_3Si/Al$ spent nuclear fuel was $1-10{\mu}g/L$ (ppb) with this system and detection limit was $0.25{\mu}g/L$ in case of $200{\mu}L$ of sample volume.