• Current Photovoltaic Research
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• 제7권3호
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• pp.76-84
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• 2019

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

• Current Photovoltaic Research
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• 제11권2호
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• 대한지리학회지
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• 제29권1호
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• pp.65-83
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• 1994

현행 행정구역체계의 기본골격은 조선시대와 일제초기에 만들어질 것으로 그간의 급속한 산업화와 도시화 및 교통, 통신의 발달에 제대로 상응하지 못하고 있다는 점에서 개 편의 필요성이 제기된다. 본 연구의 목적은 이러한 현행 행정구역체계의 가장 큰 문제점을 전체적으로 검토하고 그것의 합리적인 개편의 기본원칙과 방향을 모색하는 데 있다. 현행 행정구역체계의 가장 큰 문제점은 주민에 의해 자생적으로 형성된 실질적 공간체계와 관련 되어 있다는 것이다. 이러한 실질적 공간체계에 부합하기 위해서는 국토공간계획의 차원에 서 지역적 형평과 균형의 원리와 함께 중심도시와 배후지의 통합, 생활권의 계층체계와 행 정계층의 일치, 생활권의 범위와 행정구역의 일치 등을 원칙으로 한 행정구역개편이 이루어 져야 할 것이다.