• Title/Summary/Keyword: SI 방향

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Characterizations of Sputtered PZT Films on Pt/Ti/Si Substrates. (Pt/Ti/Si 기판위에 형성시킨 PZT박막의 특성)

  • Hwang, Yu-Sang;Baek, Su-Hyeon;Baek, Sang-Hun;Park, Chi-Seon;Ma, Jae-Pyeong;Choe, Jin-Seok;Jeong, Jae-Gyeong;Kim, Yeong-Nam;Jo, Hyeon-Chun
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.143-151
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    • 1994
  • On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

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Magnetic properties of $\textrm{SiO}_2$/CoNiCr/Cr thin films ($\textrm{SiO}_2$/CoNiCr/Cr 합금 박막의 자기적 성질)

  • Kim, Taek-Su;Kim, Jong-O;Seo, Gyeong-Su
    • Korean Journal of Materials Research
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    • v.7 no.1
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    • pp.69-75
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    • 1997
  • Thin films of $Si0_2(1000{\AA})/CoNiCr(400{\AA})/Cr$ were fabricated as a function of Cr thickness by KF magnetron sputtering. The saturation magnetization, coercive force and squareness with annealing temperature for these films were investigated. The values of saturation magnetization of $SiO_2/CoNiCr/Cr$ thin films decreased as the thickness of Cr underlayer increased, whereas coercive force increased as the thickness of Cr underlayer increased. The value of Ms was 600 emu/cc and the maximum value of Hc was 550 Oe. Especially, the value of saturation magnetization was rapidly decreased $SiO_2/CoNiCr/Cr(1700{\AA})$ thin films as the annealing temperature increased And the coercive force increased as the annealing temperature increased When annealing temperature was $650^{\circ}C$, the Ms was reduced to 90 % of the as-deposited film. And the Hc was showed maximum 1600 Oe. It was thought that Cr diffusion into CoNiCr layer reduced the magnetic moment of CoKiCr layer. In addition. Hc might he increased due to grain growth perpendicular to the film plane.

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Effect of ${Y_2}{O_3}$Buffer Layer on the Characteristics of Pt/$YMnO_3$/$Y_2$$O_3$/Si(MFIS) Structure (Pt/$YMnO_3$/$Y_2$$O_3$/Si(MFIS) 구조의 특성에 미치는 ${Y_2}{O_3}$층의 영향)

  • Yang, Jeong-Hwan;Sin, Ung-Cheol;Choe, Gyu-Jeong;Choe, Yeong-Sim;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.270-275
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    • 2000
  • The Pt/YMnO$_3$/Y$_2$O$_3$/Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of $Y_2$O$_3$layer on the properties of MFIS structure was investigated. The $Y_2$O$_3$ thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO$_3$ thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO$_3$. However, YMnO$_3$ thin films having good quality and stoichiometric composition can be obtained by adopting $Y_2$O$_3$ buffer layer. The memory window of the $Y_2$O$_3$thin films with YMnO$_3$ film is greater than that of the YMnO$_3$ thin films without $Y_2$O$_3$ film after the annealing at 85$0^{\circ}C$ in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.

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Growth and electrical properties of $MgTiO_3$ thin films ($MgTiO_3$산화물 박막의 성장 및 전기적 특성 연구)

  • 강신충;임왕규;안순홍;노용한;이재찬
    • Journal of the Korean Vacuum Society
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    • v.9 no.3
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    • pp.227-232
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    • 2000
  • $MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

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Synthesis and stability relations of zoisite $Ca_2$Al$_3$Si$_3$O$_{12}$(OH) at 2-4 kbar (조이사이트 $Ca_2$Al$_3$Si$_3$O$_{12}$(OH)의 합성 및 2-4 kbar에서의 안정관계)

  • Kim Hyung Shik;Park Chan Soo
    • The Journal of the Petrological Society of Korea
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    • v.1 no.1
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    • pp.42-48
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    • 1992
  • The equilibrium pressure-temperature curve of the reaction: 6 Ca$_2$Al$_3$(OH)Si$_3$O$_{12}$=6 CaAl$_2$Si$_2$O$_{8}$+2 Ca$_3$Al$_2$Si$_3$O$_{12}$+Al$_2$O$_3$+3 H$_2$O zoisite anorthite grossularite corundum was experimentally determined using both externally and internally heated pressure vessels in the pressure range of 2-4 kbar. Synthetic zoisite, anorthite, grossularite and corundum were used as starting materials. Starting materials were synthesized at 13-16 kbar using the piston-cylinder apparatus. The dehydration temperature of zoisite at 2 kbar is 550${\pm}$12$^{\circ}C$ and at 4 kbar is 575${\pm}$20$^{\circ}C$. Low thermal stability of synthetic zoisite relative to natural zoisite at 4 kbar is attributed to the structural disorder of synthetic anorthite.

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The Effect of Iron Content on the Atomic Structure of Alkali Silicate Glasses using Solid-state NMR Spectroscopy (비정질 알칼리 규산염 원자구조의 철 함량 효과에 관한 고체 NMR 분광학 연구)

  • Kim, Hyo-Im;Lee, Sung-Keun
    • Journal of the Mineralogical Society of Korea
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    • v.24 no.4
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    • pp.301-312
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    • 2011
  • The study on the atomic structure of iron-bearing silicate glasses has significant geological implications for both diverse igneous processes on Earth surface and ultra-low velocity zones at the core-mantle boundary. Here, we report experimental results on the effect of iron content on the atomic structure in iron-bearing alkali silicate glasses ($Na_2O-Fe_2O_3-SiO_2$ glasses, up to 16.07 wt% $Fe_2O_3$) using $^{29}Si$ and $^{17}O$ solid-state NMR spectroscopy. $^{29}Si$ spin-lattice ($T_1$) relaxation time for the glasses decreases with increasing iron content due to an enhanced interaction between nuclear spin and unpaired electron in iron. $^{29}Si$ MAS NMR spectra for the glasses show a decrease in signal intensity and an increase in peak width with increasing iron content. However, the heterogeneous peak broa-dening in $^{29}Si$ MAS NMR spectra suggests the heterogeneous distribution of $Q^n$ species around iron in iron-bearing silicate glasses. While nonbridging oxygen ($Na-O-Si$) and bridging oxygen (Si-O-Si) peaks are partially resolved in $^{17}O$ MAS NMR spectrum for iron-free silicate glass, it is difficult to distinguish the oxygen clusters in iron-bearing silicate glass. The Lorentzian peak shape for $^{29}Si$ and $^{17}O$ MAS NMR spectra may reflect life-time broadening due to spin-electron interaction. These results demonstrate that solid-state NMR can be an effective probe of the detailed structure in iron-bearing silicate glasses.

Improvement Directions through the Analysis of the Current States of Response Systems against Railway Casualties and Accidents of Urban Railways (도시철도 철도안전사상사고 대응체계현황 분석을 통한 개선방향 도출)

  • Mo, Chun Suk;Kim, Si Gon;Kwon, Young Jong;Kang, Kap Seang
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.35 no.4
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    • pp.969-975
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    • 2015
  • In this paper, we review the regulations relating to railway safety and station workers interviewed, eight urban rail accidents decreased operating agencies through the prevention research currently being conducted into the (Seoul Metropolitan Rapid Transit Corporation City, Seoul Metro, Incheon traffic mortality, etc.) the root cause for the lack of aggressive prevention measures performed on the difficulties related regulations, organizational culture and work environment, prevention of negative operating authority derived in three improvements were obtained through this direction. First proposed urban railway safety ever buy Conduct production, utilization and operating agencies college safety assistant suggests directions for safety training, organizational culture and work environment improvements in senior management. Finally, active accident prevention campaigns, and provide direction to increase the educational participation of guests. Improvement for such accidents would decrease is thought to play a role in the prevention of future operating agency established when the guidelines.

Limitations and Improvements for Water-related ODA Projects of South Korea (물 분야 공적개발원조(ODA) 지원사업의 한계와 개선방향)

  • Park, Sung-Je;Ryu, Si-Saeng
    • Proceedings of the Korea Water Resources Association Conference
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    • 2012.05a
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    • pp.229-229
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    • 2012
  • 물관리는 밀레니엄개발목표(Millennium Development Goals)의 달성과정에서 가장 강조되는 주제 중의 하나이다. 물관리의 최종목표는 물관리 그 자체가 아니라 자연적으로는 유한한 수자원의 지속가능성을 유지하고 사회적으로는 계층간의 형평성을 실현하는 것이다. 그러나 개발도상국들은 한정된 국가재정으로 기반시설의 투자가 부족하고 기후변화에 따른 자연재해의 빈발로 인하여 인간다운 삶의 질을 보장받기 어려운 상황에 직면하여 있다. 이러한 인식 아래, 미국, EU, 일본 등의 선진국은 물론 이웃 중국도 개발도상국을 대상으로 물 관련 사업의 공적개발원조(ODA) 프로그램을 활발하게 추진하고 있다. 최근 우리나라의 대 개도국 협력사업은 한국국제협력단(KOICA)이 수행하는 ODA 사업을 중심으로 큰 폭으로 늘어나고 있다. 우리나라의 물 분야 지원사업도 식수개발, 댐건설, 관개시설 개발, 수질오염처리, 재해방지 예 경보 시스템 및 홍수조절사업 등으로 다방면에 걸쳐 활발하게 진행되어 왔다. 그러나 우리나라의 물 분야 ODA 사업은 정책 및 제도에 대한 컨설팅이나 교육훈련 등 소프트웨어 기반의 원조개발협력은 상대적으로 미진하고 물리적 인프라 위주의 지원사업이 대부분을 차지하고 있다. 최근에는 전문가 파견 및 연수생 초청 등의 인적협력의 사례가 증가하고 있으나 아직까지는 사업내용의 대부분이 건물, 시설물 및 기자재 등의 구조적인 지원 형태로 이루어지고 있다. 이러한 형태는 일찍이 대개도국 물 분야 사업을 추진한 미국이나 일본 등의 선진국들이 원조협력사업의 일관성과 지속성을 평가하기 위하여 제도적이고 정책적인 지원을 확대하는 것과는 거리가 있다. 1992년 KOICA가 네팔 모디강 수력발전소 실시설계 지원으로 시작된 우리나라의 물 분야 사업도 이제 20년에 이르고 있다. 물 분야 지원사업도 새로운 방향전환이 필요한 시점이다. 본 연구에서는 우리나라의 물 분야 ODA 지원사업의 현황과 문제점을 파악하고 향후 나아가야 할 정책방향을 제시한다. 이를 위하여 먼저 아시아의 스리랑카와 아프리카의 에티오피아의 2개 국가를 사례지역으로 선정하고 물관리의 현황과 문제점을 파악한다. 그리고 사례지역에 대한 우리나라의 물 분야 ODA 지원사업의 현황과 당면과제를 분석한다. 마지막으로 선진국과 우리나라의 물분야 지원사업의 추진방향을 비교분석하여 우리나라 물 분야 ODA 지원사업이 지향할 방향성을 제시한다.

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Analysis of Characteristics using Geotechnical Investigation on the Slow-moving Landslides in the Pohang-si Area (포항지역 땅밀림지의 지반조사를 통한 땅밀림 특성 분석)

  • Lee, Moon-Se;Park, Jae-Hyeon;Park, Yunseong
    • Journal of Korean Society of Forest Science
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    • v.108 no.2
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    • pp.233-240
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    • 2019
  • The aim of this study was to provide basic data that could identify and help prevent a slow-moving landslide using an analysis of the relationship between below-ground characteristics and water from three slow-moving landslide areas in Pohang, Gyeongsangbuk-do, South Korea. Surface surveys, resistivity, seismic exploration, well logging, and boring surveys were conducted in the three areas. The main direction of discontinuous surface was matched with the slope direction of the three landslides. The results indicatedthat slow-moving landslides might occur in the direction of the slope. Underground water was distributed within the crush zones within the three landslide areas and flowed along the tensile cracks. There was a significant difference (p<0.01) between the mean angle of the tensile cracks and that of the underground waterflow (p=0.8019). These results indicated that the progress of a slow-moving landslide can be forecast by monitoring the location and flow of underground water within a known slow-moving landslide area.

An analytical modeling for the two-dimensional field effect of a short channel GaAs MESFET and SOI-structured Si JFET (단채널 GaAs MESFET 및 SOI 구조의 Si JFET의 2차원 전계효과에 대한 해석적 모델에 대한 연구)

  • Choi Jin-Wook;Ji Soon-Koo;Choi Soo-Hong;Suh Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.1
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    • pp.25-32
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    • 2005
  • In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.